Bluglass Ltd · ASX:BLG
Bluglass — Investor Presentation (February 2019)
32 slides from Bluglass's investor presentation, Feb 7, 2019
Slide 1: BluGlass presents latest RPCVD data and tunnel junction breakthrough at Photonics West
07 February 2019 BLUGLASS PRESENTS LATEST RPCVD DATA AND TUNNEL JUNCTION BREAKTHROUGH AT PHOTONICS WEST CONFERENCE Australian technology innovator, BluGlass Limited (ASX:BLG) has today presented its latest remote plasma chemical vapour deposition (RPCVD) technical data, at the Photonics West Confere
Slide 2: RPCVD grown tunnel junctions could be commercially compelling
RPCVD grown tunnel junctions could be commercially compelling for all high-performance nitride devices, including for high value applications such as LEDs for automotive lighting, UV LEDs for water purification, high power laser diodes for industrial machining applications and high efficiency multi-
Slide 3: RPCVD of Group III-Nitrides for LED Tunnel Junction Applications
Remote Plasma Chemical Vapour Deposition (RPCVD) of Group III-Nitrides for LED Tunnel Junction Applications Dr Ian Mann CTO/COO - BluGlass Limited imann@bluglass.com.au Feb 6th, 2019 SPIE Photonics West OPTO 2019 – San Francisco Page 1
Slide 4: Forward Looking Statements
FORWARD LOOKING STATEMENTS This document has been prepared by BluGlass Limited to provide readers with a summary of the Company and the Company’s technology Any statements, opinions, technical data and information or other material contained in this document do not constitute any commitments, repres
Slide 5: Outline
OUTLINE BluGlass Limited Overview Introduction to RPCVD RPCVD GaN Growth RPCVD p-n Junctions and MQWs RPCVD for Tunnel Junctions Future work: Cascade LEDs Summary Page 3 BLUGLASS LIMITED – SPIE Photonics West OPTO 2019 6 February 2019
Slide 6: Acknowledgements
ACKNOWLEDGEMENTS BLUGLASS LIMITED ▪ S. Barik, D. Liu, J. D. Brown, M. Wintrebert-Fouquet, A. J. Fernandes, P. P. -T. Chen, Q. Gao, V. Chan ▪ D. Timoney, S Chiappa, S. O’Farrell, R. Connor, A. Burgess, I. Cruz MOCVD SOLUTIONS LTD, UK ▪ Laurence Considine Page 4 BLUGLASS LIMITED – SPIE Photonics West
Slide 7: BluGlass Limited Corporate Overview
BLUGLASS LIMITED CORPORATE OVERVIEW COMPANY CAPABILITIES & TALENT FACILITIY SERVICES 2006 DEVELOPING RPCVD 22 STAFF SYDNEY Established via a Conducting applied research and 8 PhDs, Highly specialist AUSTRALIA spin off from commercialisation of RPCVD for LED, R&D, Engineering & Macquarie microLED and
Slide 8: BluGlass RPCVD Technology
BLUGLASS RPCVD TECHNOLOGY RPCVD combines the scalability of MOCVD with the unique benefits of a nitrogen plasma source OUR SOLUTION Lower-temperature manufacturing processes, several hundred degrees cooler than MOCVD Lower cost inputs Higher-performing devices Active nitrogen density, from plasma so
Slide 9: Facility Capability & Capacity in 2019
FACILITY CAPABILITY & CAPACITY IN 2019 Existing RPCVD & MOCVD Labs New Production Bay 1 AIXTRON – BluGlass (3 Prototyping Systems) (1 x RPCVD System) Collaboration – (RPCVD on a G4) USE: 2 RPCVD system for process USE: RPCVD industry projects USE: RPCVD scaling (6x6”) development Support hardware an
Slide 10: BluGlass Differentiation – High Density Nitrogen Plasma Source
BLUGLASS DIFERENTIATION – HIGH DENISTY NITROGEN PLASMA SOURCE PLASMA TEST RIG EXPERIMENTAL SETUP Camera view Narrow Pass Filter (820 nm) R(mm) RADIAL DISTRIBUTION PROFILE OF ATOMIC NITROGEN Intensity (a.u.) 0 50 100 R(mm) Page 8 BLUGLASS LIMITED – SPIE Photonics West OPTO 2019 6 February 2019
Slide 11: In-situ Optical Emission Spectroscopy for RPCVD
IN-SITU OPTICAL EMISSION SPECTROSCOPY FOR RPCVD N2 first positive system N2 Plasma IN-SITU OES DURING RPCVD GROWTH Atomic Nitrogen INDIUM GALLIUM N2 second positive system AlN N2 Plasma OES during growth of InGaN/GaN MQWs Page 9 BLUGLASS LIMITED – SPIE Photonics West OPTO 2019 6 February 2019
Slide 12: RPCVD u-GaN Grown on MOCVD GaN Templates
RPCVD u-GaN GROWN ON MOCVD GaN TEMPLATES (ON PLANAR SAPPHIRE) CROSS-SECTIONAL TEM: RPCVD u-GaN (TOP LAYER) CROSS-SECTIONAL TEM: DEFOCUS IMAGES ON AN MOCVD TEMPLATE -Df Low temperature RPCVD GaN RPCVD growth RPCVD GaN 0Df REGROWTH (<850 °C) produces MOCVD GaN 50nm INTERFACE good crystal +Df quality M
Slide 13: RPCVD – Low Carbon at Low Temperature
RPCVD – LOW CARBON AT LOW TEMPERATURE (ON PLANAR SAPPHIRE) SIMS: RPCVD u-GaN ON MOCVD GaN TEMPLATE C: 3.5 E16 /cm3 Low carbon levels with good crystal quality with low temperature O: 3.5 E16 /cm3 Regrowth growth (<850 °C) H: 8.0 E16 /cm3 Interface Concentration (Atoms/cm3) This crystal quality with
Slide 14: RPCVD n-type GaN
RPCVD n-TYPE GaN (GROWN AT < 850 °C) RPCVD n-GaN OVERGROWN ON AN MOCVD u-GaN TEMPLATE RPCVD n-GaN SIMS Hall VS. C.C. FOR RPCVD n-GaN C.C. (Hall): 2.3E18 cm-3 Atomic conc. (SIMS): 2.3E18 cm-3 300 1.2E20 cm-3 250 100 cm2/Vs Mobility (cm2/V.s) Concentration (Atoms/cm3) 200 150 100 50 0 5.0E+17 5.0E+1
Slide 15: RPCVD p-type GaN
RPCVD p-TYPE GaN (GROWN AT < 850 °C) RPCVD p-GaN OVERGROWN ON AN MOCVD u-GaN TEMPLATE RPCVD p-GaN SIMS C.C. (Hall): 2.1E18 cm-3 Room Temperature p-GaN Hall Measurements Atomic conc. (SIMS): 5.0E19 cm-3 C.C. Mobility Resistivity Concentration (Atoms/cm3) (/cm3) (cm2/Vs) (Ωcm) 2.1E18 3.5 1.1 1.4E18 5
Slide 16: RPCVD p-n Junction
RPCVD p-n JUNCTION (GROWN AT < 850 °C) p-n JUNCTION WITH RPCVD p-GaN OVERGROWN ON AN MOCVD n-GaN TEMPLATE ELECTRO-LUMINESCENCE (EL) DEMONSTRATION RPCVD p-n JUNCTION SIMS Concentration (Atoms/cm3) RPCVD MOCVD Depth (µm) ▪ Sharp Mg diffusion profile due to low temperature growth ▪ Clean re-growth inte
Slide 17: Low Temperature RPCVD p-GaN Overgrowth on Partial LEDs
LOW TEMPERATURE RPCVD p-GaN OVERGROWTH ON PARTIAL LEDs RPCVD p-GaN GROWN AT LOWER TEMPERATURE COMPARED TO MOCVD p-GaN FOR LED APPLICATIONS EL SPECTRUM AT 200 mA RPCVD p-GaN LED STRUCTURE = 554 nm p++ GaN FWHM = 42.7 nm RPCVD p-GaN u-GaN cap Intensity (a.u.) InGaN/GaN green MQW n-GaN MOCVD partial
Slide 18: RPCVD MQWs
RPCVD MQWs 5 QWs 15 InGaN/GaN QWs on nGaN template PL: : 467 nm HR-XRD indicates FW: 33 nm good structural quality Wavelength (nm) 5 QWs Omega-2theta () RPCVD growth of InGaN MQWs: EL: : 471 nm • Low temperature FW: 31 nm • Low hydrogen environment Vf = 3.37 V @ 20 mA Page 16 BLUGLASS LIMITED – S
Slide 19: All RPCVD LED Grown on n-GaN MOCVD Template
All RPCVD LED GROWN ON n-GaN MOCVD TEMPLATE p++ GaN STEM BF: 5x InGaN/GaN Blue MQWs STEM DF: 5x p-AlGaN/p-GaN EBL S.L. p-GaN RPCVD EBL InGaN/GaN MQW/SQW n-GaN n-GaN MOCVD u-GaN buffer c-plane Sapphire Page 17 BLUGLASS LIMITED – SPIE Photonics West OPTO 2019 6 February 2019
Slide 20: All RPCVD LEDs Electroluminescence Spectra
ALL RPCVD LEDS ELECTROLUMINESCENCE SPECTRA Electroluminescence Spectra OF RPCVD of All RPCVD LED's LEDs 1 0.9 LED Peak Wavelength (nm) FWHM (nm) 0.8 Normalised Intensity 0.7 0.6 Blue MQW 471 25 0.5 Green MQW 520 31 0.4 0.3 Yellow SQW 569 83 0.2 0.1 Amber SQW 623 82 0 300 350 400 450 500 550 600 650
Slide 21: Low Temperature RPCVD p-GaN for Blue LEDs Demonstration
LOW TEMPERATURE RPCVD p-GaN FOR BLUE LEDs DEMONSTRATION LED WITH RPCVD p-GaN, COMPARED TO COMMERCIAL FULL BLUE LED LIGHT OUTPUT AND Vf VS CURRENT 700 4.5 p++ GaN (15 nm) RPCVD 4 600 p-GaN (80 nm) 3.5 500 3 p-GaN (40 nm) LOP (mW) 400 2.5 Vf (V) EBL (12 nm) MOCVD 2 300 Commercial partial Blue LED 1.5
Slide 22: GaN Tunnel Junction
GaN TUNNEL JUNCTION TUNNEL JUNCTION IN REVERSE BIAS p++GaN n++GaN 𝑁𝐴 + 𝑁𝐷 𝑤∝ 𝑁𝐴 𝑁𝐷 Being a high bandgap material, GaN has a wide depletion layer width STANDARD n++ GaN/p++ GaN TUNNEL JUNCTION REQUIREMENTS: ND+ N A- ▪ High doping for both p++ GaN and n++ GaN ▪ Sharp dopant profile at TJ…
Slide 23: GaN Tunnel Junction/n-GaN as Top Contact to Replace ITO
GaN TUNNEL JUNCTION/n-GaN AS TOP CONTACT TO REPLACE ITO CONVENTIONAL LED LED with TUNNEL JUNCTION LASER DIODE with TUNNEL JUNCTION ITO n-GaN n-GaN P++ n++ Tunnel n-AlGaN/GaN SL p-GaN Junction n++ Tunnel P++ p++ Junction MQW p-GaN n-GaN p-GaN WG MQW p-GaN WG n-GaN EBL MQW n-GaN WG • Replacement of IT
Slide 24: Tunnel Junction with Buried p-GaN
TUNNEL JUNCTION WITH BURIED p-GaN MOCVD-GROWN TUNNEL JUNCTIONS n-GaN Tunnel n++ GaN ▪ High hydrogen content & Mg-H complex formation in p-GaN Junction p++ GaN ▪ Post-growth annealing required for p-GaN activation ▪ Poor Hydrogen Diffusion in vertical direction due to high hydrogen diffusion barrier
Slide 25: RPCVD Tunnel Junction Light Output and Vf vs Current
RPCVD TUNNEL JUNCTION LIGHT OUTPUT AND Vf VS CURRENT 700 5 KEY: n-GaN (50 nm) Commercial partial blue LED with RPCVD TJ 4.5 600 n++ GaN (20 nm) Commercial full blue LED with ITO 4 RPCVD p++ GaN (15 nm) 500 3.5 p-GaN (60 nm) 3 400 LOP (mW) Vf (V) p-GaN (40 nm) 2.5 300 EBL (12 nm) 2 MOCVD Commercial u
Slide 26: RPCVD Hybrid Tunnel Junction Light Output and Vf vs Current
RPCVD HYBRID TUNNEL JUNCTION LIGHT OUTPUT AND Vf VS CURRENT 700 4.5 4 600 n-GaN (50 nm) 3.5 RPCVD n++ GaN (20 nm) 500 3 LOP (mW) 400 2.5 Commercial un-activated Vf (V) MOCVD full Blue LED MOCVD 300 2 c-plane PSS Sapphire 1.5 200 KEY: 1 100 Commercial full blue LED with HYBRID TJ 0.5 Commercial full
Slide 27: RPCVD Hybrid Tunnel Junction – Low Vf
RPCVD HYBRID TUNNEL JUNCTION – LOW Vf n-GaN (50 nm) RPCVD n++ GaN (20 nm) Commercial un-activated BLG Work MOCVD full Blue LED MOCVD c-plane PSS Sapphire 90 IV CURVE DVf = 0.6 V at 80 A/cm2 80 Current density (A/cm 2) 70 60 D. Minamikawa et al. Phys. Status Solidi B. 252 NO. 5, 1127-1131 (2015) 50 4
Slide 28: Future Work: Cascade LED
FUTURE WORK: CASCADE LED EFFICIENCY DROOP IS A MAJOR ISSUE FOR HIGH CASCADE LEDS: BRIGHTNESS LED APPLICATIONS ▪ Compact size & lower cost due to more LEDs grown in a single wafer – high brightness in a small area Desired driving Peak EQE current for peak ▪ Good candidate for automotive lighting appl
Slide 29: Future Work: Polarisation Engineered InGaN Tunnel Junction
FUTURE WORK: Polarisation Engineered InGaN tunnel junction LED WITH InGaN TUNNEL JUNCTION POLARISATION ENGINEERED InGaN TUNNEL JUNCTION: n-GaN ▪ Reduced depletion layer width due to high density dipole n++ sheet charge developed by InGaN SQW InGaN SQW TUNNEL p++ JUNCTION ▪ High indium content InGaN
Slide 30: Future Plans – RPCVD Roadmap to Full-Suite Solution
FUTURE PLANS – RPCVD ROADMAP TO FULL-SUITE SOLUTION RPCVD ROADMAP – FROM A COMPLEMENTARY SOLUTION TO A STAND-ALONE PLATFORM All RPCVD RPCVD + MOCVD • RPCVD RGB LEDs • RPCVD Tunnel Junction for cascade LED to overcome efficiency droop RPCVD VALUE ADDS Hybrid MOCVD/RPCVD solution to help enhance or en
Slide 31: Summary
SUMMARY BluGlass has demonstrated high quality growth at low temperature in a low hydrogen environment on a scalable RPCVD platform compatible with MOCVD on planar sapphire Success in demonstrating that RPCVD can enable: ▪ LEDs using tunnel junctions ▪ long wavelength InGaN based RGB microLEDs THANK
Slide 32: Thank you
Thank you Dr Ian Mann CTO/COO - BluGlass Limited imann@bluglass.com.au Page 30