Infineon Technologies Ag · XETR:IFX
Infineon Technologies — Technical Presentation (May 2016)
25 slides from Infineon Technologies's technical presentation, May 2016
Slide 1: 1200 V CoolSiC Schottky Diode Generation 5
1200 V CoolSiC™ Schottky Diode Generation 5: New level of system efficiency and reliability May 2016
Slide 2: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 2
Slide 3: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 3
Slide 4: Application areas
Application areas Silicon based solution Design in a new level of efficiency & reliability? Enabled by SiC Schottky diodes April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 4
Slide 5: Application examples
Application examples String inverter 3-phase, 1 kW – 30 kW: UPS: Vienna Rectifier Boost stage SiC Diode: 1200 V G5 TO-220/TO-247 SiC Diode: 1200 V G5 TO-220 / TO-247 IGBT: HighSpeed 3 1200V TO-247 IGBT: TRENCHSTOP™ 5 650 V TO-247 IGBT Driver: 1ED020I12-F2, 2ED020I12-F2 µController: XMC4000 April 201
Slide 6: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 6
Slide 7: No more pain with dynamic losses
No more pain with dynamic losses Example: 1200 V Si IGBT + SiC diode in a boost stage topology Vin= 400 V, Vout= 800 V, fsw=20 kHz SiC diode compared to Si diode, has ... ... higher system efficiency, ... lower device thermals, for ... increased power density and reliability! April 2016 Copyright ©
Slide 8: SiC diode benefit – Less leads to more
SiC diode benefit – Less leads to more Ultrafast Si: large Qrr SiC: low Qc Features Technical benefits Customer benefits › No reverse recovery charge › Erec close to zero › 20-30% higher output power in same form › No forward recovery › 40-50% reduction in IGBT factor turn-on loss › Purely capacitiv
Slide 9: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 9
Slide 10: SiC Gen 5 static losses and reverse recovery
Major improvement in static losses while maintaining virtually zero reverse recovery charge 1200 V CoolSiCTM Schottky Diode Generation 5 1. Reduction of VF and its temperature dependency for low static losses over entire load range Forward voltage, VF, of SiC and Reverse recovery charge, Qc/Qrr, ult
Slide 11: Generation 5 is the performance-leading SiC diode
Generation 5 is the performance-leading SiC diode 1200 V CoolSiCTM Schottky Diode Generation 5 2. Thermal performance improvement 3. Extended surge current capability for improved reliability VF at rated current SiC diodes in TO-247 Surge current SiC diodes in TO-247 2,5 16 Tj= 25 °C 14x 2,25 14 Tj=
Slide 12: Consistent innovation made the way for Generation 5
Consistent innovation made the way for Generation 5 Merged Pn Schottly (MPS) design Thin wafer technology Gen2 Gen 5 Improved performance and chip shrink Diffusion bonding Gen 2 Gen 5 165.5 °C 136.4 °C April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 12
Slide 13: Consistent innovation made the way for Generation 5
Consistent innovation made the way for Generation 5 Merged Pn Schottly (MPS) design › 40% lower resistive losses than Generation2 having pure Schottky design reduced VF and higher current density low temperature dependency on VF › High surge current capability Thin wafer technology › Smaller dif
Slide 14: The result: lowest losses and lowest case temperatures
The result: lowest losses and lowest case temperatures Example: 1200 V HighSpeed3 Si IGBT with SiC diodes vs. Si diode in a boost stage topology, Vin= 400 V, Vout= 800 V, fsw=20 kHz Boost Diode-Thermals Case Temperature [oC] SiC diode, G5 SiC diode, Vendor A SiC diode, Vendor B ultrafast Si diode Ou
Slide 15: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 15
Slide 16: 1200 V CoolSiC Schottky Diode Generation 5 portfolio
1200 V CoolSiCTM Schottky Diode Generation 5: up to 40 A in TO-247, 20 A in TO-220 and 10 A in DPAK TO-252-2 IF TO-220-2 TO-247-3 (DPAK) 2A IDM02G120C5 IDH02G120C5 5A IDM05G120C5 IDH05G120C5 8A IDM08G120C5 IDH08G120C5 10 A IDM10G120C5 IDH10G120C5 IDW10G120C5B* 15-16 A IDH16G120C5 IDW15G120C5B* 20 A
Slide 17: Focus applications across portfolio
Focus applications across portfolio TO-252-2 IF TO-220-2 TO-247-3 (DPAK) 2A Micro Inverter1 5A Micro Inverter1 SMPS, UPS 8A SMPS 10 A 15-16 A UPS 20 A String Inverter and UPS 30 A 40 A 1Rectification in secondary side April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 17
Slide 18: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 18
Slide 19: Great system impact thanks to zero diode turn-off loss
Great system impact thanks to zero diode turn-off loss and reduced IGBT turn-on IL i Vo D1 D1 L1 IL Vi IRRM t S1=of f IL IRRM i,v IC = IL + IRRM D1 Vo S1 L1 IL IRRM VCE IRRM Vi Eon IL S1=o n t t0 t1 t2 Up to 40-50% reduction in IGBT turn-on loss › Decreased IRRM means decreased S1 (IGBT) turn-on los
Slide 20: Switching Losses, Psw, in SiC and Si diodes
Switching Losses, Psw, in SiC and Si diodes SiC Diode Si Diode Psw = 0.17 * Vo * f * QC Psw = 0.17 * Vo * f * IRRM * tB SiC switching loss is very low compared to Si: › Si shows higher Psw than SiC due to IRRM › IRRM and tB values depends on diode forward current, dif/dt and diode junction temperatu
Slide 21: 30 A Si diode can be exchanged for a 10 A CoolSiC
30 A rated Si diode can be exchanged to even a 10 A CoolSiCTM Generation 5 SiC diode! 30 A Si dissipates more power than a 10 A SiC › 18 A Si have 8.8 W additional power dissipation compared to 10 A SiC @ 2 A IF › 18 A Si have 9.4°C higher junction temp. compared to 10 A SiC @ 2 A IF April 2016 Copy
Slide 22: Table of contents
Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio – what is offered now? 5 Design-in guidelines SiC vs. Si diodes 6 Summary April 2016 Copyright © Infineon Technologies AG 2016. All rights reserved. 22
Slide 23: Summary
Summary › By using SiC diodes, designers for solar inverters, UPS, motor drives and other industrial applications can design in a new level of system efficiency, higher power density and reliability compared with Si based solution › 1200 V CoolSiC™ Schottky diode generation 5 supports this by low-lo
Slide 24: Support materials
Support materials Collaterals and › Selection Guides brochures › Product Briefs › Application Brochures › Presentations › Press Releases, Ads Technical material › Application Notes › Technical Articles www.infineon.com/sic › Simulation Models › Datasheets Support and tools › PCB Design Data › Simula
Slide 25: Part of your life. Part of tomorrow.
Part of your life. Part of tomorrow. infineon
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