4ds Memory Ltd. · ASX:4DS
4ds Memory — Investor Presentation (July 2016)
25 slides from 4ds Memory's investor presentation, July 2016
Slide 1: Addressing the massive memory storage demands of tomorrow
Addressing the massive memory storage demands of tomorrow July 2016
Slide 2: Disclaimer and important notice
Disclaimer and important notice This presentation has been prepared by 4DS Memory Limited. (“4DS” or the “Company”) based on The information presented in this presentation is subject to change without notice and 4DS does not information available to it as at the date of this presentation. The inform
Slide 3: 4DS Memory
4DS Memory We are a Silicon Valley memory technology developer listed on the ASX We own 16 patents with over US$10m invested in development so far We make non-filamentary ReRAM for next generation gigabyte (GB) silicon storage We enable higher-density memory to operate cooler, faster and longer We h
Slide 4: Board and management team
Board and management team Global expertise founding and building high-tech companies Jim Dorrian Dr Guido Arnout Howard Digby David McAuliffe Michael Van Buskirk Melanie Buffier Chairman CEO & Non-Executive Non-Executive Chief Engineering Corporate Strategy Managing Director Director Director Office
Slide 5: Capital structure
10% Capital structure 8% 4% 4% 3% ASX Code 4DS 3% 63% Market capitalisation (fully diluted)1 $18.3 million 3% 2% Ordinary shares on issue2 659.2 million Performance shares3 67.6 million DIRECTORS & MANAGEMENT ABN AMRO CLEARING SYDNEY Unlisted options4 106.2 million KURT PFLUGER Top 20 Shareholders 5
Slide 6: 90% of the data in the world today was created in the last two years
90% of the data in the world today was created in the last two years I N V E S T O R P R E S E N TAT I O N / / J U LY 2 0 1 6 / / 6
Slide 7: Endless demand
Endless demand Every 24 hours... 1 million 250 billion video hours emails are sent are uploaded 700 million 1.3 billion tweets are posted photos are uploaded I N V E S T O R P R E S E N TAT I O N / / J U LY 2 0 1 6 / / 7
Slide 8: Silicon storage facts
Silicon storage facts Apple is the biggest Microsoft trialled an Data centre space will buyer of Flash in the underwater data grow to almost 200 world centre for 90 days to million square metres test its cooling in 2018 benefits Amazon Web Services Consumers spend over Household digital The world is
Slide 9: Flash, hard drives & solid state storage
Flash, hard drives & solid state storage • Flash dominates the • Hard disk drives (HDDs) • Data centres and cloud US$40 billion non volatile are a data storage device players are moving to the memory market used for storing and use of SSDs / silicon retrieving digital storage at exponential • Used i
Slide 10: Growing demand for non volatile memory
Growing demand for non volatile memory Internet of Things Mobile devices GB silicon storage I N V E S T O R P R E S E N T A T I O N / / J U L Y 2 0 1 6 / / 10
Slide 11: Flash cannot scale forever
Flash cannot scale forever • It’s time for a memory innovation for GB silicon storage • What is ReRAM? – resistive random access memory – non volatile: retains data when power is switched off – changes in material resistance works as the storage mechanism • Scalability and low currents are essential
Slide 12: The solution: 4DS ReRAM
The solution: 4DS ReRAM Why is 4DS ReRAM the solution? • Operates without filaments Mobile With higher density memory devicein line with cell size – allows the switching current to scale makers that runs cooler, faster, • Scales well to smaller geometries – well suited for GB storage required for mo
Slide 13: How 4DS fits into the GB silicon storage supply chain
How 4DS fits into the GB silicon storage supply chain Mobile Mobile products device makers 4DS Memory Data centres memory chip Consumer technology makers Cloud Silicon storage makers I N V E S T O R P R E S E N T A T I O N / / J U L Y 2 0 1 6 / / 13
Slide 14: Joint development agreement with HGST
Joint development agreement with HGST • HGST is a subsidiary of Western Digital Corporation, the leader in digital storage • Strategic player in emerging high growth technologies • Commenced in 2014 and renewed for the 2nd time in July 2016 • Goal is to optimise 4DS memory technology for the mobile
Slide 15: Development of viable ReRAM technology
Development of viable ReRAM technology Retention Behaviour Every time changes are made to the cell architecture, cell size, materials composition, material thickness or the fabrication Scalability process, 4DS has to re-confirm that the changes have the desired effects. Access Speed Endurance I N V
Slide 16: Development timeline
Development timeline Produced 50nm cells, Endurance testing Continue fabrication Demonstrate viability in line with 3D Flash refinements of 4DS ReRAM for GB production geometries Meet endurance silicon storage performance milestone Optimise endurance, Demonstrated access speed and Additional patents
Slide 17: Our strategy
Our strategy • Deliver higher density memory that operates with lower power consumption, increased reliability and improved performance • Develop and own all IP • Leverage strategic partnership with HGST • Focus on GB silicon storage for mobile and cloud • Demonstrate commercial viability and prove
Slide 18: ReRAM landscape and recent transactions
ReRAM landscape Company Exchange Market Cap Type Target Market Crossbar Private n/a1 Filamentary ReRAM Internet of Things, wearables, SSDs Weebit Nano / Radar Iron ASX A$60 million2 Filamentary ReRAM Internet of Things, wearables Adesto Technologies NASDAQ US$57 million Filamentary ReRAM Internet of
Slide 19: Summary
Summary • 4DS is developing a next generation non-filament based ReRAM memory solution which can store more data and can operate cooler, faster and longer compared to traditional storage memory • Unique, patented IP, wholly owned and developed in-house over the past 10 years • World-class team of me
Slide 20: Appendix
Appendix I N V E S T O R P R E S E N T A T I O N / / J U L Y 2 0 1 6 / / 20
Slide 21: Investment proposition
Investment proposition • Penetration of mobile devices, generation of digital • 4DS is developing breakthrough ReRAM technology for content, proliferation of cloud storage, the emergence next generation gigabyte (GB) storage in mobile and of the Internet of Things and the growth of connected cloud –
Slide 22: 2D Flash versus 3D Flash
2D Flash versus 3D Flash Flash currently dominates the US$40 billion GB silicon storage market 2D Flash 3D Flash • 16nm to 20nm cell size • 45nm to 50nm cell size • Limits are # of electrons • Limits are structural I N V E S T O R P R E S E N T A T I O N / / J U L Y 2 0 1 6 / / 22
Slide 23: Two approaches to ReRAM
Two approaches to ReRAM The 4DS memory cell uses no filament to switch therefore no scaling issues Filamentary ReRAM 4DS Non-filamentary ReRAM Switching currents High and don’t scale with cell size Low and scale with cell size On-off current ratios Must be high due to widely fluctuating currents Can
Slide 24: Why is 4DS ReRAM better placed?
Why is 4DS ReRAM better placed? 4DS ReRAM technology is non-filamentary therefore has no filamentary scaling issues 4DS MOHJO™ • Metal Oxide Hetero Junction – patented cell structure and operation • Oxygen exchange across hetero-junction • A voltage pulse reversibly changes resistance Top electrode
Slide 25: Corporate directory
Corporate directory 4DS Memory Limited Registered office US office ABN 43 145 590 110 Level 2, 50 Kings Park Road, 3155 Skyway Court West Perth WA 6005 Fremont CA 94539 ASX Code: 4DS AUSTRALIA UNITED STATES www.4dsmemory.com PO Box 271, info@4dsmemory.com West Perth WA 6872 AUSTRALIA +61 8 6377 8043