4ds Memory Ltd. · ASX:4DS
4ds Memory — Investor Presentation (February 2016)
29 slides from 4ds Memory's investor presentation, Feb 1, 2016
Slide 1: Transformational and disruptive memory storage
Transformational For personal use only and disruptive memory storage Development update - February 2016 ASX : CAY Development update February 2016 1
Slide 2: Important information
Important information For personal use only This presentation has been prepared by 4DS Memory Limited. (“4DS” or the “Company”) based on information available to it as at the date of this presentation. The information in this presentation is provided in summary form and does not contain all informat
Slide 3: 4DS Memory
4DS Memory For personal use only • Silicon Valley memory technology developer • US$10m invested in development over 8 years • Wholly owned, in-house developed, intellectual property (IP) anchored by 15 US patents granted and 8 US patents pending • Non-filamentary resistive random access memory (ReRA
Slide 4: Board of Directors - significant IPO and M&A experience
Board of Directors - significant IPO and M&A experience For personal use only Jim Dorrian Served as CEO and director of several Silicon Valley companies BA with in depth experience in M&A and IPOs gained through Chairman founding and managing successful technology exits. Partner at Crosspoint Ventur
Slide 5: Management
Management For personal use only Guido Arnout Refer to previous slide. Michael Van Buskirk Executive roles with a number of leading memory companies in Chief Engineering Officer Silicon Valley including Adesto Technologies Corporation, Innovative Silicon Inc, Spansion Inc (the flash memory JV betwee
Slide 6: Capital structure
Capital structure For personal use only ASX Code 4DS Last traded closing price1 $0.035 Market capitalisation $23.1 million Ordinary shares on issue1,2 659.2 million Escrowed performance shares 67.6 million Unlisted options3 106.1 million Top 20 Shareholders 50.4% Cash (at 31 December 2015) $2.4 mill
Slide 7: Memory storage problem
Memory storage problem For personal use only • Today, the majority of non-volatile memory (NVM) storage is NAND Flash (Flash), used in billions of mobile phones, tablets and laptops. • Memory storage use is growing exponentially: o Increasing use of cloud storage o Continued proliferation of mobile
Slide 8: 4DS opportunity: the perfect storm
4DS opportunity: the perfect storm For personal use only • Staggering growth has seen 90% of data stored today created in the last 2 years • Cloud storage is moving to silicon storage • Flash is exhausted 1. MEDIA REDEF : Age of Abundance: How the Content Explosion will Invert the Media Industry, Ja
Slide 9: Hard drives v solid state storage (SSD)
Hard drives v solid state storage (SSD) For personal use only • Hard drives in the Cloud – Great retention and recovery, but: • Power hungry • Heat producing • Inferior latency • Cloud players are moving to silicon storage ASX : CAY Development update February 2016 9
Slide 10: Flash is exhausted
Flash is exhausted For personal use only NAND Flash currently dominates the US$40bn GB silicon storage market 2D Flash 3D Flash 16nm to 20nm cell size 40nm to 50nm cell size Limits are # of electrons Limits are structural ASX : CAY Development update February 2016 10
Slide 11: The solution = 4DS ReRAM
The solution = 4DS ReRAM For personal use only • 4DS next generation memory: - higher density / potential for better scalability - cooler / consumes less power - faster - better reliability; retention and endurance • Why is 4DS ReRAM the solution? - Changes resistance of switching material - Operate
Slide 12: Two approaches to ReRAM
Two approaches to ReRAM For personal use only ALL FILAMENTARY ReRAM 4DS NON-FILAMENTARY ReRAM DATA RETENTION Switching current high Switching current low* SWITCHING CURRENT Constant Scales with cell size EFFECTIVE CELL SIZE Switching current deterrmines size Lower current allows smaller cells MARKET
Slide 13: Memory hierarchy
Memory hierarchy For personal use only R The Cloud SSD E E DRAM (HDD) HDD (SSD) CPU G L3 R L1 L2 GPU I S Cache S Where T apps & data Where are running apps & data Embedded memory are stored Processor Mobile/Tablet/PC ASX : CAY Development update February 2016 13
Slide 14: Memory hierarchy
Memory hierarchy For personal use only R The Cloud E SSD HDD (SSD) E DRAM CPU G L3 (HDD) R L1 L2 GPU I Cache S Where S Where T apps & data apps & data are running are stored Embedded memory 4DS target market Non volatile memory GB silicon storage speed, endurance and cost per bit density, size (#bit
Slide 15: Emerging NVM applications
Emerging NVM applications For personal use only ASX : CAY Development update February 2016 15
Slide 16: GB silicon storage supply chain
GB silicon storage supply chain For personal use only Mobile Mobile products device makers Consumer 4DS Memory Cloud The access memory chip Cloud technology makers Silicon storage makers ASX : CAY Development update February 2016 16
Slide 17: Memory development phases
Memory development phases For personal use only RESEARCH DEVELOPMENT PRODUCTION >1,000nm Risk Value 4DS started 15 patents 50nm 4DS now Goal line Time Single cells in large geometries Approach production geometries First product ASX : CAY Development update February 2016 17
Slide 18: 50nm milestone achieved
50nm milestone achieved For personal use only Today: 4DS demonstrated ReRAM cells at 50nm lithography – Significant progress in scalability and yield – This is where 3D Flash is today, Flash is an estimated US$40bn market – Approaching production geometries – An essential step towards viable GB sili
Slide 19: Joint development agreement with HGST
Joint development agreement with HGST For personal use only • Strategic partnership established in 2014 with HGST • HGST is a global storage leader that strategically invests in high growth and emerging technology segments and innovative product development1 • Provides access to resources and expert
Slide 20: 4DS strategy
4DS strategy For personal use only • Target the fast growing GB silicon storage market • Develop & own strong IP for GB silicon storage • Leverage strategic partnerships • Move technology to where only “time and money” is needed to go to market • Create window for tremendous shareholder value creati
Slide 21: Recent transactions
Recent transactions For personal use only Acquirer Transaction Date Value (US$) Technology Market Apple Acquired Anobit 2011 $390m Flash controllers Mobile Western Digital Acquired startup Virident 2013 $685m Flash controllers Cloud Western Digital Acquired sTec 2013 $340m Solid state drives Cloud S
Slide 22: Investment summary
Investment summary For personal use only • 4DS is targeting a massive and fast growing segment at the right time • Transformational and disruptive Silicon Valley memory platform • 4DS non-filament based ReRAM, unique among other next generation players • Developed over 8 years, US$10m invested in R&
Slide 23: Appendix
APPENDIX For personal use only ASX : CAY Development update February 2016 23
Slide 24: Synopsis
Synopsis For personal use only • Developer of next generation Resistive Random Access Memory (ReRAM) • Established in 2007 in Silicon Valley with US$10m invested in R&D over last 8 years • Listed on ASX in December 2015, $2.4m cash on hand (at 31 December 2015) • 4DS has developed a scalable non-fil
Slide 25: Consumer and mobile trends
Consumer and mobile trends For personal use only iPhone 15”MacBook Pro 2007 2008 2008 2009 2009 2010 2010 2011 2011 2012 2012 2013 2013 2014 2014 2015 2015 Minimum 0GB 128GB 256GB 384GB 512GB 640GB 768GB 896GB 1024GB Maximum 0GB 16GB 32GB 48GB 64GB 80GB 96GB 112GB 128GB • Mobile lifestyle uses silic
Slide 26: How does filamentary ReRAM work?
How does filamentary ReRAM work? For personal use only Filamentary ReRAM consists of a switching material sandwiched between two electrodes • A voltage pulse reversibly changes resistance (typically reversing voltage polarity) • Resistance change establishes “On” and “Off” • Switching materials rang
Slide 27: Why is 4DS ReRAM better?
Why is 4DS ReRAM better? For personal use only 4DS ReRAM technology is non-filamentary = no filamentary scaling and retention issues • 4DS MOHJO™ – Metal Oxide Hetero Junction – patented cell structure and operation – Oxygen exchange across hetero-junction 4DS MOHJO™ – A voltage pulse reversibly cha
Slide 28: Patent portfolio
Patent portfolio For personal use only • 4DS has 15 US patents granted and 8 US patents pending • Our granted patent portfolio contains a balance between ReRAM cell structure patents and manufacturing process patents and is split evenly between patents with a broad scope and patents that specificall
Slide 29: Corporate directory
Corporate directory For personal use only 4DS Memory Limited ABN 43 145 590 110 ASX Code : 4DS www.4dsmemory.com info@4dsmemory.com Registered office Level 2, 50 Kings Park Road, West Perth WA 6005 AUSTRALIA PO Box 271, West Perth WA 6872 AUSTRALIA +61 8 6377 8043 US office 3155 Skyway Court Fremont