Applied Materials, Inc. · NASDAQ:AMAT
Applied Materials — SPIE Advanced Lithography + Patterning Conference 2024
21 slides from Applied Materials's conference presentation, Feb 26, 2024
Slide 1: Patterning in the Angstrom Era
PATTERNING IN THE ANGSTROM ERA Applied Materials News at the SPIE Advanced Lithography + Patterning Conference February 26, 2024
Slide 2: By Equipment Type, Device Type, Application
2 | Applied External By Equipment Type | By Device Type Leading-Edge Foundry-Logic ICAPS + Specialty By Application Interconnect Formation Advanced Packaging
Slide 3: Applied Materials Patterning Served Markets and Share
Applied Materials Patterning Served Markets and Share Industry’s Broadest Portfolio SAM Share ALD ~30% ~$8B CMP CVD Etch Metrology ~10% ~$1.5B 40% Pattern Shaping 38% 2013 36% 2023 Selective Materials Removal Thermal * Patterning SAM and share includes Foundry/Logic and DRAM, excludes NAND Applied’s
Slide 4: Takeaway Messages
Takeaway Messages Gaining strong customer momentum with Sculpta™ ▪ Applied is working with all leading-edge logic chipmakers on a growing number of applications Introducing new technologies for “angstrom era” patterning ▪ Sym3™ Y Magnum™ etch heals EUV line edge roughness ▪ Pioneer™ CVD patterning f
Slide 5: Angstrom Era Patterning Challenges
Angstrom Era Patterning Challenges Tip-to-Tip Spacing Stochastics Thinner Resist pitch open tip-to-tip short Double Patterning Pattern Fidelity EUV litho-etch 1 CVD films EUV litho-etch 2 5 | Applied Materials External
Slide 6: Process Innovations for the Patterning Engineer's Toolkit
Process Innovations for the Patterning Engineer’s Toolkit Dep Litho Pioneer™ Photomask Logic Generation EDA Design Pioneer™ Process Design Aselta Contour-Based Metrology from VeritySEM™ and PROVision™ Etch Pattern Etch Sym3™ Y Magnum™ Shaping Sym3™ Y Magnum™ Sculpta™ Source: Applied Materials 6 | Ap
Slide 7: Centura Sculpta Pattern-Shaping System
Centura™ Sculpta™ Pattern-Shaping System A breakthrough innovation for the patterning engineer’s toolkit ✓ Enhances EUV patterns to optimize chip area, reduce cost and increase yield ✓ Reduces patterning complexity and defects ✓ Reduces the environmental impact of advanced chipmaking by saving energ
Slide 8: Breakthrough Innovation for the Patterning Engineer's Toolkit
Breakthrough Innovation for the Patterning Engineer’s Toolkit Press Release “ Pattern shaping is an innovative solution that is helping Intel accelerate its process technology roadmap. We are deploying Sculpta systems for our angstrom process nodes, with initial results showing improved throughput,
Slide 9: Breakthrough Innovation for the Patterning Engineer's Toolkit
Breakthrough Innovation for the Patterning Engineer’s Toolkit Press Release “ Pattern shaping is a breakthrough technology that addresses key challenges in the EUV era. Samsung is an early development partner and is evaluating the Sculpta systems for our 4nm process. We are looking forward to positi
Slide 10: Sculpta Pattern-Shaping Applications
Sculpta™ Pattern-Shaping Applications Customer Customer Application Type Benefits Nodes/Layers Engagements Cost EUV double lead application Complexity 2nm and below: patterning step at multiple Environmental contact, M1, M0 reduction customers Impact Tip-to-Tip Reduction Si area utilization 2nm: V0
Slide 11: Producer XP Pioneer Advanced Patterning CVD Film
Producer™ XP Pioneer™ Advanced Patterning CVD Film Pioneer High-Density Carbon Hardmask ▪ Temperature-controlled deposition for increased etch selectivity ▪ Directional ionization for increased density and modulus Diamond Pioneer vs Film Property Conventional EUV Litho Stack Modulus (GPa) Photoresis
Slide 12: Co-optimizing Sculpta and Pioneer for EUV Patterns
Co-optimizing Sculpta™ and Pioneer™ for EUV Patterns Pattern shaping is limited by hardmask erosion Pattern-Shaping 1.4nm Conventional Node Pioneer Performance Target Carbon pattern-shaping beam tip-to-tip shrink (nm) Pioneer erosion ~ beam hardmask >10 13.0 13.1 push layer elongation ~ beam under l
Slide 13: Centris Sym3 Y Magnum Etch
Centris™ Sym3™ Y Magnum™ Etch Rough EUV Single-chamber etch + dep technique Improved photoresist improves EUV photoresist patterns patterns CDU13Improvement | Applied External ▪ Alternate between deposition and etch in the same chamber 21% ▪ New multi-state pulsing improves control >20% of photoresi
Slide 14: Sym3 Y Magnum Heals Stochastic Errors
Sym3™ Y Magnum™ Heals Stochastic Errors EUV creates stochastics … Sym3 Y Magnum has fine ion angle and ion- to-radical ratio control to remove residue and Incoming photoresist optimally shape photoresist ions ions Notches radicals indentations radicals Residue between lines causes “bridges” (due to
Slide 15: Co-optimizing Pioneer and Sym3 Y Magnum for DRAM
Co-optimizing Pioneer™ and Sym3™ Y Magnum™ for DRAM Need taller conventional hardmask when scaling Higher selectivity with thinner Pioneer hardmask and Sym3 Y Magnum ion control Sym3 Y Etch Selectivity to Si Mask Magnum ions ~2x + conventional hard mask + + = Wordline Pioneer Conventional Pioneer +
Slide 16: Pioneer and Sym3 Y Magnum Business Momentum
Pioneer™ and Sym3™ Y Magnum™ Business Momentum Strong customer pull for new deposition and etch products ✓ Development and production tool of record positions at leading foundry- logic and memory customers ✓ Both products on track to generate hundreds of millions in annual revenue in coming years Pr
Slide 17: Introducing Contours for EUV
Introducing Contours for EUV Design SEM Imaging Contour Extraction Contours vs Design Intended pattern EUV-optimized image High-quality contours of Comparison of intended and actual pattern from low- actual patterns contrast image Source: Applied Materials Robust contours enable the accurate metrolo
Slide 18: Integrating Aselta Contour-Based Metrology
Integrating Aselta Contour-Based Metrology Integration of contour metrology on eBeam patterning control platforms VeritySEM™ PROVision™ CD Metrology EPE Metrology Accelerating design and time-to-yield with robust contours 18 | Applied Materials External
Slide 19: Multiple Applications for Aselta Contour-Based Metrology
Multiple Applications for Aselta Contour-Based Metrology Yield R&D Transfer / Ramp High-Volume Manufacturing EPE Multiple R&D Contours for EPE root Hotspot identification and Scanner Litho-etch bias monitoring & MBI* cases OPC modeling cause characterization matching control VS, PV VS VS VS, PV PV V
Slide 20: News Summary
News Summary Gaining strong customer momentum with Sculpta™ ▪ Applied is working with all leading-edge logic chipmakers on a growing number of applications Introducing new technologies for “angstrom era” patterning ▪ Sym3™ Y Magnum™ etch heals EUV line edge roughness ▪ Pioneer™ CVD patterning film f
Slide 21: Cl Mareniais.
Cl Mareniais. make possible
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