Press release
Micron Delivers Industry’s Fastest, Highest-Capacity HBM to Advance Generative AI Innovation
First in industry to launch 8-high 24GB HBM3 Gen2 with bandwidth over 1.2TB/s and superior power efficiency enabled by advanced 1β process node BOISE, Idaho,
About this update from Micron Technology, Inc.
[{"type":"text","content":"First in industry to launch 8-high 24GB HBM3 Gen2 with bandwidth over 1.2TB/s and superior power efficiency enabled by advanced 1β process node\nBOISE, Idaho, July 26, 2023 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU) today announced it has begun sampling the industry’s first 8-high 24GB HBM3 Gen2 memory with bandwidth greater than 1.2TB/s and pin speed over 9.2Gb/s, which is up to a 50% improvement over currently shipping HBM3 solutions. With a 2.5 times performance per watt improvement over previous generations, Micron’s HBM3 Gen2 offering sets new records for the critical artificial intelligence (AI) data center metrics of performance, capacity and power efficiency. These Micron improvements reduce training times of large language models like GPT-4 and beyond, deliver efficient infrastructure use for AI inference and provide superior total cost of ownership (TCO). The foundation of Micron’s high-bandwidth memory (HBM) solution is Micron’s industry-leading 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. Moreover, Micron’s 12-high stack with 36GB capacity will begin sampling in the first quarter of calendar 2024. Micron provides 50% more capacity for a given stack height compared to existing competitive solutions. Micron’s HBM3 Gen2 performance-to-power ratio and pin speed improvements are critical for managing the extreme power demands of today’s AI data centers. The improved power efficiency is possible because of Micron advancements such as doubling of the through-silicon vias (TSVs) over competitive HBM3 offerings, thermal impedance reduction through a five-time increase in metal density, and an energy-efficient data path design. Micron, a proven leader in memory for 2.5D/3D-stacking and advanced packaging technologies, is proud to be a partner in TSMC’s 3DFabric Alliance and to help shape the future of semiconductor and system innovations. As part of the HBM3 Gen2 product development effort, the collaboration between Micron and TSMC lays the foundation for a smooth introduction and integration in compute systems for AI and HPC design applications. TSMC has received samples of Micron’s HBM3 Gen2 memory and is working closely with Micron for further evaluation and tests that will benefit customers’ innovation for the ne...