Asm International N.v. · EURONEXT:ASM

Asm International — EXANE BNP Paribas Tech Expert Access Event London (June 2013)

19 slides from Asm International's conference presentation, Jun 27, 2013

1. Slide 1: New Materials and Processes for Advanced Chip Manufacturing

   New Materials and Processes for Advanced Chip Manufacturing Bob Hollands Director Technical Marketing EXANE BNP Paribas Tech Expert Access Event London June 27, 2013 © 2013 ASM

2. Slide 2: Outline

   Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • Summary and Conclusions © 2013 ASM 2

3. Slide 3: Scaling will increasingly be enabled by New Materials and 3D Technologies

   Scaling will increasingly be enabled by New Materials and 3D Technologies Front-End Operations 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Scaling enabled by Materials IEDM 2002 Low-k Scaling enabled by 3D IEDM 2003 Strained Si Chipworks 2012 IEDM 2007 High-k FinFET 3D SIC 3D Me

4. Slide 4: Increasing Introduction Rate of New Materials

   Increasing Introduction Rate of New Materials Front-End Operations SiC LaO ZrO Hf(Si)O AlO BEOL Porous SiOC FEOL SOI Starting Mat’l SiGe TaO TaO SOP SOP SiOC SiOC Ta/TaN Ta/TaN Cu Cu SiOF SiOF TiSi CoSi NiSi Si(O)N Si(O)N Si(O)N Si(O)N TiW Ti/TiN Ti/TiN Ti/TiN WSi, MoSi WSi, PtSi W W (B)PSG (B)PSG (

5. Slide 5: New Materials and Processes: Moore's Law Enablers

   New Materials and Processes: Moore’s Law Enablers Front-End Operations Higher Capacitance, Lower Leakage Higher Mobility, Lower Resistance High-k and Metal Gates DRAM, RF, decoupling capacitors Strain and new Channel Materials New metal contacts Less Cross Talk, Faster Interconnect Smaller Feature S

6. Slide 6: ALD enables new materials and 3D

   ALD enables new materials and 3D Front-End Operations • New materials and 3D applications require more precise and controlled thin film deposition • Compared to conventional deposition techniques ALD offers superior: • Conformality • Step coverage • Interface control • The ALD market offers strong g

7. Slide 7: What is Atomic Layer Deposition (ALD)?

   What is Atomic Layer Deposition (ALD)? Front-End Operations Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Step 3: Reaction to Oxide/Nitride Step 4: Purge with O2, H2O, NH3 co-reactant and repeat… © 2013 ASM 7

8. Slide 8: Key strengths of ALD relative to conventional deposition

   Key strengths of ALD relative to conventional deposition Front-End Operations Uniformity Step Coverage Min TiN Max 29 nm SiO2 <1% 3σ <0.7% M-m SEM’s Courtesy of Philips Research Labs Interface Control Composition Control Ge 0 100 Atomically Excellent engineered 25 75 composition interfaces to contro

9. Slide 9: ASM's unique Materials Development Capabilities

   ASM’s unique Materials Development Capabilities Front-End Operations ASM Microchemistry (Fi) Pre-cursor Exploration Process Feasibility Basic Materials R&D N+≥3 Cooperative R&D Projects ASM Belgium Process Development Process Integration 15 – 7 nm N+2,3 Cooperative R&D Projects ASM Europe ASM Americ

10. Slide 10: Outline

    Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • Summary and Conclusions © 2013 ASM 10

11. Slide 11: Major Trends in Thin Film Deposition and ASM's Vision for ALD

    Major Trends in Thin Film Deposition and ASM’s Vision for ALD Front-End Operations Thin Film Needs: Integration Capabilities • New materials • Subtractive and • Thinner films Damascene patterning • Interface engineering • Etching • 3D conformality • Gap fills • Lower thermal budget • Clustering ALD

12. Slide 12: FinFET Challenges: ALD enables Further Scaling in 3D

    FinFET Challenges: ALD enables Further Scaling in 3D Front-End Operations IMEC, 2011 • Materials properties and channel length must be uniform over fin height • Conformal coverage required • Æ ALD technology has become critical for HK and MG layers © 2013 ASM 12

13. Slide 13: ASM Front-end Products: ALD

    ASM Front-end Products ALD Front-End Operations • Pulsar® XP • ALD for high-k • Cross-flow reactor • Solid source delivery system • EmerALD® XP • ALD for metal gates • Showerhead reactor Pulsar® XP EmerALD® XP © 2013 ASM 13

14. Slide 14: PEALD as an enabler of Lower Temperature Budget

    PEALD as an enabler of Lower Temperature Budget Front-End Operations LT SiO2 SiO2 SiN SiCN Deposition 50 oC 260 oC 360 oC 360 oC Temperature SDDP (LT) Low WER Application FEOL SDDP Gate spacer Gate spacer Gate spacer Low temperature deposition of SiO2 and Si3N4 opens up wide potential application sp

15. Slide 15: New Materials enabling Lithography: Spacer Defined Double Patterning

    New Materials enabling Lithography Spacer Defined Double Patterning Front-End Operations Litho-formed Resist Pattern Depo of SiO2 at 50C Spacer Thickness NU <1%, 3σ 44nm Pitch Left Conformal SiO2 Resist Uniform CD’s: Anisotropic Etch Center Right 22nm ASM, ALD conference 2008; SPIE Pitch/2 conferenc

16. Slide 16: ASM Front-end Products: PEALD and PECVD

    ASM Front-end Products PEALD and PECVD Front-End Operations • XP8 RC4 RC5 • High productivity single wafer tool for RC3 RC6 both PEALD and PECVD applications • Accommodates up to 8 chambers for RC2 RC7 PEALD or PECVD RC1 RC8 • PEALD and PECVD can be integrated on the same platform © 2013 ASM 16

17. Slide 17: Outline

    Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • Summary and Conclusions © 2013 ASM 17

18. Slide 18: Summary

    Summary Front-End Operations • Scaling is increasingly enabled by new materials and 3D technologies • ALD enables new materials and 3D • The ALD market offers strong growth opportunities • Adoption of more ALD and PEALD applications in HVM continues • ASMI #1 position in ALD for High-k gate • 3D Fin

19. Slide 19: Drive Innovation, Deliver Excellence

    Drive Innovation, Deliver Excellence © 2013 ASM

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