Infineon Technologies Ag · XETR:IFX
Infineon Technologies — Technical Presentation (August 2019)
22 slides from Infineon Technologies's technical presentation, August 2019
Slide 1: 1200 V G5 CoolSiC™ Schottky Diode
1200 V G5 CoolSiC™ Schottky Diode New level of system efficiency and reliability New New TO-247-2 TO-263-2 (D2PAK-2) Aug. 2019
Slide 2: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 2
Slide 3: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 3
Slide 4: SiC diode benefit - less leads to more
SiC diode benefit - less leads to more Ultrafast Si: large Qrr SiC: low Qc Features Technical benefits Customer benefits › No reverse recovery charge › Erec close to zero › 20-30% higher output power in same form factor › No forward recovery › 40-50% reduction in IGBT turn-on loss › Reduced EMI › Pu
Slide 5: Reduced IGBT turn-on losses thanks to SiC's low recovery losses
Great system impact thanks to the also reduced IGBT turn-on losses by SiC´s low recovery losses IL i Vo D1 D1 L1 IL Vi IRRM t S1=off IL IRRM i,v IC = IL + IRRM D1 Vo S1 L1 IL IRRM VCE IRRM Vi Eon IL S1=on t t0 t1 t2 Up to 40-50% reduction in IGBT turn-on loss – Decreased IRRM means decreased S1 (IGB
Slide 6: No more pain with dynamic losses
No more pain with dynamic losses Example: 1200 V Si IGBT + SiC diode in a boost stage topology (fsw=20 kHz); used in e.g. EV DC charging/UPS… 98,2 100 Case Temperature [oC] 98,0 90 97,8 +0.8% efficiency enables 80 higher output power! 15°C cooler [%] 97,6 70 97,4 SiC diode temp. 60 97,2 ultrafast Si
Slide 7: Switching losses, Psw, in SiC and Si diodes
Switching losses, Psw, in SiC and Si diodes SiC diode Si diode Psw = 0.5 * Vo * f * QC Psw = 0.5 * Vo * f * IRRM * tB SiC switching loss is very low compared to Si: Si shows 7-20 x higher Psw than SiC due to IRRM IRRM and tB values depends on diode forward current, dif/dt and diode junction temp
Slide 8: Specific product information
Specific product information 1200 V CoolSiCTM Schottky diode generation 5: › Low VF with low temperature dependency give low static losses over entire load range › Zero reverse recovery charge › 10 A CoolSiC™ diode matches VF of 30 A rated Si ultrafast diode thanks to its superior efficiency › Up to
Slide 9: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 9
Slide 10: The enabler: diode
The enabler: 1200 V G5 CoolSiC™ Schottky diode System improvements? › Reach new efficiency targets › Higher power density › Upgrade designs towards higher output power …while maintaining reliable system! Easily enabled by CoolSiCTM Schottky diodes 2019-07-31 Copyright © Infineon Technologies AG 2019
Slide 11: Our components are a perfect match with customer system needs: EV DC charging
Our components are a perfect match with customer system needs Vienna rectifier Full-bridge LLC › CoolSiC™ MOSFET › CoolSiC™ Schottky SiC MOSFET SiC Schottky diode 1200 V diode 1200 V G5 › CoolSiC™ Schottky SiC Schottky diode High voltage MOSFET › CoolMOS™ 650 V diode 1200 V G5 › TRENCHSTOP™ 5 650 IG
Slide 12: Our components are a perfect match with customer system needs: solar string inverters
Our components are a perfect match with customer system needs MPPT 3-Level T-type inverter › CoolSiC™ Schottky › CoolSiC™ MOSFET SiC Schottky diode SiC MOSFET diode 1200 V G5 1200 V › CoolSiC™ MOSFET › TRENCHSTOP™ IGBT6 SiC MOSFET 1200 V 1200 V IGBT › TRENCHSTOP™ 5 650 › TRENCHSTOP™ IGBT6 V IGBT 120
Slide 13: Our components are a perfect match with customer system needs: UPS
Our components are a perfect match with customer system needs Vienna rectifier 2-Level 3phase inverter › CoolSiC™ Schottky › TRENCHSTOP™ IGBT6 SiC Schottky diode IGBT diode 1200 V G5 1200 V › CoolSiC™ Schottky High voltage MOSFET › CoolMOS™ 650 V SiC Schottky diode diode 1200 V G5 › TRENCHSTOP™ 5 IG
Slide 14: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 14
Slide 15: 1200 V CoolSiC™ G5 Schottky Diode
1200 V CoolSiC™ G5 Schottky Diode New New Continuous TO-252-2 TO-263-2 TO-220-2 Forward Current, TO-247-3 TO-247-2 (DPAK real 2-leg) (D²PAK real 2-leg) (real 2-leg) IF [A] 2 IDM02G120C5 IDK02G120C5 IDH02G120C5 5 IDM05G120C5 IDK05G120C5 IDH05G120C5 8 IDM08G120C5 IDK08G120C5 IDH08G120C5 10 IDM10G120C5
Slide 16: Nomenclature
Nomenclature I D WD X G 120 C5 (B) Company G = Low thermal Package type I = Infineon resistance H = TO220 R2L M = DPAK R2L W = TO247 Device WD = TO247 R2L Breakdown voltage D = Diode K = D2PAK R2L [V] /10 Series name Continuous forward current 5 = Generation 5 [A] B = Common-cathode configuration 20
Slide 17: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 17
Slide 18: Infineon has more than 15 years of field experience in SiC
Infineon has more than 15 years of field experience in SiC 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 18
Slide 19: Support
Support Collaterals and brochures Technical material › Product briefs › Application notes › Selection guides › Technical articles › Application brochures › Simulation models › Presentations › Datasheets › Press releases, Ads Videos Support & tools › Technical videos › PCB design data › Product infor
Slide 20: Agenda
Agenda 1 Benefits of CoolSiC™ diode 2 Target applications 3 1200 V G5 CoolSiC™ Schottky Diode portfolio 4 Additional information and support channels 5 Summary 2019-07-31 Copyright © Infineon Technologies AG 2019. All rights reserved. 20
Slide 21: Summary – Key take aways
Summary – Key take aways › By using SiC diodes, designers for solar inverters, UPS, motor drives and other industrial applications can design in a new level of system efficiency, higher power density and reliability compared with Si based solution. 1200 V CoolSiC™ Schottky diode generation 5 support
Slide 22: Part of your life. Part of tomorrow.
Cinfineon Part of your life. Part of tomorrow.
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