Thales Sa · EURONEXT:HO
Thales Sa — Technical Presentation (February 2005)
37 slides from Thales Sa's technical presentation, February 2005
Slide 1: Post-Doc Stage
Post-Doc Stage UMR 137 – CNRS – Thales CAPES - COFECUB Cyro Ketzer Saul (cyro (cyro@ @ ufpr. ufpr.br) br) 02/2005 CKS
Slide 2: Summary
Summary l Initial Objectives l Materials: ZnCoO – Development of planar structures of – Absorption Spectroscopy ZnSe-Fe l Nano-wires grown on anodized Al • Sub-micron dimensions – Sample preparation l Pillar Structure Fabrication – Transport measurements – E-beam lithography • PMMA – Positive Resit
Slide 3: e-beam Lithography
e-beam Lithography PMMA l PMMA Au Estrutura – Positive Resist (plexiglass) Substrato – Process • Spin coat 5000 RPM/40 s PMMA • Pre-bake 180oC / 2 min Au Estrutura • Expose ~180 µC/cm2 • Develop MIBK:IPA 3:1 Substrato • Deposit metallic layer • Metal layer liftoff Au • Pillar definition Estrutura Su
Slide 4: 300 nm holes in PMMA
400 nm hole in PMMA 300 nm holes in PMMA -Not completely open (development) -Metallic filled (25 nm Au/Pd) 02/2005 CKS
Slide 5: SU8-2002 process
l SU8-2002 – Negative Resist (Epoxi) • Pure (a) SU8-2000 Au • Diluted 2:1 SU82002 : Ciclopentanone (b) Estrutura – Process Substrato • Spin coat 3000 RPM/30 s - ~1,2 µm (a) • Spin coat 3000 RPM/30 s - ~ 340 nm (b) • Pre-bake 65oC / 2 min → raise → 95oC / 2 min Estrutura Au • Expose ~ 20 µC/cm2 Subst
Slide 6: Elphy–Quantum / IEF pillars
Elphy–Quantum / IEF 300 nm - nom φφ~~350 90 nm nm 25 nm - nom Su8- Su8-2002 – Diluted Pillar height ~340 nm 02/2005 CKS
Slide 7: TOPCON – EDS Software
TOPCON – EDS Software Large Spot 1,00E-10 l Parameters – Pillar density 1,00E-11 • Pillar distance (magnification) Current (A) HR STD • Number of pillars 1,00E-12 LM – (322 / 642 / 1282 / 2562 / 512 2) LCT – Dose regulation 1,00E-13 • Dwell time regulation ( µs → ms) l Advantage 1,00E-14 0 5000 1000
Slide 8: 30kV – 200X – 2,2 pA – 64 x 64 – 500µs
30kV – 200X - 2,2 pA – 64 x 64 - 500µs Su8-2002 ~1,3 µm thickness 02/2005 CKS
Slide 9: 20 kV – 200X – 2 pA – 64 x 64 – 100 µs
20 kV - 200X - 2 pA - 64 x 64 - 100 µs 20 kV – 200X - 2 pA - 128 x 128 - 100 µs 02/2005 CKS
Slide 10: Pillar definition
Pillar definition l Ion Millling – Neutral Ar beam (sand blast) • Parameters: – Incident energy (accelerating voltage) – Incidence angle – Neutralization current – Process stop - SIMS analysis – Incidence angle effects – Process simulation φ → incidence angle – Bombardment developed damage 02/2005 C
Slide 11: Incidence angle effects
Incidence angle effects l Standard Incidence Angle - φ = 30o – Surface planarization (atomic level) Resist Img. RMS = 646 nm Img. RMS = 396 nm 02/2005 CKS
Slide 12: GaAs GaAs
Shadow 30o GaAs Redeposition Mask Substrate GaAs 0o view Slice view Au Pad – ZnSe(Fe) ~3xh h ~ 15o 70o view 02/2005 CKS
Slide 13: Feature size variation
l Microstructure l Nanostructure a 10 x a Resist Resist a a 7xa Feature size increase = 600% 16 x a Feature size increase = 60% 3000 Fs Variation (%) 2000 1000 0 0,01 0,1 1 10 Original Fs (µm) 02/2005 CKS
Slide 14: High incidence angle etch rate
l High incidence angle – φ = 82,5o – Steep wall formation – Feature size REDUCTION ???? 1,0 0,8 Si Etch rate (A.U.) 0,6 0,4 0,2 0,0 0 20 40 60 80 100 φ (degrees) 02/2005 CKS
Slide 15: Redeposition Rate x Lateral Etch Rate
Possibility of competitive processes Redeposition Rate x Lateral Etch Rate l Redeposition Rate l Lateral Etch Rate – Increases anisotropy – Reduces anisotropy • Increase steepness • Reduce steepness – Short circuit structure – Reduces feature size • Reduces the difficulty of lithography of small str
Slide 16: Feature size limits
Feature size limits l Ion milling – Ion induced damage • Function of ion incident energy • Simulation performed with TRIM 90 – Channeling effects not included 14,0 1,8 o φ=0 o o 12,0 φ=0 φ = 30 o 1,6 φ = 30 φ φ = 82,5 o o φ = 82.5 Average range (nm) 10,0 1,4 % of Ions GaAs 8,0 1,2 6,0 1,0 4,0 0,8 2,
Slide 17: Device planarization
Device planarization l Why planarize ? – Normal fabrication process for micro sized devices (non-planarized). l Pillar structure defined – Optical lithography (microstructures) Substrate – Electronic lithography (nanostructures) l Structure passivation and insulation Si 3N4 – Si3N4 Substrate l Conta
Slide 18: Planarized process
– Planarized process l Pillar structure defined – Electronic lithography (nanostructures) Substrato l Structure passivation and insulation Si 3N 4 – Si3N4 Substrato Resiste planarizado l Structure planarization – Resist planarization or other process available Si 3N 4 Substrato l Contact opening (pr
Slide 19: Local x Global Planarization
Local x Global Planarization l Local planarization – Feature size dependence – Feature density Planarizing layer Small feature size → easier planarization l Global planarization – No feature size dependence – No feature density dependency Planarizing layer 02/2005 CKS
Slide 20: Resist Planarization
Resist Planarization l Parameters – Rectangular pillars structure – Different heights of pillars S1813 - 3000 RPM/30s SB 90 oC/1 min - HB 115oC/2min – Measurements with Dektak 3030 H f − Hi 60 % Plan = Abs H 50 i % Planarization 40 l S1813 – 3000 RPM / 30s 30 – ~1,8 µm thick 20 – SB 90oC
Slide 21: SPR-700 planarization
l SPR-700 SPR 700 - 3000 RPM / 30 Seg – 3000 RPM / 30s o o SB 95 C/60 s - HB 115 C / 2 min – ~1,5 µm thick – SB 95oC/ 1min 50 – HB 115 oC/2 min % Planarization 40 30 20 10 8 0 7 5 6 10 Fea 15 5 t ture 20 4 eigh Size /H (µm 25 3 ick ) 30 2 Th 02/2005 CKS
Slide 22: Nano950PMMA C7 planarization
l Nano950PMMA C7 – 3000 RPM / 30s Nano950PMMA C7- 3000 RPM/30s – ~1,2 µm thick SB 140oC/2 min – SB 140oC/ 1min 40 30 % Planarization 20 10 7 0 6 5 5 10 Fea 15 4 t ture 20 3 eigh Size /H ( µm 25 2 ick ) 30 Th 02/2005 CKS
Slide 23: CMP – Chemical Mechanical Polishing
CMP – Chemical Mechanical Polishing l Mechanical polishing – 200 RPM – Syton – colloidal silica 20 nm – Measurements with the Dektak 3030 Sample Sticky Wax Aluminum support ~ 160 g 02/2005 CKS
Slide 24: Test_1 - Nano950PMMA C7
l Test_1 - Nano950PMMA C7 – Pillars of 400 nm 400 350 Alt Pil (Orig) 400 300 Apos (SB) After MP (1 min) 250 After MP (+1 min) Height (nm) After MP (+2 min) 200 After MP (+2 min) After MP (+2 min) 150 After MP (+4 min) 300 After MP (+8 min) 100 Height(nm) After MP (+16 min) 50 0 200 0 5 10 15 20 25 3
Slide 25: Test_2 - Nano950PMMA C7
l Test_2 - Nano950PMMA C7 – Pillars of 400 nm 700 600 Alt Pil (Orig) 500 Apos (SB) 600 After MP (5 min) 400 After MP (+5 min) Height (nm) After MP (+5 min) After MP (+5 min) 300 500 After MP (+5 min) After MP (+5 min) 200 After MP (+5 min) After MP (+5 min) Height(nm) 400 100 0 0 5 10 15 20 25 30 30
Slide 26: Wax Planarization
Wax Planarization l Process – Capillary flow of melted wax – Reference optically flat surface – Advantages Zona com Cera Zona sem Cera • Global planarization achieved • Easy to use (non-toxic) – Drawbacks • Low melting temperature (Ion milling essays needed) • Detachment of the reference flat - diff
Slide 27: Tri-ethyleneglycol dimethacrylate
Tri- Tri-ethyleneglycol dimethacrylate l Resine developed at Thales – Laboratoire composants optiques, visualisation et securité (Laurent Divay) – Cure process (UV Light) – Introduction by capillarity – Photo-activator • CIBA darocure 1173(~360 nm) O O O O 3 02/2005 CKS
Slide 28: Preliminary test results
l Preliminary test results – Sample1 • 200 nm high features – various feature sizes – various densities • Thickness ~ 2,6 µm • Scan with Dektak 3030 – 2 mm – surface oscillation 40 nmpp • Bubbles observed • Resin adhesion to the optical flat – Sample2 • 600 nm high features – different sizes – Madji
Slide 29: Sample 1
Sample 1 UV- Lamp 02/2005 CKS
Slide 30: Materials: ZnCoO
Materials: ZnCoO l Magnetic semiconductor – Magnetism due to Co clusters ? • Optical absorption spectra measurements 02/2005 CKS
Slide 31: Absorption Spectroscopy
Absorption Spectroscopy l Measurements – Varian – Cary-UV 5000 – Characteristic peaks of Co+2 – Peaks over the absorption bands • Cobalt plasmon peaks • Quantum confinement on Cobalt clusters Energy (eV) Energy Energy(eV) (eV) 65 4 3 2 1 2,5 25 1,5 4 1 3 1,5 1,5 2659 0,15 0,8 dAbs/dE (ARB) 0,6 0,4 A
Slide 32: Spectra for different concentrations of Co
Spectra for different concentrations of Co Absorption Band 3,5 2760 - 5% 2763 - 10% 3,0 ZnO (abs band) 2772 - 10% + H2 2,5 2765 - 15% 2412 - 25% 2,0 d(Abs)/dE 1,5 1,0 0,5 0,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 Energy (eV) 02/2005 CKS
Slide 33: Nano-wires grown on anodized Al
Nano-wires grown on anodized Al l Samples – L. Piraux - Université Catholique de Louvain la Neuve • Contact Au – 30nm • Al – Anodized (Total thickness ~ 700 nm) • Multilayer – AF004 / AF003 (Co – 14 nm / Cu 7nm) Al Au Substrat 02/2005 CKS
Slide 34: Resiscope AF004-4
Resiscope (Vp=1V) Af004-4 (32 bilayers) As: grown 2°“ polishing stepe Conductive surface ratio As grown 1st polishing step 2nd polishing step 3.6% 36.6%
Slide 35: Resiscope AF004-4 tips
Resiscope (Vp=1V) Af004-4 (32 bilayers) Conductive diamond tip Tapping Si tip 02/2005
Slide 36: Transport measurements
Transport measurements 9.90 9.82 AF004-4 AF004-4 +15mA Contact XG 9.85 Contact XG T=300K -15mA T=300K Manip DC I=15mA 9.80 9.80 9.75 9.78 R (Ohm) R (Ohm) 9.70 9.76 9.65 9.74 9.60 9.72 9.55 9.50 9.70 -8000 -6000 -4000 -2000 0 2000 4000 6000 8000 -0.015 -0.010 -0.005 0.000 0.005 0.010 0.015 H (Gauss)
Slide 37: The End
The End 02/2005 CKS