Infineon Technologies Ag · XETR:IFX

Infineon Technologies — Technical Presentation (July 2024)

17 slides from Infineon Technologies's technical presentation, July 2024

  1. Slide 1: Reference Design for 22kW industrial high voltage inverter

    Reference Design for 22kW industrial high voltage inverter REF-22k-GPD-INV-EASY3B July 2024 restricted 1

  2. Slide 2: The GPD board enables you testing the latest Infineon products under your operation conditions

    The GPD board enables you testing the latest Infineon products under your operation conditions REF-22K-GPD-INV-EASY3B Overview › The design offers a complete reference solution to evaluate the Infineon chip-set offering under real operating conditions › It consist of a power board including an Easy3

  3. Slide 3: Powerboard components placement

    Powerboard components placement IMBF170R1K0M1 TLI4971-A120T5 1.7kV CoolSiC™ Current Sensor MOSFET 1ED3240MC12H Gate Driver FP100R12W3T7_B11 IGBT Module 1 Jul 2024 restricted Copyright © Infineon Technologies AG 2024. All rights reserved. 3

  4. Slide 4: Block diagram

    Block diagram 1 Jul 2024 restricted Copyright © Infineon Technologies AG 2024. All rights reserved. 4

  5. Slide 5: Combining Infineon's newest technologies of IGBT7, gate driver, current sensor and control in one system

    Combining Infineon's newest technologies of IGBT7, gate driver, current sensor and control in one system Infineon products Features IMBF170R1K0M1 CoolSiC™ MOSFET enables direct 1.7kV CoolSiCTM MOSFET drive by most fly-back controllers XMC4300-F100K256 Communication microcontroller for Microcontrolle

  6. Slide 6: The Easy3B with IGBT7 package enables compact design with high current and power density

    The Easy3B with IGBT7 package enables compact design with high current and power density Key features Trenchstop™ allows to increase power density IMBF170R1K0M1 ‒ Enhanced controllability of dV/dt optimized for drive applications 1.7kV CoolSiC™ MOSFET ‒ Overload operation up to 175 °C ‒ Low VCE,sat

  7. Slide 7: The Easy3B with IGBT7 package enables compact design with high current and power density

    The Easy3B with IGBT7 package enables compact design with high current and power density Key features Features of the Easy3B package IMBF170R1K0M1 ‒ PressFIT pins for automated and reliable mounting process 1.7kV CoolSiC™ MOSFET ‒ Two Easy 2B size DCB into one single package ‒ Bonding wire between D

  8. Slide 8: XENSIV TLI4971-A120T5 A Coreless Differential Current Sensor Based on Hall Technology

    Infineon's XENSIV™ TLI4971-A120T5 A Coreless Differential Current Sensor Based on Hall Technology Key features Simplified layout, reduced design risk IMBF170R1K0M1 Stray field robustness Integrated EEPROM to Overcurrent Outputs through differential customize device with super fast 1.7kV CoolSiC™ MOS

  9. Slide 9: XENSIV TLI4971-A120T5 Low Current Rail Resistance Enables Measurement of High Currents

    Infineon's XENSIV™ TLI4971-A120T5 Low Current Rail Resistance Enables Measurement of High Currents Key features Facts & Figures IMBF170R1K0M1 Ultra-low power loss ‒ Current rail resistance specified at due to low resistance 220 µΩ typical 1.7kV CoolSiC™ MOSFET of current rail ‒ Measurement up to 70

  10. Slide 10: EiceDRIVER 2L-SRC Compact – System efficiency with two-level slew-rate control

    Infineon's EiceDRIVER™ 2L-SRC Compact – System efficiency with two-level slew-rate control Key features EiceDRIVER™ 1ED3240MC12H IMBF170R1K0M1 1.7kV CoolSiC™ MOSFET 1ED3240MC12H ‒ Single channel isolated gate driver with 10 A driving capability EiceDRIVERTM Gate Driver ‒ Two-level slew rate control

  11. Slide 11: EiceDRIVER 2L-SRC Compact – Optimizing both switching losses and EMI

    Infineon's EiceDRIVER™ 2L-SRC Compact – Optimizing both switching losses and EMI Key features EiceDRIVER™ 1ED3240MC12H IMBF170R1K0M1 ‒ Two-level slew rate control 1.7kV CoolSiC™ MOSFET ‒ Separate outputs for fast & slow turn-on ‒ Reduction of switching losses 1ED3240MC12H ‒ Optimization of electroma

  12. Slide 12: 1700 V CoolSiC MOSFET is optimized for fly-back topologies in auxiliary power supplies

    Infineon's 1700 V CoolSiC™ MOSFET is optimized for fly-back topologies to be used in auxiliary power supplies Key features Why 1.7kV CoolSiC™ MOSFET? IMBF170R1K0M1 1.7kV CoolSiC™ MOSFET + Rdiv1 1ED3240MC12H Case #1 Cdiv1 VDC up to 1600V + Case #2 VDC up to 800V Rdiv2 Cdiv2 EiceDRIVER TM Gate Driver

  13. Slide 13: 1700 V CoolSiC MOSFET in TO-263-7 package with extended creepage and clearance distances

    Infineon‘s 1700 V CoolSiC™ MOSFET in TO-263-7 package with extended creepage and clearance distances reduces isolation effort Key features Optimized gate voltage for direct drive from MC IMBF170R1K0M1 ‒ Infineon's 1700 V CoolSiC™ MOSFET, is the only SiC MOSFET that could be directly driven by most o

  14. Slide 14: EiceDRIVER slew rate control gate driver solution optimizes EMI and power losses

    Infineon's EiceDRIVER™ slew rate control gate driver solution optimizes EMI and power losses Key features Key benefits IMBF170R1K0M1 1.7kV CoolSiC™ MOSFET ‒ Design-in support, through layout example 1ED3240MC12H ‒ Smaller size, through Easy3B package and EiceDRIVERTM Gate Driver small current sensor

  15. Slide 15: Key featured products of the reference design REF-22K-GPD-INV-EASY3B

    Key featured products of the reference design REF-22K-GPD-INV-EASY3B Sales Code Product Type Link to product page https://www.infineon.com/cms/de/product/power/igbt/igbt-modules FP100R12W3T7_B11 IGBT Module /fp100r12w3t7_b11/ TLI4971-A120T5 XENSIV™ Current Sensor https://www.infineon.com/cms/en/prod

  16. Slide 16: Disclaimer

    Disclaimer Product images are for illustrative purposes only and may differ from the actual products. Published by Infineon Technologies AG, Am Campeon 1-15, 85579 Neubiberg, Germany © Infineon Technologies AG 2021. All Rights Reserved. Disclaimer: Environmental conditions have been considered in th

  17. Slide 17: Cinfineon

    Cinfineon

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