Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (November 2024)
26 slides from Asml Holding Nv's investor day presentation, Nov 18, 2024
Slide 1: Holistic Lithography Solutions and business opportunity
Public Marco Pieters ASML Investor Day Veldhoven, The Netherlands November 14, 2024 Executive Vice President and Head of Business Line Applications Small Talk 2024 Holistic Lithography Solutions and business opportunity Exhibit 99.6
Slide 2: Holistic Lithography Opportunity & Growth Drivers
Public Holistic Lithography Opportunity & Growth Drivers • Holistic Lithography focuses on improving Accuracy and Patterning Yield for our customers. • Accuracy: drive improvements in Overlay and Edge Placement Error (EPE) via Computational Lithography (physical models & AI), Metrology & Inspection
Slide 3: Holistic lithography enables customers to maximize Good Wafers per Day
Public • Patterning process control • Optical metrology • E-beam metrology • E-beam inspection • AI based models • Overlay • Local CDU • Edge Placement Error (EPE) Holistic lithography enables our customers to maximize Good Wafers per Day Our product portfolio focuses on Patterning Yield and Accurac
Slide 4: EPE: Edge Placement Error
EPE: Edge Placement Error Source: 1Luc van den Hove, IMEC , ITF May 21, 2024 0 5 10 15 30 20 25 21 18 16 14 28 4,3 3,5 3,5 Public data Customer projection 2020 2023 2025 2027 2029 2031 2033 2035 17 14 3,8 22 23 E P E [ n m ], N o d e , m e ta l p it c h , L in e a r s c a le Year of high-volume prod
Slide 5: Evolving Industry Roadmap drives growth opportunity for Applications Products
Public Evolving Industry Roadmap drives growth opportunity for Applications Products Patterning Yield Accuracy DRIVERS TRENDS Computational Lithography Litho & Etch Model accuracy, Compute cost Physical models → + Deep learning Rectangular → Freeform mask patterns CPU → Hybrid/GPU compute Scanner an
Slide 6: Evolving Industry Roadmap drives growth opportunity for Applications Products
Public Evolving Industry Roadmap drives growth opportunity for Applications Products Page 6 2023 2026 2030 Scanner and Process Control Software Computational Lithography Optical and E-beam Metrology High Resolution Inspection (optical & E-beam) 5.4 B€ 7.6 B€ 11 B€ Total Addressable Market EUV DUV Me
Slide 7: Lithography is a formidable tool to compensate process fingerprints
Public Lithography is a formidable tool to compensate process fingerprints Correction capability increased ~5 orders of magnitude Exposure stage 100% of wafers are measured 100% of wafers are processed field-by-field Metrology stage Even Fingers Odd Fingers Grey Filter X Y Z Optical Centerline Dose
Slide 8: Holistic approach improved overlay ~3 orders of magnitude
Public Holistic approach improved overlay ~3 orders of magnitude Correction capability increased ~5 orders of magnitude and overlay improved ~3 orders of magnitude Exposure stage 100% of wafers are measured 100% of wafers are processed field-by-field Metrology stage Even Fingers Odd Fingers Grey Fi
Slide 9: Holistic approach extending to EPE gives another opportunity to improve yield
Public # u s e r s e le c ta b le l it h o c o rr e c ti n o s p e r lo t Holistic approach improved overlay ~3 orders of magnitude and extending to EPE gives another opportunity to improve Yield 1975 1980 1985 1990 1995 2000 2005 2010 2015 2020 2025 1000 100 10 1 0.1 Overlay achieved lithography O
Slide 10: Computational litho: OPC accuracy improved with machine learning and massive metrology
Public DUV EUV insertion High-NA EUV insertion Page 10 2010 2012 2014 2020 2022 2024 2026 2028 2030 10000 1 2016 2018 100 10 1000 Metrology # Parameters in model # of metrology gauges Physical models + Metrology + AIPhysical Models Accuracy Cost Ai Computational Lithography Computational litho: opti
Slide 11: Optimizing Patterning Yield by combining metrology data and scanner actuations
Public Optimizing Patterning Yield by combining metrology data and translating this to scanner actuations Page 11 patterning (Layer N+1) overlay metrology e-beam metrology e-beam metrology patterning (Layer N) global CD Layer N Layer N and Layer N+1 overlay Layer N+1 global CD local CDU & placementl
Slide 12: Massive overlay metrology is needed to drive scanner corrections
Public Massive overlay metrology is needed to drive those scanner corrections YieldStar platform enables increase of sampling by 80% while cost effectiveness is improved by 30~45% every 4 years Page 12 100% 90% 80% 70% 60% 50% 40% 30% 20% 0% 14000 13000 12000 11000 10000 9000 8000 7000 6000 5000 400
Slide 13: YieldStar installed base reached >1000 systems in H1'24
Public YieldStar installed base reached >1000 systems in H1’24 Page 13 Optical and E-beam Metrology 2010 2015 2020 2024 1200 1000 800 600 400 200 0 N u m b e r o f s h ip m e n ts [ c u m u la ti v e ] ’23’22’21’19’18’17’16’14’13’12’11’09’08 November 14, 2024
Slide 14: Patterning Yield: e-beam opportunity for buried defects and voltage contrast
Public Patterning Yield: e-beam opportunity for physical, buried defects and voltage contrast Voltage contrast is driving the insertion of e-beam inspection in High Volume Manufacturing Page 14 160 1040 20 8 6 4 2 Defect size [nm] Buried and electric defects Extra high resolution physical inspection
Slide 15: Voltage contrast inspection adopted in NAND HVM, expanding to Logic and DRAM
Public Voltage contrast inspection adopted in NAND HVM, expanding to Logic and DRAM Unique capability of electron beam inspection to find yield limiting defects Page 15 100 % 0 % 0 5 10 15 20 25 3530 EPE [nm] E-beam Voltage Contrast measurements confirm that EPE is a proxy for yield M e a s u re d b
Slide 16: Multibeam eScan 1100: larger wafer coverage and better CoO
Public Multibeam eScan 1100, larger wafer coverage and better CoO, enabled by >10x throughput >10 eScan1100 systems at >5 customers for evaluation and qualification for Voltage Contrast in HVM • Demonstrated value in customer evaluations: larger wafer coverage capable of capturing wafer defect finge
Slide 17: Customer data shows eScan1100 capturing clear defect signature
Public Customer data shows eScan1100 capturing clear defect signature with higher throughput 7~8x larger wafer coverage and ~60% shorter cycle time * based on full wafer area size as 707cm² Page 17 Single Beam Inspection eScan1100 Wafer coverage: 0.2% Wafer coverage: 1.5%* Inspection time: 100% Insp
Slide 18: Multibeam enables higher throughput and larger wafer coverage
Public Multibeam enables higher throughput and larger wafer coverage in voltage contrast and physical inspection for inline defect monitoring in HVM Page 18 2019 2020 2021 2023 2024 2025 2026 2027 2028 2029 100 1000 10 1N o rm a li z e d t h ro u g h p u t (L o g ic a n d D R A M ) 100% wafer area p
Slide 19: Next step in multibeam: >2700 beams
Public Next step in multibeam: from 25 to >2700 beams Technology demonstration ongoing, working towards customer early access in 2025 Focal plane verification Through focus measurement >2700 beams on scintillator screen All of >2700 beams on scintillator screen are functional Detector functionality
Slide 20: Front end 3D integration to complement 2D shrink
Public We expect front end 3D integration to complement 2D shrink in driving density Front end 3D integration challenges will trigger new litho opportunities for all semiconductor products Page 20 Stack LOGIC W-W hybrid W-W Fusion W-W | D-W Fusion Overlay 3D NAND BSPN CFET HVM 2026 >2032 Array CMOS
Slide 21: Holistic Lithography will enable 3D integration
Public Holistic Lithography will enable 3D integration Metrology and scanner control at pre and post bonding critical process points needed for overlay Page 21 < 5 nm overlay error Both wafers have separate patterning and processes but overlay needs to be matched between them prior to bonding Pre-bo
Slide 22: Holistic Lithography will enable 3D integration
Public Holistic Lithography will enable 3D integration Metrology and scanner control at pre and post bonding critical process points needed for overlay Page 22 Actuators Holistically bringing the overlay after bonding back to customer requirements Post-bonding >2000 measurements/wafer < 5 nm overlay
Slide 23: Holistic Lithography will enable 3D integration
Public Holistic Lithography will enable 3D integration Metrology and scanner control at pre and post bonding critical process points needed for overlay Page 23 Pre-bonding CMOS Scanner correction and control ARRAY Scanner and offline metrology 2 1 Actuators Post-bondingBonding ARRAY CMOS massive met
Slide 24: Holistic Lithography Opportunity & Growth Drivers
Public Holistic Lithography Opportunity & Growth Drivers • Holistic Lithography focuses on improving Accuracy and Patterning Yield for our customers. • Accuracy: drive improvements in Overlay and Edge Placement Error (EPE) via Computational Lithography (physical models & AI), Metrology & Inspection
Slide 25: Forward Looking Statements
Public Forward Looking Statements This document and related discussions contain statements that are forward-looking within the meaning of the U.S. Private Securities Litigation Reform Act of 1995, including statements with respect to our strategy, plans and expected trends, including trends in end m
Slide 26: Thank You
Public THANK YOU