Asml Holding Nv · EURONEXT:ASML

Asml Holding Nv — Investor Day (November 2014)

30 slides from Asml Holding Nv's investor day presentation, Nov 24, 2014

  1. Slide 1: EUV

    EUV Frits van Hout Executive Vice President & Chief Program Officer 24 November 2014

  2. Slide 2: Forward looking statements

    Forward looking statements Public Slide 2 This document contains statements relating to certain projections and business trends that are forward-looking, including statements with respect to our November 2014 outlook, expected customer demand in specified market segments, expected sales levels and t

  3. Slide 3: Outline

    Public Slide 3 November 2014 Outline • New technology transitions: customer perspective • EUV progress & plans • EUV infrastructure • EUV extendibility

  4. Slide 4: How customers approach new technology insertions

    How customers approach new technology insertions Public Slide 4 November 2014 • Visionary/champion • R&D enthusiastic • First results • Business manager “Shouldn’t we go for this?” • Manufacturing push back • Tough criteria, entrance hurdles • Dynamics: progress vs. milestones • 1.5 – 2 year lead ti

  5. Slide 5: Technology transitions: decisions based on early results

    Technology transitions: decisions based on early results “You have to move to where the puck will be, not where it is” (Wayne Gretzky) Public Slide 5 November 2014 Desired performance Decision point at the time of volume ramp Performance Lead time lengthens due to increasing complexity Time

  6. Slide 6: Dilemmas when adopting a game-changing technology

    Dilemmas when adopting a game-changing technology Public Slide 6 November 2014 It does not It works work We have it   We do not have it ?? 

  7. Slide 7: Outline

    Public Slide 7 November 2014 Outline • New technology transitions: customer perspective • EUV progress & plans • EUV infrastructure • EUV extendibility

  8. Slide 8: EUV status: Demonstrated >500 wafers per day at customer sites

    EUV status: Public Demonstrated >500 wafers per day at customer sites Slide 8 November 2014 • More than 500 wafers per day demonstrated during endurance tests at 2 customer sites • 7 NXE:3300B systems qualified and shipped to customers • 4 more NXE:3300B systems being manufactured, one more shipment

  9. Slide 9: Wafers per day program: Today

    Wafers per day program: Today Public Slide 9 November 2014 Improvement of CE to 4% Conversion Improved automation demonstrated at customers efficiency Automation algorithms Collector Drive laser lifetime Reduced dose margin with power 30% improvement in advanced controls collector lifetime Droplet D

  10. Slide 10: NXE:33x0B demonstrated power supports >1000 wpd

    NXE:33x0B demonstrated power supports >1000 wpd Up to 7 systems operational at >40W; 100W source operation demonstrated Public Slide 10 November 2014 NXE:3100 NXE:3300B NXE:3350B Proto 100 1200 Expose speed 90 @ 15 mJ/cm2, 50% efficiency [w/day] Demonstrated WPD at @ dose-to-clear [cm2/s] Expose spe

  11. Slide 11: Stable operation at customer site at >40W

    Stable operation at customer site: continuous use at power Public level during more than 2 months operation at >40W Slide 11 November 2014 Power of >40W System pulse count since start use system 20 60 Accumulated pulse count (Gp) 18 50 Source power [Watt] 16 14 40 12 10 30 8 20 6 4 10 2 0 0 Courtesy

  12. Slide 12: Excellent collector performance over 2 months at >40W

    Excellent collector performance - remains clean during Public more than 2 months operation at >40W Slide 12 November 2014 System pulse count Stable collector reflectivity 20 Accumulated pulse count (Gp) 100 Collector reflectivity [%] 18 90 16 80 14 70 12 60 10 50 8 40 6 30 4 20 2 10 0 0 23-Jul 30-Ju

  13. Slide 13: Continuous stable source operation at 80W

    Continuous stable source operation at 80W for 24 hrs. Public Slide 13 November 2014 50 80 40 60 Dose margin (%) 30 Power (W) 40 20 20 10 0 0 0 3 6 9 12 15 18 21 24 Time (hours)

  14. Slide 14: 100W Power demonstrated

    100W Power demonstrated 60 min run 96% die yield (45min 99.9% yield) Public Slide 14 November 2014 In Spec Out of Spec In Spec Out of Spec

  15. Slide 15: Wafers per day program: Next steps

    Wafers per day program: Next steps Public Slide 15 November 2014 Conversion efficiency Automation Collector Drive laser lifetime power Droplet Dose generator margin >1000 WPD reliability in 2015 Laser to droplet >1500 WPD Drive laser control in 2016 reliability Optical Exposure transmission dose Ove

  16. Slide 16: Source power roadmap in place for 250W

    Source power roadmap in place for 250W Public • Modular upgrades extend current performance to 80W and beyond Slide 16 November 2014 • 250W achievable while reducing HW changes / upgrade complexity Current Drive Laser configuration High Power DL Current Drive Laser configuration High Power DL 250W c

  17. Slide 17: Availability roadmap in place towards >90%

    Availability roadmap in place towards >90% Public Slide 17 November 2014 100 90 80 70 System availability [%] 60 50 Collector lifetime: Droplet Generator: Droplet Generator: 40 • Flows, heated vanes • Liquid tin refill • In-line refill • In-situ cleaning Tin catch: Drive Laser/Beam delivery 30 Dropl

  18. Slide 18: NXE:33x0B Industrialization Roadmap supports >1500 wafers per day in 2016

    NXE:33x0B Industrialization Roadmap supports Public >1500 wafers per day in 2016 Slide 18 November 2014 Source power Throughput Efficiency* Productivity Timing [W] [Wafers/hr] [%] [Wafers/day] 2014 80 >55 <50% >500 2015 125 >75 >50% >1000 2016 250 >125 >55% >1500 *Efficiency = system availability x

  19. Slide 19: Excellent and stable overlay matching to immersion

    Excellent and stable overlay matching to immersion Public Full-wafer matched machine overlay < 4nm at 40W, stable over 2 weeks Slide 19 November 2014 10 8 Lot (3.3, 3.0) 7.5 6 MMO [nm] MMO [nm] 99.7% x: 3.3 nm 10 nm y: 3.0 nm 5 4 2.5 2 0 0 1 2 3 4 5 6 Aug 4 Aug 8 Aug 17 Wafer – one day after setup W

  20. Slide 20: Optical performance meets 10nm & 7nm requirements

    Optical performance meets 10nm & 7nm requirements Public Slide 20 EUV (single expose) November 2014 CD requirements by node dose ~20mJ/cm2 80 27nm  70 60 Tip-to-tip CD [nm] CD performance 50 OK for 7nm 19nm  40 Tip-to-line 30 20 dose ~45mJ/cm2 10 16nm 0 20 nm 16 nm 10 nm Logic Node 7 nm Lines and

  21. Slide 21: Illuminator and mask optimization allows productivity increase

    Illuminator and mask optimization (Applications) allows productivity increase (lower dose) while maintaining imaging performance Public Slide 21 November 2014 Conventional Quasar Dose ~46 mJ/cm2 Dose ~20 mJ/cm2 focus No OPC NXE OPC DOF DOF 120nm 120nm OPC=Optical Proximity Correction DOF=Depth of Fo

  22. Slide 22: Source Mask Optimization and FlexPupil maximize process window

    Source Mask Optimization and FlexPupil maximize Public process window (Holistic Applications) Slide 22 November 2014 Process window (max pattern shift allowed: ±0.45nm) 20 15 Exposure latitude (%) Process window improved 52% 10 5 0 0 20 40 60 80 100 120 DOF (nm)

  23. Slide 23: Outline

    Public Slide 23 November 2014 Outline • New technology transitions: customer perspective • EUV progress & plans • EUV infrastructure • EUV extendibility

  24. Slide 24: EUV mask infrastructure viable for 10nm, improvements required for 7nm

    EUV mask infrastructure viable for 10nm, Public improvements required for 7nm Slide 24 November 2014 10 nm 7 nm 5 nm Players Deposition others Blank Inspection Patterning Etch Clean Mask patterning Inspect Defect review Repair Mask pellicles Mask handling Mask Pod Secured Improvements req’d Source:

  25. Slide 25: Photoresist progress on full field exposure systems

    Photoresist progress on full field exposure systems Resist is at an acceptable performance level for the 10nm chip generation Public Slide 25 November 2014 Resolution w/o post-processing • C/H with <15% LCDU • L/S with <20% LWR 16nm Status L/S: • 22nm OK • No progress last year • 16nm OK Status C/H:

  26. Slide 26: Outline

    Public Slide 26 November 2014 Outline • New technology transitions: customer perspective • EUV progress & plans • EUV infrastructure • EUV extendibility

  27. Slide 27: NXE product strategy includes extendibility of installed base

    NXE product strategy includes extendibility of installed base Estimate 50-60 systems/year by 2020 based on broad adoption in both logic & Public Slide 27 memory sectors November 2014 2015 2016 2017 2018 2019 2020 NXE:3300B NXE:3300B OFP 3300B (2-phase roll-out) Specs: Specs: 22 nm | 5.0nm | 110nm 16

  28. Slide 28: EUV roadmap has extendibility through many nodes

    EUV roadmap has extendibility through many nodes Public Slide 28 November 2014 Under study Node [logic] 22/20 14 10 7 5 5 3 2 Extend NA 0.33 to below 10nm Resolution HP [nm] 32 27 22 16 13 10 7 <7 Improved lens and 0.25 layo 0.33 0.33NA DPT NA illuminator Lens ut >0.50 NA performance flare 8% 6% 4%

  29. Slide 29: "WHEN" not "IF"

    “WHEN” not “IF” Public Slide 29 November 2014 • Customers have different approaches & criteria regarding adoption of new technology which provides differences in exact timing of “WHEN” EUV will go to volume production − EUV will be used in 10nm Logic, systems 2H15 for 2016 production • EUV is making

  30. Slide 30: Public Slide 30 November 2014

    Public Slide 30 November 2014

ASML — Investor Day (November 2014) on 6ix