Slide 1: GaN in a Silicon world: competition or coexistence?
GaN in a Silicon world: competition or coexistence? Tim McDonald GaN Technology Development Worldwide Applications and Marketing Infineon Technologies Eric Persson, Andrea Bricconi, Felix Grawert APEC 2016, Long Beach, CA
Slide 2: Abstract
Abstract Significant development resources have been expended and Gallium Nitride (GaN) based power conversion devices are now being introduced to the market on the heels of much hype. It remains to be seen how widely GaN power transistors will be adopted. Will GaN devices eventually replace all Sil
Slide 3: Outline
Outline 1 Historical Perspective for new power switch technology 2 GaN vs. Silicon Technology 3 First uses of GaN Crystal gazing: where will silicon thrive and where will GaN 4 be adopted over time? 5 Concluding comments 14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 3
Slide 4: Today's switch technology use by power and frequency
Today‘s switch technology use by 1a power and frequency Application Future scenario power electronics Power by application (W) › HVDC 1G ULTRA HIGH POWER › HC-supplier › Large drives 100M HIGH POWER › Ships 10M › Locomotives Thyristor Starting with Bipolar Junction › Large solar plants 1M IGBT Trans
Slide 5: Historical perspective: conversion from power bipolar transistor to power MOSFET
1b Historical perspective: “conversion” from power bipolar transistor to power MOSFET Power Transistor Market Size ($M) Technology 1984 (HTE, 2015(IHS) 1991) Bipolar Junction Transistor $957 $881 MOSFET $115 $6,034 Superjunction MOSFET $0 $895 IGBT $0 $4,946 Total (Less SJ MOSFET) $1,072 $11,861 › A
Slide 6: Technology comparison: GaN vs Silicon
2a Technology comparison: GaN vs Silicon* Parameter E-mode Equivalent Comments GaN Super junction FET Vdss 600 V 600 V RDSon typ 25°C 52 mΩ 52 mΩ Near parity for Eoss 7 uJ 8 uJ hard switching performance Tk,RDS(on) (150°C/25°C) 1.8 2.37 RDS(on) Tempco GaN >10x lower than Qg (10 V Vgs, 400 V Vds) 6 n
Slide 7: Superjunction vs GaN: why no large difference in hard switching losses
2b Superjunction vs GaN: why no large difference is seen in hard switching losses Blue = superjunction Red = e-mode HEMT Both ~70 mΩ max RDS(on) › Superjunction capacitances are much › Output charge difference is very large (up higher when compared to GaN to 10x at 100 V) between superjunction and G
Slide 8: Nonlinear Qoss charge affects deadtime
2c Nonlinear Qoss charge affects deadtime 500 450 400 -SJ FET has 3.3X longer charge-up time 350 300 Volts 250 200 150 Qoss Measurement Circuit 100 50 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Time (µs) 14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 8
Slide 9: Non linearity of Coss results in longer minimum dead time for SJ FET
2d Non linearity of Coss results in longer minimum dead time for SJ FET in ZVS CoolMOS™ P6 Cascode GaN 110 nSec Vds_ls 20 nSec Tdelay Vgs_ls 50V Id_ls SJ FET High capacitance at low voltage results in 5-6x longer delay time (110 nsec vs 20 nsec)and therefore longer required deadtime which increases
Slide 10: Superjunction devices continue to improve
2e Superjunction devices continue to improve Reference: G. DeBoy, PCIM 2015 Yet the more the improvement in hard switching figure of merit the longer the delay times (limits performance in ZVS applications at higher frequency) 14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved
Slide 11: Significant efficiency gains in superjunction C7 600 V
2f Significant efficiency gains in superjunction – C7 600 V with ≥0,5% improvement across load PFC efficiency difference for 90 Vac (PFC CCM, 1150 W @ 65 kHz) Efficiency Low Line 97 Superjunction FET performance continues to improve in hard 96 switching PFC applications eta [%] ≥ 0,5% efficiency 95
Slide 12: Benefits of C7 CoolMOS enables operation at higher switching frequencies
2g Benefits of C7 CoolMOSTM enables operation at higher (hard) switching frequencies Total simulated MOSFET losses [W] IPW60R045CP vs IPZ60R060C7, highline 2.5 kW Gate charge Turn off Turn on Conduction > Smaller MOSFET losses for C7 @ CP 130 kHz than CP 18,3 @ 65 kHz 0,4 > Increasing relative 12,4
Slide 13: Technology comparison summary
2h Technology comparison summary › Superjunction Coss and Crss behave very nonlinearly with voltage and frequency › Comparable RDS(on) GaN devices have much lower capacitance than their SJ FET counterparts when measured at low voltage; this difference greatly diminishes at higher voltages; there is
Slide 14: First uses for GaN
3a First uses for GaN › Initial Applications for GaN Devices: › Leverage Qrr: Class D Audio Amplification for lowest distortion › Leverage Qrr and switching: high efficiency AC:DC power conversion for operational cost sensitive applications such as datacenters › Leverage Co(tr): high density power c
Slide 15: First use of GaN: 100 V cascode device for class D audio amplifier
First use of GaN: 100 V cascode 3b device for class D audio amplifier Leverages extremely Key values GaN benefit vs Silicon low Qrr Lower - THD improves from Audio Quality faster/cleaner switching characteristics Efficiency Higher - from lower resistance More Smaller – Full SMD w/o heatsink, high ch
Slide 16: First Uses of GaN: GaN value proposition for data centers
3c First Uses of GaN: GaN value proposition for data centers Effect of higher efficiency on electricity costs Efficiency Savings per › Total Cost of Ownership (TCO) Stage increase server per year matters: hardware/software + PFC 0.5% 4.5$ operational costs really matters DCDC › Electricity costs is
Slide 17: High Power SMPS in datacenters: Evolution of PFC topologies
3d High Power SMPS in datacenters: Evolution of high efficiency topologies for PFC Classic Dual Boost HB TotemPole TODAY´S BEST › Higher efficiency (>98%) › Highest efficiency (>98%) › Simpler › Reduced part cont TCM PFC FB TotemPole TOMORROW › Higher efficiency (99%) TODAY/ › 2-phases (high part co
Slide 18: GaN enables >99% PFC efficiency
3e GaN enables >99% PFC efficiency >99% efficiency from 18-70% load 45kHz 65kHz Leverages: extremely low Qrr › Measurements: Infineon 2015 › Complete Power Stage. 2.5 kW, Vin=230 V, Tamb=25° C › Full SMD solution 14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 18
Slide 19: 600 V CoolGaN for density: 3 kW LLC
1. 600 V CoolGaN™ for density: 3 kW LLC PD~140 W/in3 SJ based 130 kHz design GaN based 350 kHz design W=91 mm H=42 mm H=32 mm 140W/in3 L=152 mm L=220 mm 50W/in3 W=140 mm KEY MESSAGES › LLC w/ CoolMOS™ (380 V-54.3 V): >98% peak efficiency at 50 W/in3 density (res freq: 130 kHz) › LLC w/ CoolGaN™ (380
Slide 20: CoolGaN enables dramatic increase in power conversion density using ZVS in LLC
3g CoolGaN™ enables dramatic increase in power conversion density using ZVS in LLC Practical Frequency limit of Superjunction FET’s in LLC Tomorrow? 450 Today’s Today’s GaN Superjunction HEMT FET based FET based designs 9-10x 350 improvement designs over SJ FET Density (W/in3) (Work of CPES, 250 Vir
Slide 21: In which power and frequency domain might GaN be used?
4 In which power and frequency domain might GaN be used? Application Future Scenario Power Electronics Power by application (W) › HVDC 1G ULTRA HIGH POWER › HC-supplier › Large drives 100M HIGH POWER › Ships 10M › Locomotives Thyristor › Large solar plants 1M IGBT › Trams, buses › Electric cars 100k
Slide 22: Concluding comments
5 Concluding comments › The historical record shows new switch technologies are adopted and grow new market segments where they push the performance window › KEY GaN device FOM‘s are demonstrated with 10-100x improvement over silicon (Coss TR, Qrr) › It is clear this can be leveraged for higher dens
Slide 23: Part of your life. Part of tomorrow.
Part of your life. Part of tomorrow. infineon