Slide 1: Forward Looking Statements
Forward Looking Statements ASML Public This document contains statements relating to certain projections and business trends that are forward-looking, including statements with respect to productivity of our tools and systems performance, EUV system performance, expected industry trends, and EUV tar
Slide 2: ASML EUV lithography performance for manufacturing: status and outlook
ASML NXE 3300 Public ASML EUV lithography performance for manufacturing: status and outlook Alberto Pirati ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands SPIE 2016
Slide 3: Special appreciation to
ASML Public Slide 3 23 Feb 2016 Special appreciation to: Matthew Colburn of IBM Dan Corliss of IBM Danilo de Simone of IMEC Tony Yen of TSMC Britt Turkot of Intel corporation Chang Moon Lim of SK Hynix Seong Sue Kim of Samsung Electronics Andrew Grenville of Inpria Martin Lowisch of Zeiss ASML: Rudy
Slide 4: EUV provides lower cost, higher yield, faster time to market
EUV provides lower cost, higher yield, faster time to market ASML Public Slide 4 23 Feb 2016 1D 1D 2D Design Critical litho 54x ArF immersion 9x EUV + 21x ArFi 9x EUV +19x ArFi Wafer cost Ref. Expected Yield Ref. Expected Time-to-Market Ref. Ref.
Slide 5: NXE extension roadmap to optimize capital efficiency
NXE extension roadmap to optimize capital efficiency ASML Public Slide 5 23 Feb 2016 1st Shipment 2013 20157 20175 2019 2021 Logic DRAM R&D D1H D1M D1L 3.x <D1L 2~2.5 55 WpH NXE:3300B UVLS SNEP 3350B 20% PFR illuminator OFP 3350B 3400B 125 WpH 250W LPP NXE:3350B NXE:3400B UVLS – Mk2 SMASH – MkX Lens
Slide 6: Outline
Outline ASML NXE 3300 ASML Public Slide 6 23 Feb 2016 Throughput & Wafers per Day (WpD) Availability Defectivity, imaging and overlay
Slide 7: Wafers per day capability: multiple NXE:3300B above 1,000
Wafers per day capability: multiple NXE:3300B above 1,000 NXE:3350B demonstrated 1,368 ASML Public Slide 7 23 Feb 2016 NXE:3300B at customers NXE:3350B at ASML factory 1500 1400 1300 1200 1100 1000 day 900 per 800 700 Wafers 600 500 400 300 200 100 0 1 2 3 4 5 6 7 8 9 WpD: maximum number of wafers e
Slide 8: NXE:3300B productivity at customer: average ~800 wafers per day
NXE:3300B productivity at customer: average ~800 wafers per day over multiple weeks ASML Public Slide 8 23 Feb 2016 Total Wafers per day (cumulative) 12000 10000 8000 6000 4000 2000 0 100% 90% 80% 70% 60% 50% 40% Availability 30% Wafers per day 20% 10% 0% Total Exposed Wafers 11174 AVG WPD 798 AVG a
Slide 9: NXE:3350B productivity in ASML factory: ~950 wpd average over 8 days
NXE:3350B productivity in ASML factory: ~950 wpd average over 8 days ASML Public Slide 9 23 Feb 2016 Cumulative wafers per day 8000 7000 6000 5000 4000 3000 2000 1000 0 Day 1 Day 2 Day 3 Day 4 Day 5 Day 6 Day 7 Day 8
Slide 10: Demonstrated WpH on NXE:3350B
Demonstrated 75 WpH on NXE:3350B Further improvements with 125W settings ASML Public Slide 10 23 Feb 2016 Wafers per hour NXE:3300B, at customers NXE:3350B, In the ASML factory 100 90 80 70 60 50 40 30 20 10 0 2014 Q1 2014 Q2 2014 Q3 2014 Q4 2015 Q3 2015 Q4 NXE:3500B ATP test: 26x33mm2, 96 fields, 2
Slide 11: NXE:3350B: 125W settings qualified and ready for field roll out
NXE:3350B: 125W settings qualified and ready for field roll out ASML Public Slide 11 23 Feb 2016 Euv (Mean+/-99.7%) [mJ] 0 1 2 3 0 500 1000 1500 2000 2500 3000 3500 4000 time [sec] Mean pulse energy at Intermediate Focus ~3mJ Power (Mean) [W] 140 120 100 0 500 1000 1500 2000 2500 3000 3500 4000 time
Slide 12: NXE:3300B productivity supports customer process development
NXE:3300B productivity supports customer process development >300k wafers exposed on NXE:3300B at customer sites ASML Public Slide 12 23 Feb 2016 Total number of wafers exposed 350,000 300,000 250,000 200,000 150,000 100,000 50,000 0 2014 2015 2016 Work week
Slide 13: Acceleration in power scaling towards >200W
Acceleration in power scaling towards >200W builds further confidence in EUV productivity ASML Public Slide 13 23 Feb 2016 240 220 3100 NOMO (delivered) 200 3100 MOPA (not shipped) 180 3100 MOPA+PP (not shipped) See: 9776-21, Michael Purvis “Advances in predictive plasma formation modelling” 160 330
Slide 14: Outline
Outline ASML Public Slide 14 23 Feb 2016 Throughput & Wafers per Day (WpD) Availability Defectivity, imaging and overlay
Slide 15: Availability: capability beyond 75% proven on multiple field systems
Availability: capability beyond 75% proven on multiple field systems 2016 focus: reduce scheduled maintenance, reduce variability ASML Public Slide 15 23 Feb 2016 Uptime Scheduled Down Unscheduled down Availability [%] 0 20 40 60 80 100 76 77 70 80 70 69 70 ~50% of downtime is scheduled down System
Slide 16: Droplet Generator: Principle of Operation
Droplet Generator: Principle of Operation ASML Public Slide 16 23 Feb 2016 Sn Gas Filter Modulator Nozzle Tin is loaded in a vessel & heated above melting point Pressure applied by an inert gas Tin flows through a filter prior to the nozzle Droplet position, m 10 5 0 -5 -10 0 5 10 15 20 25 30 Time,
Slide 17: Droplet Generator: ~2x improvements in run time, swap time
Droplet Generator: ~2x improvements in run time, swap time Next generation DGen: demonstrated > 1 month lifetime capability ASML Public Slide 17 23 Feb 2016 Run time (hours) 1000 900 800 700 600 500 400 300 200 100 0 Swap time 2015 Q3 2015 Q4 2016 Q1 20 18 16 14 12 10 8 6 4 2 0 Swap time (hours) Typ
Slide 18: Continuous improvements in collector protection at increasing power
Continuous improvements in collector protection at increasing power 100 Gpulses capability demonstrated at 125W ASML Public Slide 18 23 Feb 2016 Reflectivity [%] 100 90 80 70 60 50 40 30 20 10 0 0 20 40 0 20 40 60 0 20 40 60 80 100 40 W Configuration Degradation rate = 0.7% / Gpulse 80 W Configurati
Slide 19: 250W feasibility proven without increase in protective Hydrogen flow
250W feasibility proven without increase in protective Hydrogen flow No rapid collector contamination, allowing stable droplets and >125 w/hr@20 mJ/cm² ASML Public Slide 19 23 Feb 2016 protection flow versus EUV power into NXE:3400 Critical cone flow (slm) Guide-to-the-eye 34 micron data 27 micron d
Slide 20: EUV productivity realization on track
EUV productivity realization on track ASML Public Slide 20 23 Feb 2016 Timing Source power [W] Throughput [Wafers/hr] System availability [%] Productivity [Wafers/day] 2015 125 >75 >70% >1000 2016 250 >125 >80% >1500 Done Capability demonstrated On track
Slide 21: Outline
Outline ASML Public Slide 21 23 Feb 2016 Throughput & Wafers per Day (WpD) Availability Defectivity, imaging and overlay
Slide 22: Front-side reticle defectivity: 10x reduction/year realized
Front-side reticle defectivity: 10x reduction/year realized ASML Public Slide 22 23 Feb 2016 Added particles > 92nm per reticle pass 100 10 1 0.1 0.01 0.001 0.0001 2010 2011 2012 2013 2014 2015 NXE:3100 NXE:3300B NXE:3350B Test A B C D E Cumulative # Cycles 228 140 450 222 133 1173 # Added Particles
Slide 23: Wafers exposed using reticle with 40W pellicle
200 wafers exposed using reticle with 40W pellicle ASML Public Slide 2 19 Feb 2016 Collaborative effort between Intel and ASML 200 wafers exposed with NXE Pellicle Ref: 9776-1, Britt Turkot “EUV progress towards HVM readiness” intel Portland intel Santa Clara EUV defectivity reticle shipped Scanner
Slide 24: Wafers exposed using reticle with 40W pellicle: no reticle adders
200 wafers exposed using reticle with 40W pellicle ASML Public Slide 24 19 Feb 2016 Collaborative effort between Intel and ASML 200 wafers exposed with NXE Pellicle Ref: 9776-1, Britt Turkot “EUV progress towards HVM readiness” NO RETICLE ADDERS OBSERVED IN WAFER PRINTS Particles on pellicle do not
Slide 25: Overlay impact with NXE pellicle < 0.17 nm
Overlay impact with NXE pellicle < 0.17 nm Mounted on preliminary tooling; New tooling will reduce overlay further ASML Public Slide 25 23 Feb 2016 Overlay impact reticle + studs 99.7% x: 0.07nm y: 0.08nm 0.3 nm Overlay impact reticle + studs pellicle assy 99.7% x: 0.17 nm y: 0.07 nm See: 9776-71, D
Slide 26: NXE:3350B: 2x overlay improvement at 16nm resolution
NXE:3350B: 2x overlay improvement at 16nm resolution Completed qualification for five systems in 2015 ASML Public Slide 26 23 Feb 2016 Overlay set up Set-up and modeling improvements SMASH sensor Improved alignment sensor Spotless NXE Automated wafer table cleaning Reticle Stage Better thermal contr
Slide 27: Significant improvements in lens performance
Significant improvements in lens performance ASML Public Slide 27 23 Feb 2016 Wavefront RMS (nm) 0.4nm 0.2nm 0nm NXE:3300B NXE:3350B Optical transmission NXE:3300B NXE:3350B ZEISS
Slide 28: Overlay and focus performance NXE:3350B
Overlay and focus performance NXE:3350B Well in specification due to Hardware improvements and new calibrations Dedicated chuck overlay [nm] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ABCDEFG Matched machine overlay [nm] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ABCDEFG Focus uniformity [nm] 20.2 18.0 16.0 14.0 12.0 10.0 8.0 6.
Slide 29: Matched machine overlay below 4.5nm for over a year
Matched machine overlay below 4.5nm for over a year (NXE:3300B to ArF immersion) ASML Public Slide 29 23 Feb 2016 3sigma Overlay Errors (nm) 76543210 Tool A - 40W configuration Tool B - 40W configuration Tool B - 80W configuration Tool A - 80W configuration X 3sig Y 3sig BaseLiner Verification Monit
Slide 30: NXE:3350 Imaging: 16nm dense lines and 20nm iso space
NXE:3350 Imaging: 16nm dense lines and 20nm iso space consistently achieve <1.0nm Full Wafer CDU ASML Public Slide 30 23 Feb 2016 16 nm dense lines 2.5 2 System A 1.5 System B 1 System C 0.5 System D System E System F 0 System G 20 nm is so space 2.5 System A 2 System B 1.5 System C 1 System D 0.5 S
Slide 31: New resist materials: towards 16nm resolution at full throughput
New resist materials: towards 16nm resolution at full throughput best results show 19% EL, 4.4nm LWR @ 18.5mJ/cm2 ASML 16nm Horizontal Dense lines/spaces NXE:3350 Reference CAR New formulation non-CAR New formulation CAR SEM image @BE/BF Dose 40 mJ/cm2 18.5 mJ/cm2 25 mJ/cm2 Exposure Latitude 16% 19%
Slide 32: NXE:3400B: resolution at full productivity
NXE:3400B: 13 nm resolution at full productivity Supporting 5 nm logic, <15nm DRAM requirements ASML Public Slide 32 23 Feb 2016 Reticle Stage Improved clamp flatness for focus and overlay Overlay set up Set-up and modeling improvements Projection Optics Continuously Improved aberration performance
Slide 33: Reduction in Pupil Fill Ratio for Contact Holes
Reduction in Pupil Fill Ratio for Contact Holes contrast improvement 16 nm staggered holes resolved ASML Public Slide 33 23 Feb 2016 NXE 3350, CAR hexapole illumination with Pupil Fill Ratio between 10% and 40% LCDU [nm 3] 8.00 7.50 7.00 6.50 6.00 5.50 5.00 4.50 4.00 3.50 3.00 16 nm CD 17 nm CD 18 n
Slide 34: 2D clips: pitch 32nm in x- and y- direction
2D clips: pitch 32nm in x- and y- direction, k1=0.39 Better pattern fidelity with lower Pupil Fill Ratio ASML Public Slide 34 23 Feb 2016 0.5 0.5 Pupil Fill Ratio=40% Pupil Fill Ratio=20% See: 97762, Jo Finders “Contrast optimization for 0.33NA lithography”
Slide 35: 13nm Half Pitch resolved with non-CAR resist
13nm Half Pitch resolved with non-CAR resist 17%EL and 4.2nm LWR @ 31mJ/cm2 dose ASML 13nm Horizontal NXE:3350 Baseline New formulation Dense lines CAR non-CAR SEM image @BE/BF Dose ~40 mJ/cm2 31 mJ/cm2 Exposure Latitude - 17% DoF - 150 nm LWR 4.5 nm 4.2 nm Inpria Exposures done on NXE:3350B with di
Slide 36: 20nm Contact Holes: less than 30mJ/cm2 dose with non-CAR resist
20nm Contact Holes: less than 30mJ/cm2 dose with non-CAR resist ASML 20nm Regular New formulation contact holes non-CAR SEM image @BE/BF Dose 29.5 mJ/cm2 LCDU 3.8 nm Inpria Exposures done on NXE:3350 with Quasar45 illumination
Slide 37: Summary: EUV readying for volume manufacturing
Summary: EUV readying for volume manufacturing ASML Public Slide 37 23 Feb 2016 Completed qualification of five NXE:3350B, the 4th generation EUV exposure tool, one system qualified at 75 wph Multiple systems demonstrated >1,000 wafers per day capability, with one system exceeding 1,350 wpd 80W conf