Slide 1: UBS Technology Conference 2012
UBS Technology Conference 2012 London Franki D’Hoore, Director Investor Relations March 8, 2012 Exhibit 99.2
Slide 2: Safe Harbor
Safe Harbor "Safe Harbor" Statement under the US Private Securities Litigation Reform Act of 1995: the matters discussed in this document may include forward-looking statements, including statements made about our outlook, realization of systems backlog, IC unit demand, financial results, average se
Slide 3: Agenda
Agenda • Business summary • Outlook • ASML technology strategy
Slide 4: Business summary
Business summary
Slide 5: Total net sales M€
629 949 919 183 742 1,452 942 930 844 277 1,069 1,529 958 934 697 555 1,176 1,459 1,053 955 494 581 1,521 1,211 Total net sales M€ 3,582 3,768 Numbers have been rounded for readers’ convenience. 2,954 1,596 4,508 5,651 1,000 2,000 3,000 4,000 5,000 6,000 2006 2007 2008 2009 2010 2011 Q4 Q3 Q2 Q1
Slide 6: Key financial trends 2010 – 2011
Key financial trends 2010 – 2011 Consolidated statements of operations M€ Q4 10 Q1 11 Q2 11 Q3 11 Q4 11 Net Sales 1,521 1,452 1,529 1,459 1,211 Gross profit Gross margin % 45.0% 44.7% 45.1% 42.1% 41.0% R&D costs SG&A costs Income from operations Operating income % 32.4% 31.0% 32.3% 27.9% 23.9% Net i
Slide 7: Backlog in value per Dec 31, 2011
Backlog in value per Dec 31, 2011 Total value M€ 1,733 Region (ship to location) Numbers have been rounded for readers’ convenience. Technology ArF immersion 64% KrF 29% I-Line 2% ArF dry 5% End-use DRAM 11% IDM 23% Foundry 50% NAND 16% • 75% of backlog carry shipment dates in the next 6 months USA
Slide 8: Cash return to shareholders
Cash return to shareholders • ASML proposes to increase dividend by 15% to € 0.46 per ordinary share • ASML increases the existing 1 billion share buyback program to € 1,130 million enabling maximum use of available withholding tax-exempt allowance in 2012 • In 2012 ASML also intends to purchase up
Slide 9: Repurchased more than million shares since 2006
• Repurchased more than 143 million shares since 2006 representing approx. 30% of outstanding shares Cumulative Cash Return 2006-2011 2006 1000 1500 2000 2500 3000 3500 2007 2008 2009 2010 2011 Dividend Share buy back ASML has returned nearly € 3.3 billion cash in the past 6 years
Slide 10: Outlook Q1 2012
Outlook Q1 2011
Slide 11: Q1 Outlook
Q1 Outlook • Net sales around € 1.2 billion • Bookings expected above Q4 2011 level (was € 710 million) • Gross margin about 43% • R&D costs at € 145 million • SG&A costs at € 54 million ASML expects H1 2012 net sales of about € 2.4 billion
Slide 12: ASML technology strategy
ASML technology strategy
Slide 13: Dual product development strategy continues
Dual product development strategy continues Evolving high productivity NXT platform optimized for multi pass patterning processes Preparing EUV platform for volume manufacturing of critical layers Concurrent development programs to enhance imaging, overlay, productivity and process control on both p
Slide 14: Q4 immersion platform highlights
Q4 immersion platform highlights • Recognized 101 immersion tools in 2011 of which 78 were TWINSCAN NXT:1950i, our most advanced production systems • Overlay accuracy of NXT:1950i improved by 30% on product wafers • Multiple NXT:1950i systems printed more than 4000 wafers in a single day in customer
Slide 15: EUV has arrived worldwide in Fabs
System 6: Exposing wafers for system qualification EUV has arrived worldwide in Fabs System 5: Exposing wafers for device development System 2 Exposing wafers for device development System 4: Exposing wafers for device development System 3: Exposing wafers for device development System 1 Exposing wa
Slide 16: Customer roadmaps indicate shrinks to <10nm node
Slide 16 | Customer roadmaps indicate shrinks to <10nm node BICS SONOS) Bit Line Source SG WL BICS SONOS) Bit Line Source SG WL FG STI FG CG ONO or High-k FG STI FG CG ONO or High-k Source: ASML & IMEC 2011 - 2012 2013 - 2014 2015 - 2016 2017 - 2018 22 - 20nm Memory: 0.08um2, SRAM Device: planar or
Slide 17: ASML roadmaps support shrink to <10nm with ArF immersion and EUV
Slide 17 | ASML roadmaps support shrink to <10nm with ArF immersion and EUV EUV insertion will vary by sector Source: ASML & IMEC, 2011 2011 - 2012 2013 - 2014 2015 - 2016 2017 - 2018 22 - 20nm 16 - 14nm 11 - 10nm 8 - 7nm 38 - 32nm 27 - 22nm 22 - 16nm 16 - 14nm 24 - 19nm hp 16 - 14nm hp 13 - 11nm hp
Slide 18: EUV introduction by customers will be gradual
EUV introduction by customers will be gradual • The low 2x nm technology nodes might introduce EUV for critical layers • Timeline 2013 - 2014 • The mid 1x nm technology nodes will introduce EUV for critical layers • Timeline 2015 and beyond • Immersion will continue to be used for critical layer ima
Slide 19: ASML Immersion Product Roadmap
Slide 19 | ASML Immersion Product Roadmap NXT:1950i provides performance extendibility until EUV adoption TWINSCAN NXT Extendibility Upgradeability * OPO 5nm Matched, 4nm Dedicated Chuck 2011 Extensions 2012 Extensions 2013+ Matched Machine Overlay 5.5nm 4.5nm 3.5nm On Product Overlay 9nm 6nm 4nm *
Slide 20: Shrink drives more exposures and greater litho system requirements
ArFi KrF KrF I-Line KrF KrF KrF KrF ArFi ArFi ArFi ArFi ArFi ArFi KrF KrF ArFi KrF ArFi KrF ArFi I-Line ArF ArF ArFi KrF KrF I-Line KrF KrF KrF KrF ArFi ArFi ArFi ArFi ArFi ArFi KrF KrF ArFi KrF ArFi KrF ArFi KrF I-Line ArF ArF ArF ArFi ArFi ArFi ArFi ArFi ArFi ArFi ArFi ArFi Slide 20 | Shrink drive
Slide 21: EUV simplifies process (and reduces cost)
Double Spacer Single Spacer EUV Litho Etch Litho Etch LELE relative to EUV Process steps x2 Cycle time x2 Additional costs < 10% DPT relative to EUV Process steps x4 Cycle time x4 Additional costs 30-50% QPT relative to EUV Process steps > x5 Cycle time > x5 Additional costs > 50% Slide 21 | EUV sim
Slide 22: NXE technology roadmap has great extendibility
0.25 0.33 DPT with 0.33NA at 13.5 nm 0.45 0.60 0.45-0.60 =0.5 =0.8 =0.2-0.9 Flex-OAI Extended Flex-OAI reduced pupil fill ratio TIME 13.5 6.8 Slide 22 | NXE technology roadmap has great extendibility first illumination optimization, then NA increase wavelength [nm] NA coherence On site / in integrat
Slide 23: NXE:3100 imaging performance proven for various customer applications
Slide 23 | NXE:3100 imaging performance proven for various customer applications 16nm dense lines Flash staggered contact layer Bitline pitch = 44 nm (1:1.2) CH pitch = 74.4 nm 30 nm Brickwall DRAM Sub 16 nm node SRAM Contact Hole 0.038µm2 bit cell-size, hp 30/32 nm Sub 16 nm node SRAM metal-1 0.038
Slide 24: The NXE:3100 has exposed more than 5,300 wafers
Slide 24 | The NXE:3100 has exposed more than 5,300 wafers …and is enabling device development at customer sites
Slide 25: Building for volume production: new cleanroom cabins available
Two cabins finished (Jan.12) Slide 25 | Existing EUV offices & manufacturing, 8 cabins. New EUV offices & manufacturing,15 cabins. Building for volume production: new cleanroom cabins available New EUV factory at ASML for ~3x capacity increase
Slide 26: Summary and conclusions: EUV….here to stay
Slide 26 | Summary and conclusions: EUV….here to stay Imaging and Overlay performance of NXE: 3100 platform is good, and supports current customer device and process development for 2xnm node NXE:3300B scheduled to ship to customers later this year EUV delivers: Single exposure shrink, fewer design
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