Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (September 2021)
27 slides from Asml Holding Nv's investor day presentation, Sep 30, 2021
Slide 1: EUV Products and Business Opportunity
EUV Products and Business Opportunity Christophe Fouquet Executive Vice President Business Line EUV
Slide 2: EUV products and business opportunity Key messages
EUV products and business opportunity Key messages Slide 2 29 Sept. 2021 ASML EUV lithography extends our Logic and DRAM customers roadmap by providing lithography resolution improvement, state of the art overlay performance and year on year cost reduction Our customers are using EUV in Logic node a
Slide 3: EUV 0.33 NA is in production for both Logic and DRAM, and its adoption is expected to continue to grow
EUV 0.33 NA is in production for both Logic and DRAM, and its adoption is expected to continue to grow EUV 0.33 NA extension and EUV 0.55 NA introduction is expected to extend EUV values to the next decade Our increased EUV product and service value is expected to continue to drive profitability
Slide 4: EUV 0.33 NA is in production, for both Logic and DRAM
EUV 0.33 NA is in production, for both Logic and DRAM All advanced semiconductor manufacturers expected to run EUV in Slide 4 29 Sept. 2021 production by 2024 Fastest, Largest-capacity Mobile Memory Based on today’s most advanced (1z) process node, Samsung’s new 16Gb LPDDR5 is the first memory to be
Slide 5: EUV 0.33 NA adoption enabled by platform maturity in high-volume manufacturing
EUV 0.33 NA adoption enabled by platform maturity in high-volume manufacturing Slide 5 29 Sept. 2021 100% 3000 System output 95% Max wafers per day (single system, weekly average) 2500 Installed base system availability 90% day 4 weeks moving average (end of period) 85% 2000 per 80% 75% 1500 Availab
Slide 6: EUV 0.33 NA adoption expected to continue for Logic and DRAM
EUV 0.33 NA adoption expected to continue for Logic and DRAM to support most advanced device roadmap Slide 6 29 Sept. 2021 30 Actuals Today Roadma 20 Logic exposures Memory of max min Number 10 0 2018 2019 2020 2021 2022 2023 20242025 Public
Slide 7: EUV increased adoption expected to result in >2x increase of EUV wafer moves
EUV increased adoption expected to result into >2x increase of EUV wafer moves per year 2025 compared to 2021 Slide 7 29 Sept. 2021 800% 30 Actuals Today Roadmap (ambition) year Memory per 20 Logic exposed exposures Memory of max wafers min 10 EUV Number Logic Total 100% 0 2018 2019 2020 2021 2022 2
Slide 8: ASML to address EUV demand by increasing shipments and system productivity
ASML to address EUV demand by increasing shipments and system productivity Slide 8 29 Sept. 2021 Actuals Today Roadmap 400% (ambition) [#] year wph*] 300% per[ put Through 200% ents/Capacity Shipm System |100% 2018 2019 2020 2021 2022 2023 2024 2025 NXE:3400B NXE:3400C NXE:3400C NXE:3600D NXE:3600D
Slide 9: ASML to address EUV demand by increasing shipments and system productivity
ASML to address EUV demand by increasing shipments and system productivity Slide 9 29 Sept. 2021 800% Actuals Today Roadmap (ambition) 700% year [#] Fab Model: EUV estimated (3600D) wph] x Fab Capacity Exposures System Memory per 600% year (kwspm*) per fab wph] [units per[ 45 10-20 9-18 Logic put 50
Slide 10: Higher than previously projected DRAM adoption will be an additional driver for EUV demand
Higher than previously projected DRAM adoption will be an additional driver for EUV demand Slide 10 29 Sept. 2021 800% Actuals Today 700% year Memory per 600% 500% exposed 400% wafers 300% EUV 200% Logic Total 100% 2018 2019 2020 2021 2022 2023 2024 2025 Public
Slide 11: EUV reduces lithography and process steps resulting in defect, cost and cycle time reduction
EUV reduces lithography and process steps resulting in significant defect, cost and cycle time reduction Slide 11 29 Sept. 2021 No EUV – EUV (0.33 NA) Critical Total 120% litho masks process steps # Process stepsNo EUV No EUV 100% No EUV EUV (0.33 NA) EUV 80% (0.33 NA) EUV (0.33 NA) 60% EUV value to
Slide 12: Samsung reported >20% defect reduction at EUV introduction versus multi-patterning immersion
Samsung reported >20% defect reduction at EUV introduction versus multi-patterning immersion (ArFi) Slide 12 29 Sept. 2021 Eliminating multi-patterning related defects Defects ratio Patterning ArFi MPT EUV SET> 20% DRAM D1xBLP [%] SEM Image ration Defects Enhancing patterning precision and cost BLP
Slide 13: EUV is in production for both Logic and DRAM, and its adoption is expected to continue to grow
EUV is in production for both Logic and DRAM, and its adoption is expected to continue to grow EUV extension and EUV 0.55 NA introduction is expected to extend EUV values to the next decade Our increased EUV product and service value is expected to continue to drive profitability
Slide 14: ASML is expected to continue to extend DUV and EUV platforms
ASML is expected to continue to extend DUV and EUV platforms at the pace required by our customers Slide 14 29 Sept. 2021 mWavelength NA, Half pitch 2020 2021 2022 2023 2024 ³ 2025 DUV NXT:2000i NXT:2050i NXT:2100i NEXT 1.35 NA, 38 nm 2.0 nm | 275wph 1.5 nm | 295wph 1.3 nm | 295wph (ArFi) NXE:3400C
Slide 15: EUV 0.55 NA expected to be added to EUV portfolio for HVM in 2025-2026
EUV 0.55 NA is expected to be added to EUV portfolio to support high-volume manufacturing in 2025—2026 Slide 15 29 Sept. 2021\ Wavelength NA, Half pitch 2020 2021 2022 2023 2024 ³ 2025 NXE:3400C NXE:3600D NXE:3800E NXE:4000F 0.33 NA, 13 nm 2 3 3 <0.8 nm | >220wph 1.5 nm | 135 wph / 145wph 1.1 nm | 1
Slide 16: EUV 0.55 NA expected to reduce litho and process steps for Logic and DRAM
EUV 0.55 NA expected to once again reduce litho and process steps at the horizon of 2025—2026 for both Logic and DRAM Slide 16 29 Sept. 2021 Critical litho masks Total process steps EUV value to customers 120% EUV EUV Less defects No EUV (0.33 NA) No EUV (0.33 NA) 100% EUV EUV Cost reduction (0.33 N
Slide 17: EUV 0.55 NA is an evolutionary step on EUV technology
EUV 0.55 NA is an evolutionary step on EUV technology, we have the source, we developed new optics Slide 17 29 Sept. 2021 NXT EUV 0.33 NA EUV 0.55 NA System changes platform to platform High 193 nm deep UV light 13.5 nm EUV light 13.5 nm EUV light Source Many Existing changes technology Source: diff
Slide 18: Large part of 0.55 NA platform common with EUV 0.33 NA
A large part of our EUV 0.55 NA platform is expected to be common with our EUV 0.33 NA reducing introduction risk, cost and R&D Slide 18 29 Sept. 2021 RETICLE HANDLING RETICLE STAGE PROJECTION OPTICS BOX ILLUMINATION SOURCE WAFER HANDLING WAFER STAGE DRIVE LASER Specific Common Public
Slide 19: EUV optical projection mirrors: ASML and Zeiss cooperation
EUV optical projection mirrors ASML and Zeiss cooperation on mirror design and unique metrology system Slide 19 29 Sept. 2021 EUV 0.55 NA mirror metrology fully operational at Zeiss Public
Slide 20: EUV optical projection mirrors: mirrors of unprecedented size and accuracy
EUV optical projection mirrors Mirrors of unprecedented size and accuracy Slide 20 29 Sept. 2021 EUV 0.55 NA optics: 1m diameter with accuracy of 20pm If you were to enlarge these mirrors to the size of planet Earth, the biggest aberration would be the diameter size of a human hair Public
Slide 21: Facilities for integration of EUV 0.55 NA in progress
Facilities for integration of EUV 0.55 NA in progress Slide 21 29 Sept. 2021 Cleanroom, Fab ASML Veldhoven Public
Slide 22: EUV 0.55 NA manufacturing expected to improve quality and cycle time through 4 pre-qualified modules
EUV 0.55 NA manufacturing is expected to improve quality and cycle time through integrations of 4 pre-qualified modules Slide 22 29 Sept. 2021 Pre-qualified module: RETICLE Pre-qualified Pre-qualified module : OPTICS module: SOURCE Pre-qualified module : WAFER Integration is now ongoing at ASML for
Slide 23: EUV is in production for both Logic and DRAM, and its adoption is expected to continue to grow
EUV is in production for both Logic and DRAM, and its adoption is expected to continue to grow EUV extension and EUV 0.55 NA introduction is expected to extend EUV values to the next decade Our increased EUV product and service value is expected to continue to drive profitability
Slide 24: Increased EUV product and service value combined with cost reduction expected to drive better profitability
Increased EUV product and service value combined with Slide 24 cost reduction expected to drive better profitability 29 Sept. 2021 400% Actuals Today Roadmap 300% day** per ghput 200% 2 nm wafer[nm] throu rlay Average stem 100% 1 nm Ove Sy 2018 2019 2020 2021 2022 2023 2024 2025 NXE:3400B NXE:3400C
Slide 25: EUV products and business opportunity Key messages
EUV products and business opportunity Key messages Slide 25 29 Sept. 2021 ASML EUV lithography extends our Logic and DRAM customers roadmap by providing lithography resolution improvement, state of the art overlay performance and year on year cost reduction Our customers are using EUV in Logic node
Slide 26: Forward Looking Statements
Forward Looking Statements Slide 26 29 Sept. 2021 This presentation contains statements that are forward-looking, including statements with respect to expected industry and business environment trends including expected growth, outlook and expected financial results, including expected net sales, gr
Slide 27: ASML Small Talk 2021 Investor Day Virtual
ASML Small Talk 2021 Investor Day Virtual