Slide 1: Investor Presentation March 2018
For personal use only Investor Presentation March 2018
Slide 2: Weebit Nano at a Glance
For personal use only Weebit Nano AT A GLANCE Listed on the ASX in August 2016 Targeting the memory market which is estimated at > USD$100B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based
Slide 3: Share Information
For personal use only SHARE INFORMATION CAPITAL STRUCTURE SHAREHOLDING BREAKDOWN 01 ASX Code: WBT 02 Share price: 5.0c1 7.57% 44.91% 47.52% 03 Shares on issue: 1443m1 04 Options: 150m1,2 TOP 20 OTHER 05 Market cap: A$72m1 BOARD & Excluding Board & MANAGEMENT Management 06 Cash: $3.4m3 1. As of 16 Ma
Slide 4: Introducing Dr. Yoav Nissan-Cohen
INTRODUCING For personal use only DR. YOAV NISSAN-COHEN • PhD in Applied Physics focused on SiOx memories • Guided by Prof. Dov Frohman, the inventor of the first Non-Volatile memory • Consulted to Intel corporation on Non-Volatile Memories • Researcher in GE R&D center in NY, focused on semiconduct
Slide 5: Introducing Fred Bart
For personal use only INTRODUCING FRED BART • Transformed his family business to a $200M business • Vast business experience in many different domains • Including multiple ASX listed companies • Chairman and major shareholder of Electro Optics Systems (ASX:EOS) • Market capitalisation of $263M1 • Ch
Slide 6: First Class Leadership Team
For personal use only FIRST CLASS LEADERSHIP TEAM EXECUTIVE DIRECTOR CHAIRMAN CEO CTO CFO PhD. in Applied Physics, Ex-Intel EVP Extensive management Two decades in 20 Years CPA experience focus on SiOx memories IEEE Fellow and sales experience Semiconductor engineering CEO of Tower 37 years in the 4
Slide 7: Highly Skilled Non-Exec/Advisory Team
For personal use only HIGHLY SKILLED NON-EXEC/ADVISORY TEAM DIRECTOR DIRECTOR DIRECTOR INVENTOR Chairman and major 15 years in Investment Banking Extensive management Scientist of the Year 2013 shareholder of Electro and financial experience R&D magazine Optics Systems (EOS) Founding member of Led t
Slide 8: Weebit ReRAM Technology
For personal use only WEEBIT ReRAM TECHNOLOGY Next generation memory technology Faster and more efficient than flash memory On track to achieve 40nm 1Mb array by mid-2018 – comparable with current embedded memory technology Key differentiator: WBT uses silicon oxide – the most commonly used material
Slide 9: Expectations Met
For personal use only EXPECTATIONS MET Feb 2017 Every committed milestone met 40nm Array results NOV 2017 ON TRACK 40nm working cells to reach 40nm OCT 2017 Mbit array 300nm 4Kbit Array by mid-2018 MAY 2017 Miniaturisation started NOVEMBER 2016 Successful Technology transfer to Leti SEPT 2016 Develo
Slide 10: Alliance with CEA-Leti
For personal use only ALLIANCE WITH CEA - LETI A real partnership, with ideal mix of expertise, innovation and flexibility FROM PROTOTYPES TO MANUFACTURING CUSTOMERS PRODUCTION ALLIANCES Intel, ST Microelectronics, Global Proven international track record in Over 330 industrial partners foundries mo
Slide 11: ReRAM: Forecast for Exponential Growth in Market Value
For personal use only ReRAM: FORECAST FOR EXPONENTIAL GROWTH IN MARKET VALUE o Emerging memory technologies forecast for significant growth o ReRAM technology expected to be the fastest growing emerging memory technology with a CAGR of 119% o ReRAM forecast growth due to competitive cost/performance
Slide 12: ReRAM Density Will Match Flash
For personal use only ReRAM DENSITY WILL MATCH FLASH Highest capacity memory chips best address Storage Class Memory = Flash Gb = Giga-bit, i.e. billions of bits 12
Slide 13: Neuromorphic Computation
For personal use only NEUROMORPHIC COMPUTATION ReRAM well positioned for significant growth in Artificial Intelligence o ReRAM’s operation mimics the biological computation at the synaptic level o Physical similarities lead to functional similarities o Combines memory and processing units using syna
Slide 14: ReRAM Competitive Landscape
For personal use only ReRAM COMPETITIVE LANDSCAPE Speed to market is a significant competitive advantage Materials * Silicon Oxide Pr, Ca, Mn Silver Tellurium Memory 40nm 4Kb achieved Start work on 8Mb Array 512Kb Capacity Mb Array by mid-2018 Mb Array Retention 10Y > room temp No data 10Y @ 85 °C 4
Slide 15: 2018 Plans
For personal use only 2018 PLANS TECHNICAL • Develop a 40nm Mbit array by mid-2018 Addresses most needs of the embedded memory market • Improved endurance and retention to meet industry standards by end 2018 • Define a plan and be on the path to develop 28nm technology Will open up new potential
Slide 16: Disclaimer
For personal use only DISCLAIMER This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; ou
Slide 17: Thank You
For personal use only THANK YOU