Sitime Corporation · NASDAQ:SITM

Sitime — Technical Presentation (February 2012)

74 slides from Sitime's technical presentation, Feb 19, 2012

  1. Slide 1: Getting In Touch with MEMS: The Electromechanical Interface

    ISSCC 2012 Tutorial Getting In Touch with MEMS: The Electromechanical Interface Dr. Aaron Partridge ap@sitime.com SiTime, Corp. February 19, 2012

  2. Slide 2: Overview

    Overview These slides accompany the 2012 ISSCC Tutorial, Getting In Touch with MEMS: The Electromechanical Interface. The tutorial is written for practicing IC engineers and students. No MEMS background is needed. The goal is to expand the attendee’ s potential role from circuit designer to system d

  3. Slide 3: Outline

    Outline o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 3 of 70 The Electromechanical Interface

  4. Slide 4: Outline: MEMS Materials, Processes, and Applications

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 4 of 70 The Electromechanical Interface

  5. Slide 5: Materials

    Materials o Standard Semiconductor Materials n Silicon (single crystal and poly). n Oxide (thermal and deposited). n Nitride. n Aluminum. o Unusual Materials n Gold, various other metals. n Piezoelectrics (AlN mostly). n Plastics (e.g. SU-8). n And then just about anything else. Aaron Partridge Gett

  6. Slide 6: Processes

    Processes o Early in MEMS many unusual etches were common. o Now standard fab process are preferred when possible. o A few special processes Tuning fork resonator, Bosch 2003 n Bosch etch. n HF vapor etch. n Oxide plasma release. n Xenon difluoride (XeF2) release. o Deep etches are common. S. Pourka

  7. Slide 7: Example Applications

    Example Applications o MEMS will find its way into practically every application. o Right now, it is strong in n Automotive (pressure, acceleration, rotation). n Consumer (acceleration, rotation, time). n Industrial and Military (pressure, acceleration). n Medicinal (pressure, biological sensors). o

  8. Slide 8: Pressure Sensors

    Pressure Sensors Sensimed intraocular pressure sensor in contact lens Aaron Partridge Getting In Touch with MEMS: 8 of 70 The Electromechanical Interface

  9. Slide 9: Accelerometers & Gyroscopes

    Accelerometers & Gyroscopes Freescale accelerometer Aaron Partridge Getting In Touch with MEMS: 9 of 70 The Electromechanical Interface

  10. Slide 10: Microphones

    Microphones Akustica microphone Aaron Partridge Getting In Touch with MEMS: 10 of 70 The Electromechanical Interface

  11. Slide 11: Light Modulators & Projectors

    Light Modulators & Projectors Two pixels in a TI DLP mirror array Aaron Partridge Getting In Touch with MEMS: 11 of 70 The Electromechanical Interface

  12. Slide 12: Resonators & Oscillators

    Resonators & Oscillators SiTime oscillator Aaron Partridge Getting In Touch with MEMS: 12 of 70 The Electromechanical Interface

  13. Slide 13: RF Switches

    RF Switches G. Rebeiz UCSD, RF switch Aaron Partridge Getting In Touch with MEMS: 13 of 70 The Electromechanical Interface

  14. Slide 14: Outline: Electrical Interfaces

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 14 of 70 The Electromechanical Interface

  15. Slide 15: Capacitive Overview

    Capacitive Overview o Capacitive transduction is used in 90% of MEMS interfaces. o Good Points: n Easy to build, no need for special materials. n With the Bosch etch we can make beautiful cap structures. n Can move small to large distances. n Can move in-plane and out-of-plane. n Can sense tiny disp

  16. Slide 16: Capacitive Drive

    Capacitive Drive o How does capacitive drive work? Take a parallel plate example: g ε c wh 2 F= 2 V 2g w o Were F=force, 0=permittivity, w=width, h=height, g=capacitive gap, V=voltage. F h o The voltage squared gives attractive forces and drive nonlinearity. V o The gap squared gives displacement no

  17. Slide 17: Capacitive Drive

    Capacitive Drive o Want bipolar force? g o We can offset the attraction (pull more and pull less) with DC bias and AC drive. w ε c wh F= (Vbias + Vdrive ) 2 2g 2 o Set Vbias >> Vdrive and we get a F h bipolar offset drive. ε c wh Foffset ≈ 2 VbiasVdrive g o As bias is increased and drive is Vbias+Vd

  18. Slide 18: Capacitive Drive

    Capacitive Drive o Second option for bipolar is differential (pull one way, g g pull the other), ε c wh 2 Fdif = 2g 2 (Vleft − Vright ) 2 w o Offset and differential can be combined, Fdif h ε c wh Fdif ≈ 2 Vbias (Vright − Vleft ) g o Typical bias and drive are 5V and 0.5V. Vleft Vright Aaron Partrid

  19. Slide 19: Capacitive Drive

    Capacitive Drive o Interdigitated fingers g (combs) can move further and are more linear. p ε ch 2 Fdif = N V g Fc o N is the number of fingers. h o Since p does not effect Fc it is linear in displacement. o Pairs of fingers can be V V used differentially to linearize V and push-pull. Aaron Partridg

  20. Slide 20: Capacitive Sense

    Capacitive Sense o For capacitive sensing, we cap C need to think about charge, Q = CV , i = dQ / dt o We all learned that, i = C ( dV / dt ) o But for MEMS sensing we sometimes care more about, i = Vdc (dC / dt ) i o And we use a bias Vdc, often Any structures with dC/dx about 5V but can be 100’ s!

  21. Slide 21: Capacitive Sense

    Capacitive Sense o What you will need to do as an engineer n Because capacitances are small, sense currents are small. n Design the lowest noise sense amps possible. n If noise is not critical then shrink the MEMS. n Always push the circuits, always simplify the MEMS. o Drive Circuits n For AC syste

  22. Slide 22: Capacitive Sense

    Capacitive Sense sensor diff osc A OUT phase trim o Differential lock-in sense amp for accelerometers. Aaron Partridge Getting In Touch with MEMS: 22 of 70 The Electromechanical Interface

  23. Slide 23: M. Dugger, Sandia Labs

    Aaron Partridge Getting In Touch with MEMS: 23 of 70 The Electromechanical Interface M. Dugger, Sandia Labs

  24. Slide 24: Piezoresistive Overview

    Piezoresistive Overview o Transduces strain to resistance. o One of the earliest MEMS interfaces and still important. o Good points: n There is mechanical gain, typically about 30x. n The common sensor structure is a Wheatstone bridge. n Silicon-friendly fabrication, doped resistors work well. o Bad

  25. Slide 25: Piezoresistive Sense

    Piezoresistive Sense o A simple idea with may coefficients –strain changes resistivity. R ∆ρω 6 = ∑ π ωλσ λ ρ λ =1 o =change in resistivity, are piezo coefficients, are stress. The form a sparse 6x6 matrix. o For specific cases the equation can be simplified to, ∆R = π effectiveσ axial R Aaron Partr

  26. Slide 26: Piezoresistive Sense

    Piezoresistive Sense o Typical sense circuits are bridges. n This minimizes the temperature sensitivity that can swamp signals. n Input offset often vital –use switched caps, diversity, etc. n Often must minimize 1/f noise –use switched topologies. n Temperature compensation of offset and gain varia

  27. Slide 27: Piezoresistive Sense

    Piezoresistive Sense Vbias offset gain OUT A trim trim OUT temp sense sensor o Bridge amp with temperature offset and gain correction Aaron Partridge Getting In Touch with MEMS: 27 of 70 The Electromechanical Interface

  28. Slide 28: A. Partridge, Stanford

    Aaron Partridge Getting In Touch with MEMS: 28 of 70 The Electromechanical Interface A. Partridge, Stanford

  29. Slide 29: Piezoelectric Overview

    Piezoelectric Overview o Transduces force to voltage. o Aluminum Nitride (AlN) is the most common material. o Good points: n Moderately easy to fabricate, available in MEMS foundries. n Can provide low impedance and tremendous power handing for RF. n Works well at high frequencies. o Bad points: n D

  30. Slide 30: Piezoelectric Drive and Sense

    Piezoelectric Drive and Sense o For sense and drive, think in t terms of S21 and S12. o In the simplest form, w t V =d F F ewh h o Where t=thickness, e=dielectric permittivity, and d-bar is the piezoelectric charge coefficient (a function of material and orientation). V Aaron Partridge Getting In To

  31. Slide 31: G. Vigevani, UC Berkeley

    Aaron Partridge Getting In Touch with MEMS: 31 of 70 The Electromechanical Interface G. Vigevani, UC Berkeley

  32. Slide 32: Other Transducers

    Other Transducers o Thermal sensors, particularly thermistors, are often used for IR imaging bolometers. o Chemical sensors of all kinds are used in biology. o There are lots of optical transducers, and this is an important area for displays. Optical forces can even be used to drive MEMS, but that i

  33. Slide 33: Remember This:

    Remember This: You will usually need to design the lowest noise circuits possible. If the MEMS is producing extra signal then it should be simplified. Aaron Partridge Getting In Touch with MEMS: 33 of 70 The Electromechanical Interface

  34. Slide 34: Outline: Scaling Laws

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 34 of 70 The Electromechanical Interface

  35. Slide 35: Scaling Laws

    Scaling Laws o Most things scale against us, not for us. o Mechanical structures n Volume and mass: x3 (simple) n Mechanical stiffness: x (extensional) n Resonant frequency: 1/x (extensional) o Transducers n Piezoresistance: (no scale) n Capacitance: x (voltage to force) n Piezoelectrics: x (voltage

  36. Slide 36: Why Does Scaling Matter?

    Why Does Scaling Matter? o Most MEMS things get worse when made smaller n Mass goes down cubically, so inertial sensing gets tougher. n Capacitive and piezoelectric transducers get worse linearly. n Magnetic transducers scale terribly. o A few things get better n Circuits can be mounted closer, so C

  37. Slide 37: Remember This:

    Remember This: Know how your system scales and leverage things that work for you and not against you. Aaron Partridge Getting In Touch with MEMS: 37 of 70 The Electromechanical Interface

  38. Slide 38: Outline: Packaging is Critical

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 38 of 70 The Electromechanical Interface

  39. Slide 39: Packaging is Critical

    Packaging is Critical o In circuits we don’ t think about packaging, except for n Size. n Lead inductance and resistance. n Heat dissipation. o In MEMS, packaging is the single most important thing after the transducer selection n How do we protect the parts in operation? n How do we handle the part

  40. Slide 40: Back-end Packaging

    Back-end Packaging o Sometimes just put the MEMS and CMOS into a package. o Don’ t touch it! o Production complications n How to dice? n How to pick & place? n Need a clean room? o For some apps, like chemical detectors, it can work well. ADI ADXL-50 circa 1995 Aaron Partridge Getting In Touch with

  41. Slide 41: Bonded Covers

    Bonded Covers o Wafer bonded covers protect the MEMS elements n Can use frit glass to glue the wafers together. n These covers can take 80% of the die area. n Building the covers can be expensive. o Much less expensive then Bosch Gyroscope circa 1999 handling naked MEMS wafers. o The dominant techno

  42. Slide 42: Deposited Thin Film Covers

    Deposited Thin Film Covers o Save space by depositing rather than bonding covers. o Harder than it looks n How to empty it out inside? n Thermal mismatches. n Contamination. B.H. Stark, JMEMS 2004 n Need strength for plastic. n Limits MEMS designs. o Development is expensive n Only makes sense for h

  43. Slide 43: Deposited Encapsulation Example

    Deposited Encapsulation Example SiTime Resonator o SiTime (my company) buries resonators under the wafer surface. Aaron Partridge Getting In Touch with MEMS: 43 of 70 The Electromechanical Interface

  44. Slide 44: Stacked Die in Plastic

    Stacked Die in Plastic o When the MEMS is covered or encapsulated n It can be diced like a CMOS wafer. n Pick-place, wire bond, mold, etc, all normal. o A low cost option when it works for the app. o Applications like optical switches can’ t use this. SiTime Oscillator Construction Aaron Partridge G

  45. Slide 45: Remember This:

    Remember This: Design from the outside to the inside, and do the packaging first. Aaron Partridge Getting In Touch with MEMS: 45 of 70 The Electromechanical Interface

  46. Slide 46: Outline: CMOS Integration

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 46 of 70 The Electromechanical Interface

  47. Slide 47: Homogeneous Integration

    Homogeneous Integration o Only three ways n MEMS on CMOS. n MEMS in CMOS. n MEMS under CMOS. o Usually not the best approach n Do you have the time and money? n Do you feel lucky? o Just a few of the problems… n The MEMS process can change the CMOS behavior. n The CMOS process may need to be adjuste

  48. Slide 48: Homogeneous Example

    Homogeneous Example 3-Axis Accelerometer, Sandia Aaron Partridge Getting In Touch with MEMS: 48 of 70 The Electromechanical Interface

  49. Slide 49: Heterogeneous Integration

    Heterogeneous Integration o Usually a better approach n Build the MEMS and CMOS die into one package. n Can be wire bonded or bump bonded. n Requires the MEMS be pre-covered for most apps. o Usually cheaper, faster, and more versatile n MEMS+CMOS can be developed in parallel. n Fewer material and te

  50. Slide 50: Heterogeneous Example

    Heterogeneous Example Oscillator, SiTime Aaron Partridge Getting In Touch with MEMS: 50 of 70 The Electromechanical Interface

  51. Slide 51: Wafer-scale Integration

    Wafer-scale Integration o MEMS wafer bonded to CMOS wafer n The wafers are bonded face-face at the MEMS fab. n Various proprietary metallurgies at MEMS fabs. n Common are gold compression and eutectics. o Has some good points n Electrically close –low capacitance. n Many interconnects possible. n Us

  52. Slide 52: Wafer-scale Example

    Wafer-scale Example MEMS Wafer Circuits Wafer Rich Ruby, Avago, IFCS 2011 Aaron Partridge Getting In Touch with MEMS: 52 of 70 The Electromechanical Interface

  53. Slide 53: Remember This:

    Remember This: Never integrate MEMS on, in, or under CMOS without a very compelling reason. Aaron Partridge Getting In Touch with MEMS: 53 of 70 The Electromechanical Interface

  54. Slide 54: Outline: How to Succeed

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 54 of 70 The Electromechanical Interface

  55. Slide 55: Problems to Manage

    Problems to Manage o You will need to build something early n The MEMS components will not be finished when you start your IC design. n You will not have solid data for your analysis. n If prototypes have been tested, the new parts (the real parts!) will be different. n When the MEMS is tested it wi

  56. Slide 56: Problems to Manage

    Problems to Manage o Specs will change in the middle of development n There are three, maybe four things in flux. n Circuits, MEMS design, MEMS process, and software. n On the applications side, marketing and sales learn too. n Rates of flux are higher than you may be used to. o To improve the chanc

  57. Slide 57: Important Points

    Important Points o Be sure you have a MEMS expert on the team n Hire one or consult with one, but get one. n Amateurs who think they are smart enough are wrong. o Understand the application drivers n How does the scaling work? n Does it require integration? o Consider the packaging carefully n Desig

  58. Slide 58: Important Points

    Important Points o Build flexibility in your IC n The MEMS will not work as expected, so roll with it. n The MEMS will be improved later, and the earlier IC should support that. o Insist on many small learning cycles n Use test chips to prove out the concepts. n Don’t go into product design too earl

  59. Slide 59: Aaron's Complexity Paradox

    Aaron’ s Complexity Paradox o The “Simple”solutions Easy are difficult. Software o The “Complex”solutions Firmware are easy. Microcode Complex Simple o Move toward easy Digital solutions whenever possible, this means Analog increasing complexity. Device o Embrace complexity to Material succeed. Diff

  60. Slide 60: Aaron's Complexity Paradox

    Aaron’ s Complexity Paradox o For system designers this means n Push the problem out of MEMS whenever possible. n Don’t ever make the MEMS designers do something that one can possibly do elsewhere. o For IC designers this means n You will be (or should be!) asked to push your circuits to the limit t

  61. Slide 61: Complexity Management Example

    Complexity Management Example o MEMS oscillator researchers (including me!) tried to build frequency-accurate temperature-flat resonators. n That didn’ t work. o Then my colleagues and I moved the complexity into CMOS and managed the frequency with frac-N PLLs. n That worked! o Then all sorts of gre

  62. Slide 62: Complexity Management Example

    Complexity Management Example o SiTime Architecture. MEMS Resonator o Will step through this block by block. CMOS Oscillator Prog Configuration Sustaining OE I/O Regs Vcc PROM Amp /ST Temperature Frequency Frac-N GND Drive Clk Sensor Control PLL Aaron Partridge Getting In Touch with MEMS: 62 of 70 T

  63. Slide 63: Choose the Right Products

    Choose the Right Products o Must have a Starving Market. (Kurt Petersen) o Must have an Unfair Advantage. (Arno Penzias) o Why discuss this in a circuits tutorial? n Because we engineers and scientists can almost always make our stuff work. n But failure happens when people don’ t want our stuff. n

  64. Slide 64: Remember This:

    Remember This: We are valued not by what we do, but by what we do that makes a difference. Aaron Partridge Getting In Touch with MEMS: 64 of 70 The Electromechanical Interface

  65. Slide 65: Your Work Does Make a Difference

    Your Work Does Make a Difference o Technology has fundamentally helped Humanity. o Engineers make small contributions that are multiplied countless times. o What you do matters to Billions of people! Dorothea Lang, “ Migrant Mother”1936 Aaron Partridge Getting In Touch with MEMS: 65 of 70 The Electr

  66. Slide 66: Thank You! Questions?

    Thank You! Questions? Aaron Partridge Getting In Touch with MEMS: 66 of 70 The Electromechanical Interface

  67. Slide 67: Outline: References

    o MEMS Materials, Processes, and Example Applications o Electrical Interfaces o Scaling Laws o Packaging is Critical o CMOS Integration o How to Succeed o References Aaron Partridge Getting In Touch with MEMS: 67 of 70 The Electromechanical Interface

  68. Slide 68: References

    References o A complete background to MEMS and thorough basic references n Gregory Kovacs, “ Micromachined Transducers Sourcebook” , McGraw- Hill Science/Engineering/Math, ISBN 0-0729-0722-3 , 1998. o A good general introduction of scaling and technology options n Marc Madou, “ Fundamentals of Micro

  69. Slide 69: References

    References o A solid theoretical underpinning of common MEMS devices n Ville Kaajakari, “Practical MEMS: Design of microsystems, accelerometers, gyroscopes, RF MEMS, optical MEMS, and microfluidic systems” , Small Gear Publishing, 098-2299109, 2009. o The primary conference proceedings and journals

  70. Slide 70: Additional References

    Additional References Capacitive transduction o W.C. Tang, T-C.H. Nguyen, M.W. Judy, R.T. Howe, “ Electrostatic-Comb Drive of Lateral Polysilicon Resonators” , Sensors and Actuators A: Physical, v.21, pp.328- 331, 1990. o A. Selvakumar, K. Najafi, “Vertical Comb Array Microactuators” , J. Microelect

  71. Slide 71: Additional References

    Additional References o F.N. Hooge “ 1/f Noise Sources,”IEEE Transactions of Electron Devices, v.41, n.11, pp.1926-1935, 1994. o J.A. Harley, T.W. Kenny, “ 1/F Noise Considerations for the Design and Process Optimization of Piezoresistive Cantilevers”, J. Microelectromechanical Systems, v.9, pp.226-

  72. Slide 72: Additional References

    Additional References Examples of less common drive and sense technologies o C.H. Liu, A.M. Barzilai, J.K. Reynolds, A. Partridge, T.W. Kenny, J.D. Grade, H.K. Rockstad, “ Characterization of a High-Sensitivity Micromachined Tunneling Accelerometer with Micro-g Resolution,”IEEE Journal of Microelect

  73. Slide 73: Additional References

    Additional References MEMS wafer-level packaging o Y.T. Cheng, L. Lin, and K. Najafi, "Localized Bonding with PSG or Indium Solder as Intermediate Layer," Twelfth IEEE International Conference on Micro Electro Mechanical Systems, pp. 285-289, 1999. o C.H. Tsau, S.M. Spearing, and M.A. Schmidt, "Fabr

  74. Slide 74: End

    End Aaron Partridge Getting In Touch with MEMS: 74 of 70 The Electromechanical Interface

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