Tainergy Tech Co., Ltd. · TWSE:4934
Tainergy Tech — Investor Presentation (November 2020)
36 slides from Tainergy Tech's investor presentation, Nov 18, 2020
Slide 1: Trend and Prospect of 3rd Gen. Semiconductor Materials
Trend and Prospect of 3rd Gen. Semiconductor Materials Tainergy Tech Co., Ltd.
Slide 2: Safe Harbor Notice
Safe Harbor Notice The information provided in this presentation contains forward-looking statements. This forward-looking statement will be affected by risks, uncertainties and inferences, some beyond our control, and actual results may differ materially from these forward-looking statements. As a
Slide 3: Outline
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 3
Slide 4: Outline: Company Profile
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 4
Slide 5: Company Profile
Company Profile • Tainergy Tech Co., Ltd. • IPO：Aug. 2011 (TSEC：4934) • Established : 2007/5/14 • Capital： NTD 2 Bill. • President ：Hsieh, Ching-Fu • General Manager ：Vincent Hsieh • Operating Base：Zhongli/Taiwan、Kunshan/China、 Hanoi/Vietnam • Major Investor：Kenmec Shareholding %：28.83% • Major Prod
Slide 6: Organizational Chart
Organizational Chart Tainergy(4934) NTD2 Bill. Zhongli/Taiwan 64% | Taisic || Tainergy! | Vinergy MATERIALS || Samoa | ! NTD10 Mill. | | | | usp42 Mil. Zhongli/Taiwan | | USD70 Mill. || ysnoi/Vietnam | eee | StarSolar NTD5 Mill. Zhongli/Taiwan a Tainergy Kunshan USD70 Mill. Kunshan SENSIC Kunshan Ji
Slide 7: SiC BU
SiC BU Subsidiary: TAISIC Materials Corp. Founded：Jun. 2020 Representative：Kevin Hsieh Main Product：SiC Substrates Investors：Tainergy 64% Kenmec 10% 7
Slide 8: Outline: Introduction & Application of 3rd Gen. Semiconductor Materials
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 8
Slide 9: Category of Semiconductor Materials
Category of Semiconductor Materials Materials Applications Properties • Abundant Si element in nature • Mature purification & crystal growth technology • Excellent isolation properties of 1st Gen. Ge、Si Microelectronics, IE SiO2 • Restrictions on optoelectronic and HF applications due to Si physical
Slide 10: Advantages of SiC Devices
Advantages of SiC Devices High Power Applications Ultra High Working Voltage Ultra High Frequencies More Stable at High Temp. Excellent Radiation Resistance Smaller Module Size 10
Slide 11: Physical Properties of SiC
Physical Properties of SiC Properties Si SiC GaN Bandgap eV 1.12 3.26 3.39 Electron Mobility cm2/V-s 1450 900 2000 Electron Field for MV/cm 0.3 3.5 3.5 Breakdown Saturated Drift Velocity x 106 cm/s 10 22 25 Thermal Conductivity W/cm/K 1.5 4.5 1.3 11
Slide 12: Comparison of Physical Characteristics
Comparison of Physical Characteristics 12
Slide 13: Comparison of SiC Substrates
Comparison of 2 SiC Substrates N-type Semi-insulating Resistivity Ohm-c 0.015-0.028 > 1E6 m Range Orientation 4° Off On-axis 350µm 500µm Thickness +/-25µm +/-25µm Epitaxy SiC GaN Applications Electronic Power RF 13
Slide 14: Comparison of Substrates for GaN Epitaxy
Comparison of Substrates for GaN Epitaxy Sapphire Si SiC GaN Lattice Constant (Å ) 2.75 5.43 3.08 3.19 Lattice mismatch with GaN (%) 16 17 3.4 - Coefficient of thermal expansion (10-6K-1) 7.5 2.6 4.2 5.6 Thermal conductivity 0.2 1.5 4.5 1.3 (W/cm/K) Maximum substrate 8” 12” 6” commercially available
Slide 15: GaN-on-SiC in PA Applications
GaN-on-SiC in PA Applications 15
Slide 16: SiC Device Applications
SiC Device Applications SiC Substrates N-type SI Power Devices MW Devices LED (SBD、MOSFET…) (HEMT) LED UPS xEV PV 5G small cells Wind Power Satellite RADAR HSR 16
Slide 17: GaN-on-Si vs GaN-on-SiC
GaN-on-Si vs GaN-on-SiC GaN-on-Silicon + ; : GaN-on-SiC will be dedicated in : ; improving performance and an : Mobile : acceptable price would be satisfying. : handset? : GaN-on-SiC : RF Energy : Cost Performance driven driven: GaN-on-Silicon will be a good amelioration. Device Cost 17
Slide 18: Applications of High Power SiC & GaN Modules
Applications of High Power SiC & GaN Modules Low-Voltage Medium-Voltage High-Voltage PFC/Power supply PV Inverter Motor Ship&Vessels Smart Power Grid Control Wind Rail EV/HEV UPS Audio Amplifer Mills Transport <200V 600V 900V 1.2kV 1.7kV 3.3kV 6.5kV+ SiC diodes GaN-on-Si Transistors Battle fields Si
Slide 19: Outline: Overview of SiC Market
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 19
Slide 20: Power vs Frequency for Various Materials
Power vs Frequency for Various Materials Source: Analog Devices 20
Slide 21: Prediction of RF GaN Device Market
Prediction of RF GaN Device Market 21
Slide 22: Prediction of RF GaN Device Market
Prediction of RF GaN Device Market 22
Slide 23: Global Demands for 5G small cells
Global Demands for 5G small cells Global Demands for 5G small cells will be up to 10.25 millions 23
Slide 24: Industrial Chain of SiC
Industrial Chain of SiC Material Ingot Wafer Epi-wafer IC Devices Modules In House Crystal Finishing Growth Epitaxy Foundry Package ACME、 USIO 4934Tainergy (Taisic) Cree、Ⅱ-Ⅵ、GTAT、Rohm Wolfspeed、Rohm、Infineon、ON Semi、 SK Siltron(DuPont)、NSC Qorvo、Mitsubishi、STMicroelectronics、 TenkeBlue、SICC、Semicore
Slide 25: Prediction of SiC Communication Device Market
Prediction of SiC Communication Device market It is estimated that the market growth will exceed 3 times in the next five years →$1.3 billion in 2023 25 Ref. : Yole Report 2018.
Slide 26: Outline: SiC Substrate Process
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 26
Slide 27: Crystal Growth of SiC
Crystal Growth of SiC 方法 LPE HTCVD PVT 圖示 LPE: Liquid Phase Epitaxial HTCVD: High Temperature Chemical Vapor Deposition PVT: Physical Vapor Transport 27
Slide 28: Schematic of SiC PVT Crystal Growth
Schematic of SiC PVT Crystal Growth 1. it is impossible to in-situ observe the crystal growth in the black box of graphite crucible. The SiC crystal seeds, graphite crucible and high-purity SiC raw materials can not be used again. It has to destroy the crucible to confirm the success or failure of t
Slide 29: Growth Process of SiC Crystal by PVT Method
Growth Process of SiC Crystal by PVT Method 1. T > 1800℃，sublimation- decomposition reaction: 2. Gas phase transmission; 3. Recrystallization in supersaturated state: 29 29
Slide 30: Features of SiC Crystal Growth
Features of SiC Crystal Growth Long Time Short Length High Purity Si：3~4 days Si：200 cm Raw materials SiC：7 days SiC：2 cm and Seed 30
Slide 31: Summary of SI-SiC Crystal Growth
Summary of SI-SiC Crystal Growth High purity Crystal Growth Vanadium Doping The resistance of SI-SiC substrate is required to be more than 1e6 Ω· cm. There are two technologies to meet requirements: 氮 硼 1. By doping vanadium to modify the electrical properties of the substrate. It will cause 釩 cry
Slide 32: Process Flow of SiC Ingot
Process Flow of SiC Ingot crystal head and surface orientation growth tail cut grinding ingot check edge cut orientation rounding 32
Slide 33: Process Flow of SiC Wafer
Process Flow of SiC Wafer orientation cutting annealing grinding QC cleaning polishing chamfering 33
Slide 34: Outline: Conclusions
Outline 1. Company Profile 2. Introduction & Application of 3rd Gen. Semiconductor Materials 3. Overview of SiC Market 4. SiC Substrate Process 5. Conclusions 34
Slide 35: Conclusions
Conclusions • There will be explosively market growth in SiC applied in both power devices and HF communications in the near future. • It is the prime time to invest in SiC substrate business, as the technology barriers and demand more than supply. • Tainergy and the subsidiary TASIC have actively s
Slide 36: Tainergy 4934: Into The New Semiconductor Era
Tainergy 4934 Into The New Semiconductor Era
Tainergy Tech — Investor Presentation (November 2020) on 6ix