Tower Semiconductor and pSemi Win the Prestigious Industry Paper Competition Award at IMS 2025

Award-winning paper showcases breakthroughs in wideband RF switch performance, reinforcing Tower’s leadership in advanced RF front-end innovation

MIGDAL HAEMEK, Israel — July 08, 2025 — Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced receipt of the Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS) for their co-authored paper with pSemi — “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers”. The paper was presented on June 19, 2025, during IMS’s session on Innovative RF Switches, Varactor and Modulator Technologies, and won the Best Paper Award in its category.  

The award recognizes Tower’s PCM RF switch as a significant innovation and advancement in RF switch technology, capable of delivering a record-breaking combination of bandwidth (DC–110 GHz), insertion loss (