ASML Holding NV · EURONEXT:ASML
ASML Holding NV — Technical Presentation (February 2016)
37 slides from ASML Holding NV's technical presentation, Feb 26, 2016
Slide 1: Forward Looking Statements
Forward Looking Statements Public This document contains statements relating to certain projections and business trends that are forward-looking, including statements with respect to productivity of our tools and systems performance, EUV system performance, expected industry trends, and EUV targets
Slide 2: EUV lithography performance for manufacturing: status and outlook
Public EUV lithography performance for manufacturing: status and outlook Alberto Pirati ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands SPIE 2016
Slide 3: Special appreciation to
Special Public ASML: Slide 3 appreciation to: 23 Feb 2016 • Rudy Peeters • Christophe Smeets • Matthew Colburn of IBM • Daniel Smith • Kars Troost • Dan Corliss of IBM • Roderik van Es • Rik Hoefnagels • Danilo de Simone of IMEC • Eric Verhoeven • Gijsbert Rispens • Tony Yen of TSMC • Jo Finders • R
Slide 4: EUV provides lower cost, higher yield, faster time to market
EUV provides lower cost, higher yield, faster time to Public market Slide 4 23 Feb 2016 Expected Expected Design Critical litho Wafer cost Yield Time-to-Market 54x ArF 1D Ref. Ref. immersion 1D 9x EUV Ref. + 21x ArFi 2D 9x EUV Ref. +19x ArFi
Slide 5: NXE extension roadmap to optimize capital efficiency
NXE extension roadmap to optimize capital efficiency Public Slide 5 23 Feb 2016 1st Logic DRAM 55 WpH 125 WpH 145 WpH 185 WpH Shipment Half pitch Focus DCO/MMO OPO 2013 R&D NXE:3300B 250W LPP 22 nm 110 nm 3.0/5.0 nm 7.0 nm UVLS D1H SNEP 3350B 2015 7 NXE:3350B 16 nm 70 nm 1.5/2.5 nm 3.5 nm 20% PFR il
Slide 6: Outline
Outline Public Slide 6 23 Feb 2016 • Throughput & Wafers per Day (WpD) • Availability • Defectivity, imaging and overlay
Slide 7: Wafers per day capability: multiple NXE:3300B above 1,000
Wafers per day capability: multiple NXE:3300B above 1,000 NXE:3350B demonstrated 1,368 Public Slide 7 23 Feb 2016 NXE:3300B at customers NXE:3350B at ASML factory 1500 1400 1300 1200 1100 1000 Wafers per day 900 800 700 600 500 400 300 WpD: maximum number 200 of wafers exposed in a 100 24 hr period
Slide 8: NXE:3300B productivity at customer: average ~800 wafers per day
NXE:3300B productivity at customer: average ~800 Public wafers per day over multiple weeks Slide 8 23 Feb 2016 12000 100% 90% 10000 80% Total Wafers per day (cumulative) 70% 8000 Availability 60% Wafers per day 6000 50% 40% 4000 30% 20% 2000 10% 0 0% Day Day Day Day Day Day Day Day Day Day Day Day D
Slide 9: NXE:3350B productivity in ASML factory: ~950 wpd
NXE:3350B productivity in ASML factory: ~950 wpd Public average over 8 days Slide 9 23 Feb 2016 8000 7000 6000 Cumulative wafers per day 5000 4000 3000 2000 1000 0 Day 1 Day 2 Day 3 Day 4 Day 5 Day 6 Day 7 Day 8
Slide 10: Demonstrated WpH on NXE:3350B
Demonstrated 75 WpH on NXE:3350B Public Further improvements with 125W settings Slide 10 23 Feb 2016 NXE:3350B, NXE:3300B, at customers In the ASML factory 100 90 80 Wafers per hour 70 60 50 40 30 20 10 NXE:3500B ATP test: 26x33mm2, 96 0 fields, 20mJ/cm2 2014 Q1 2014 Q2 2014 Q3 2014 Q4 2015 Q3 2015
Slide 11: NXE:3350B: 125W settings qualified and ready for field roll out
NXE:3350B: 125W settings qualified and ready for Public field roll out Slide 11 23 Feb 2016 Mean pulse energy at Intermediate Focus ~3mJ EUV power at Intermediate Focus 125W Energy control Overhead ~20%
Slide 12: NXE:3300B productivity supports customer process development
NXE:3300B productivity supports customer Public process development Slide 12 23 Feb 2016 >300k wafers exposed on NXE:3300B at customer sites 350,000 300,000 Total number of wafers exposed 250,000 200,000 150,000 100,000 50,000 0 2014 2015 2016 Work week
Slide 13: Acceleration in power scaling towards >200W
Acceleration in power scaling towards >200W builds Public further confidence in EUV productivity Slide 13 23 Feb 2016 240 220 3100 NOMO (delivered) 3100 MOPA (not shipped) 200 3100 MOPA+PP (not shipped) 180 See: 9776-21, Michael Purvis 3300 MOPA+PP (delivered) “Advances in predictive 160 3400 MOPA+P
Slide 14: Outline
Outline Public Slide 14 23 Feb 2016 • Throughput & Wafers per Day (WpD) • Availability • Defectivity, imaging and overlay
Slide 15: Availability: capability beyond 75% proven on multiple field systems
Availability: capability beyond 75% proven on multiple field systems Public 2016 focus: reduce scheduled maintenance, reduce variability Slide 15 23 Feb 2016 ~ 50% of downtime is scheduled down Maximum 4 weeks average realized in the field Uptime = productive time + standby time + engineering time
Slide 16: Droplet Generator: Principle of Operation
Droplet Generator: Principle of Operation Public Slide 16 23 Feb 2016 • Tin is loaded in a vessel & heated above melting point Sn • Pressure applied by an inert gas Filter • Tin flows through a filter prior to the nozzle Gas Modulator Nozzle Droplet position, m 10 5 0 -5 -10 0 5 10 15 20 25 30 Time
Slide 17: Droplet Generator: ~2x improvements in run time, swap time
Droplet Generator: ~2x improvements in run time, swap time Public Next generation DGen: demonstrated > 1 month lifetime capability Slide 17 23 Feb 2016 1000 20 900 18 800 16 700 Swap time 14 Run time (hours) Swap time (hours) 600 12 500 10 400 8 Type 1 Dgen (field) 300 6 Type 2 Dgen (field) 200 4 Ty
Slide 18: Continuous improvements in collector protection at increasing power
Continuous improvements in collector protection at increasing power Public Slide 18 100 Gpulses capability demonstrated at 125W 23 Feb 2016 40 W 80 W 125 W configuration configuration configuration Degradation rate Degradation rate Degradation rate = 0.7% / Gpulse = 0.6% / Gpulse = 0.4% / Gpulse
Slide 19: 250W feasibility proven without increase in protective Hydrogen flow
250W feasibility proven without increase in protective Hydrogen flow No rapid collector contamination, allowing stable droplets and >125 w/hr@20 mJ/cm² Public Slide 19 23 Feb 2016 ~200W dose controlled power
Slide 20: EUV productivity realization on track
EUV productivity realization on track Public Slide 20 23 Feb 2016 System Source Throughput Productivity Timing availability power [W] [Wafers/hr] [Wafers/day] [%] 2015 125 >75 >70% >1000 2016 250 >125 >80% >1500 Done Capability demonstrated On track
Slide 21: Outline
Outline Public Slide 21 23 Feb 2016 • Throughput & Wafers per Day (WpD) • Availability • Defectivity, imaging and overlay
Slide 22: Front-side reticle defectivity: 10x reduction/year realized
Front-side reticle defectivity: 10x reduction/year realized Public Slide 22 23 Feb 2016 100 NXE:3100 # # Added PRP Added particles > 92nm per reticle pass Test Cycles Particles Value NXE:3300B 10 A 228 0 <0.004 NXE:3350B B 140 0 <0.007 1 C 450 0 <0.002 D 222 1 0.0045 0.1 E 133 0 <0.007 Cumulative 11
Slide 23: 200 wafers exposed using reticle with 40W pellicle
200 wafers exposed using reticle with 40W pellicle Ref: 9776-1, Britt Turkot “EUV progress towards HVM • Global transport readiness” • Multiple location handling 23 23 Feb 2016
Slide 24: 200 wafers exposed using reticle with 40W pellicle
200 wafers exposed using reticle with 40W pellicle • NO RETICLE ADDERS OBSERVED IN WAFER PRINTS • Particles on pellicle do not appear to migrate to reticle surface • ASML pellicle frame design is mitigating adder rate • defectivity assessment continuing Ref: 9776-1, Britt Turkot “EUV progress toward
Slide 25: Overlay impact with NXE pellicle < 0.17 nm
Overlay impact with NXE pellicle < 0.17 nm Public Mounted on preliminary tooling; New tooling will reduce overlay further Slide 25 23 Feb 2016 Overlay impact Overlay impact reticle + studs reticle + studs pellicle assy 99.7% 99.7% x: 0.07nm x: 0.17 nm y: 0.08nm y: 0.07 nm See: 9776-71, Derk Brouns “
Slide 26: NXE:3350B: 2x overlay improvement at 16nm resolution
NXE:3350B: 2x overlay improvement at 16nm resolution Public Completed qualification for five systems in 2015 Slide 26 23 Feb 2016 Reticle Stage Overlay set up Projection Optics Better thermal control Set-up and modeling Higher lens transmission improved increased servo bandwidth improvements aberrat
Slide 27: Significant improvements in lens performance
Significant improvements in lens performance Public Slide 27 23 Feb 2016 0.4nm Wavefront RMS (nm) Optical transmission 0.2nm 0nm NXE:3300B NXE:3350B NXE:3300B NXE:3350B
Slide 28: Overlay and focus performance NXE:3350B
Overlay and focus performance NXE:3350B Public Well in specification due to Hardware improvements and new calibrations Slide 28 23 Feb 2016 Dedicated chuck overlay [nm] Matched machine overlay [nm] Focus uniformity [nm] 3.0 3.0 20.0 18.0 2.5 2.5 16.0 2.0 2.0 14.0 12.0 1.5 1.5 10.0 8.0 1.0 1.0 6.0 0.
Slide 29: Matched machine overlay below 4.5nm for over a year
Matched machine overlay below 4.5nm for over a year Public (NXE:3300B to ArF immersion) Slide 29 23 Feb 2016 Tool A - Tool B - Tool A - Tool B - 40W configuration 80W configuration 80W configuration 40W configuration Courtesy of IBM Data collected over ~18 months, no calibrations executed
Slide 30: NXE:3350 Imaging: 16nm dense lines and 20nm iso space
NXE:3350 Imaging: 16nm dense lines and 20nm iso Public space consistently achieve <1.0nm Full Wafer CDU 16nm dense lines 20nm iso space Slide 30 23 Feb 2016 Illumination: Dipole 90 degrees. Dose ~45mJ/cm2
Slide 31: New resist materials: towards 16nm resolution at full throughput
New resist materials: towards 16nm resolution at full throughput best results show 19% EL , 4.4nm LWR @ 18.5mJ/cm2 16nm Horizontal NXE:3350 New formulation New formulation Dense lines/spaces Reference CAR non-CAR CAR SEM image @BE/BF Dose 40 mJ/cm2 18.5 mJ/cm2 25 mJ/cm2 Exposure Latitude 16 % 19 % 1
Slide 32: NXE:3400B: 13 nm resolution at full productivity
NXE:3400B: 13 nm resolution at full productivity Public Supporting 5 nm logic, <15nm DRAM requirements Slide 32 23 Feb 2016 Reticle Stage Improved clamp flatness for focus and overlay Projection Optics Overlay set up Continuously Improved Set-up and modeling aberration performance improvements Resol
Slide 33: Reduction in Pupil Fill Ratio for Contact Holes
Reduction in Pupil Fill Ratio for Contact Holes contrast improvement Public Slide 33 16 nm staggered holes resolved 23 Feb 2016 NXE 3350, CAR hexapole illumination with Pupil Fill Ratio between 10% and 40% See: 9776-62, Jo Finders “Contrast optimization for 0.33NA lithography”
Slide 34: 2D clips: pitch 32nm in x- and y- direction
2D clips: pitch 32nm in x- and y- direction, k1=0.39 Public Better pattern fidelity with lower Pupil Fill Ratio Slide 34 23 Feb 2016 Pupil Fill Ratio=40% Pupil Fill Ratio=20% See: 97762, Jo Finders “Contrast optimization for 0.33NA lithography”
Slide 35: 13nm Half Pitch resolved with non-CAR resist
13nm Half Pitch resolved with non-CAR resist 17%EL and 4.2nm LWR @ 31mJ/cm2 dose 13nm Horizontal NXE:3350 Baseline New formulation Dense lines CAR non-CAR SEM image @BE/BF Dose ~40 mJ/cm2 31 mJ/cm2 Exposure Latitude - 17 % DoF - 150 nm LWR 4.5 nm 4.2 nm Exposures done on NXE:3350B with dipole Y illu
Slide 36: 20nm Contact Holes: less than 30mJ/cm2 dose with non-CAR resist
20nm Contact Holes: less than 30mJ/cm2 dose with non-CAR resist 20nm Regular New formulation contact holes non-CAR SEM image @BE/BF Dose 29.5 mJ/cm2 LCDU 3.8 nm Exposures done on NXE:3350 with Quasar45 illumination
Slide 37: Summary: EUV readying for volume manufacturing
Summary: EUV readying for volume manufacturing Public Slide 37 23 Feb 2016 • Completed qualification of five NXE:3350B, the 4th generation EUV exposure tool, one system qualified at 75 wph • Multiple systems demonstrated >1,000 wafers per day capability, with one system exceeding 1,350 wpd • 80W con