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5N+ Patents Uniquely Positioned to Expedite First-to-Market Commercialization of Vertical GaN-on-Si Power Devices
5N+ Patents Uniquely Positioned to Expedite First-to-Market Commercialization of Vertical GaN-on-...
About this update from 5n Plus Inc.
[{"type":"text","content":"\n \n \n \n 5N+ Patents Uniquely Positioned to Expedite First-to-Market Commercialization of Vertical GaN-on-Si Power Devices\n \n \n /* Style Definitions */\nspan.prnews_span\n{\nfont-size:8pt;\nfont-family:\"Arial\";\ncolor:black;\n}\na.prnews_a\n{\ncolor:blue;\n}\nli.prnews_li\n{\nfont-size:8pt;\nfont-family:\"Arial\";\ncolor:black;\n}\np.prnews_p\n{\nfont-size:0.62em;\nfont-family:\"Arial\";\ncolor:black;\nmargin:0in;\n}\n.prntac{\nTEXT-ALIGN: CENTER\n}\n \n \n \n \n \n \n Canada NewsWire\n \n \n \n \n \n \n Recently validated 5N+ patent portfolio key to development of novel vertical GaN-on-Si power devices for 600V-1200V High-Power Electronics, EV and AI server applications\n \n \n \n \n \n MONTRÉAL\n \n ,\n \n \n March 21, 2024\n \n \n /CNW/ - 5N Plus Inc. (TSX: VNP) (\"5N+\" or \"the Company\"), a leading global producer of specialty semiconductors and performance materials, today announced that it is officially launching the commercialization rights for its portfolio of gallium nitride on silicon (GaN-on-Si) patents that will take semiconductors and power switching technology to the next level. These key patents can enable the rapid prototype development and first-to-market commercialization of novel vertical GaN-on-Si power devices by companies operating in the High-Power Electronics (HPE), Electric Vehicles (EV) and Artificial Intelligence (AI) server sectors.\n \n \n \n \n \n \n \n \n \n \n Key Patents Enabling First-to-Market Vertical GaN-on-Si Devices\n \n \n A mechanically stable, wide-bandgap semiconductor material with high heat capacity and thermal conductivity, GaN has outstanding properties. Today, lateral GaN is primarily used in low voltage (<400V) applications, such as chargers, but novel vertical GaN-on-Si has the potential to replace silicon carbide (SiC), which is the current preferred material for medium and high voltage applications (i.e. EV inverters operating 650V). SiC is expensive and not easily available, whereas GaN-on-Si is more efficient and cost-effective. Recent\n \n academic demonstrations\n \n utilizing key 5N+ patents have shown that vertical GaN-on-Si, as opposed to lateral GaN transistors showing destructive breakdown, offers soft breakdown with avalanche capability for safe, compact and more efficient devices.\n \n \n \"Our 54 patents...