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Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026

Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026 Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a

Navitas Semiconductor CorporationMay 18, 20266
Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026

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Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026 TORRANCE, Calif., May 18, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will showcase its latest GaN and SiC products for AI data center, energy and grid infrastructure, and industrial electrification at PCIM 2026 . Product highlights include the latest in Navitas GaNFast FETs starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V, along with expanded offerings across the GaNSafe TM , GaNSlim TM , and Bi-directional GaN IC product families. Navitas will showcase 3300 V, 2300 V, and 1200 V Trench Assisted Planar (TAP) SiC devices using advanced reliability SiCPAK TM press-fit modules, alongside recently announced 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP. For the AI data center, Navitas will exhibit two solutions that enable a swifter transition to the 800 V DC standard using GaN: For grid and energy infrastructure, Navitas will showcase two SST topologies enabled by Navitas GeneSiC UHV and HV technology: Navitas will also showcase industrial electrification and motor control inverter solutions based on GaNSense™ Motor Drive ICs, integrating lossless current sensing, voltage sensing, and temperature protection for improved performance and robustness. In addition, GaNSlim power ICs will showcase simplified development of high-efficiency, high-power-density solutions with industry-leading integration for performance computing applications. Navitas will also be presenting in the following panel discussions: Tuesday, June 9th | 1:25 -2:25 PM CET  Componeers Panel Session: Automotive, AI, Humanoid Robots – the future of GaN Technology Stage, Hall 4, PCIM Expo & Conference Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit Wednesday, June 10 | 11:45 am – 12:45 pm CET Power Electronics News Panel Session: The Evolution in Data Center Power Distribution Technology Stage, Hall 4, PCIM Expo & Conference Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit Wednesday, June 10th | 2:30 – 3:30 PM CET Bodo’s Panel Session: “Riding the SiC Wave Efficiently” Technology Stage, Hall 4, PCIM Expo & Conference Presenter: Paul Wheeler, VP & GM, High Voltage SiC Business Unit Thursday, June 11th | 11:45 AM – 12:45 PM (CET) Bodo’s Panel Session: “What’s up, what’s next for GaN?” Technology Stage, Hall 4, PCIM Expo & Conference Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit Navitas booth is located in Hall 9, Booth #544 at NürnbergMesse from June 9–11. You can find more detailed information about what Navitas is showcasing at PCIM Europe 2026 at: https://navitassemi.com/event/PCIM-2026 . To set up meetings with a Navitas representative, write to [email protected] . About Navitas Navitas Semiconductor  (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies,  GaNFast™ power ICs  integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency.  GeneSiC™   high-voltage SiC devices leverage patented  trench-assisted planar technology  to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be  CarbonNeutral® -certified. Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners. Contact Information Navitas Semiconductor Vipin Bothra [email protected] Navitas Investor Contacts Leanne Sievers | Brett Perry Shelton Group [email protected] Cautionary Statement Regarding Forward-Looking Statements This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements. A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/43b40945-68ad-48a0-aed3-3d7682eabfd4

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Navitas SemiconductorIndustrial ElectrificationNavitasAI Data Centerpower deliverypower densityGrid InfrastructurePCIMGaNSiC

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