Asm International N.v. · EURONEXT:ASM
Asm International — Semicon West 2015 Analyst and Investor Technology Seminar
30 slides from Asm International's conference presentation, Jul 15, 2015
Slide 1: Advanced Wafer Processing with New Materials
ADVANCED WAFER PROCESSING WITH NEW MATERIALS ASM International Analyst and Investor Technology Seminar Semicon West July 15, 2015
Slide 2: Safe Harbor Statements
SAFE HARBOR STATEMENTS Safe Harbor Statement under the U.S. Private Securities Litigation Reform Act of 1995: All matters discussed in this business and strategy update, except for any historical data, are forward-looking statements. Forward-looking statements involve risks and uncertainties that co
Slide 3: Outline
OUTLINE › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 3
Slide 4: Outline
OUTLINE › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 4
Slide 5: Scaling Is Increasingly Enabled by New Materials and 3D Technologies
SCALING IS INCREASINGLY ENABLED BY NEW MATERIALS AND 3D TECHNOLOGIES 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Patterning IEDM 2002 Spacers IEDM 2003 Scaling enabled by Materials IEDM 2007 High-mobility Low-k Materials Strained Si Scaling enabled by 3D High-k FinFET 3D TSV 3D
Slide 6: Scaling by Materials and 3D
SCALING BY MATERIALS AND 3D 14-22nm 1xnm ≤5nm ≤7nm • Density scaling (continuing Moore’s law) driving towards higher mobility materials and alternate device architectures • Future systems will integrate much wider variety of materials and device structures | 6 ASM Proprietary and Confidential Inform
Slide 7: New Materials and Processes: Moore's Law Enablers
NEW MATERIALS AND PROCESSES: MOORE’S LAW ENABLERS Higher Capacitance, Lower Leakage Higher Mobility, Lower Resistance Spacer High-k / metal gate High-k / S/D stressor / contact Metal Gate DRAM, RF, STI STI decoupling Si capacitors Strain and new Channel Materials New metal contacts Less Cross Talk,
Slide 8: Increasing Introduction Rate of New Materials
INCREASING INTRODUCTION RATE OF NEW MATERIALS TiC SiCP SiP Co CoWP Porous SiOC SiC SiC LaO LaO ZrO ZrO BEOL Hf(Si)O Hf(Si)O FEOL AlO AlO Starting Mat’l SOI SOI SiGe SiGe TaO TaO TaO SOP SOP SOP SiOC SiOC SiOC Ta/TaN Ta/TaN Ta/TaN Cu Cu Cu SiOF SiOF SiOF TiSi CoSi NiSi NiSi Si(O)N Si(O)N Si(O)N Si(O)
Slide 9: Outline
OUTLINE › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 9
Slide 10: ASM and New Materials
ASM AND NEW MATERIALS › ASM technology focuses on enabling new materials and new device integration roadmaps 3D transistor formation (FinFET & beyond FinFET) DRAM, Flash and emerging memory More than Moore / IoT applications (MEMS, Sensors, Power) › ALD and PEALD as enablers of new materials
Slide 11: ALD as Enabler of New Materials - Key Strengths of ALD
ALD AS ENABLER OF NEW MATERIALS - KEY STRENGTHS OF ALD Uniformity Step Coverage Min TiN Max 29 nm SiO2 <1% 3 <0.7% M-m SEM’s Courtesy of Philips Research Labs Interface Control Composition Control Excellent Atomically composition engineered control for interfaces to ternary alloys; optimize leakage
Slide 12: ASM New Materials Development Strategy
ASM NEW MATERIALS DEVELOPMENT STRATEGY N+≥3 New Materials Screening • Basic materials R&D • Chemical synthesis ASM MicroChemistry, Finland • Pre-cursor screening Customer joint development Process Integration • Process development N+2,3 • Integration ASMB @IMEC, Belgium • Device characterization Pro
Slide 13: Critical ALD Supply Chain Components
CRITICAL ALD SUPPLY CHAIN COMPONENTS Fundamental Process Integrated Final Product Productivity Capability Performance Process Capability Pre-cursors Reactors High productivity tools Pre-cursor Fab facilities, Delivery, Valves pumps & abatement and Vessels | 13
Slide 14: Outline
OUTLINE › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 14
Slide 15: ASM Products: ALD
ASM PRODUCTS ALD › Pulsar® XP ALD for high-k Cross-flow reactor Solid source delivery system › EmerALD® XP Pulsar® XP ALD for metal gates Showerhead reactor EmerALD® XP | 15 15
Slide 16: FinFET Challenges: ALD Enables Further Scaling in 3D
FINFET CHALLENGES: ALD ENABLES FURTHER SCALING IN 3D Source: Intel • Materials properties and channel length must be uniform over fin height • Conformal coverage required • Aspect ratios increase going from 22nm to 14nm • ALD technology has become critical for HK and MG layers | 16
Slide 17: Extendibility of Hafnium Based Oxides
EXTENDIBILITY OF HAFNIUM BASED OXIDES chipworks chipworks chipworks chipworks 45nm HK first RPMG 32 nm HK last RPMG 28nm HK first RPMG 22nm HK last RPMG Planar FET Planar FET Planar FET FinFET chipworks 14nm HK last RPMG FinFET | 17
Slide 18: ASM Products: PEALD and PECVD
ASM PRODUCTS PEALD AND PECVD › XP8-DCM High productivity single wafer tool for both PEALD and PECVD applications Accommodates up to 8 chambers by DCM PEALD and PECVD can be integrated on the same platform DCM (Dual Chamber Module) | 18
Slide 19: ALD Enabling Sub-Rayleigh Limit Lithography with Spacer Defined Patterning
ALD ENABLING SUB-RAYLEIGH LIMIT LITHOGRAPHY WITH SPACER DEFINED DOUBLE/QUADRUPLE PATTERNING Pitch: P Hard Mask Etch PEALD SiO2 on resist 80nm Pitch: 1/2 P 40nm In-situ trimming 2nd ALD Spacer Spacer Defined Double Patterning PEALD SiO2 Spacer with PEALD in production since 3x nm DRAM and Flash S
Slide 20: Liners and Spacers for Beyond 15nm FinFETs
LINERS AND SPACERS FOR BEYOND 15nm FinFET’S PEALD SiO2 and Si3N4 permanent spacers Low temperature (300 ~ 550 C) High conformality High quality (low WER, low leakage current) 40nm pitch PEALD SiO PEALD SiN | 20
Slide 21: PEALD Doped Oxides; Solution for FinFET Doping
PEALD DOPED OXIDES; SOLUTION FOR FINFET DOPING BENEFITS: › Ability to dope selective regions in vertical direction › Low damage / substrate consumption vs. Ion Implant Doped region Process Flow 1 Process Flow 2 “Bottom Fin Doping” “Top Fin Doping” Subfin doping for Channel/SD extension punch-through
Slide 22: ASM Products: Advanced Epitaxy
ASM PRODUCTS ADVANCED EPITAXY › Advanced transistors enabled with Intrepid® XP Relaxed & strained epitaxy for Si, SiGe & Ge based FinFETs through 7nm Channel (SRBs), S/D stressor, contact & passivation cap layer › Integrated, low thermal budget pre-clean module High quality surface with low in
Slide 23: Epi Si:P Process for FinFET
EPI SI:P PROCESS FOR FINFET › Epitaxial SiP film for nMOS FinFETs › Key Challenges Selective Epi process High P doping levels (>1E21) for lower resistivity. P concentration requirement increases at each node. Thickness and dopant uniformity and repeatability Low defects Throughput, especia
Slide 24: Epi Layers for Power Devices
EPI LAYERS FOR POWER DEVICES MULTI-LAYER EPI TECHNOLOGY B implant B implant B implant B implant PR mask 2nd layer Epi PR mask Multiple epi steps 4th layer Epi 1st layer Epi 1st layer Epi 3rd layer Epi N+ Drain N+ Drain 2nd layer Epi › Power devices require multiple & thick Epitaxial films to 1st lay
Slide 25: ASM Products: Furnace CVD/Diffusion/Batch ALD
ASM PRODUCTS FURNACE CVD /DIFFUSION /BATCH ALD › A412 PLUS Dual boat/dual reactor system Clustering of different applications between reactors possible – only vertical furnace in the market with this capability Up to 150 product wafer load size New stocker design with integrated N2-FOUP purg
Slide 26: A400/A412 Furnace - Innovation
A400/A412 FURNACE - INNOVATION Example 1: Voidless silicon gapfill. Example 2: ALD assisted Directed › Filling of trenches of rectangular shape Self Assembly (DSA) imposes challenge for voidless gapfill in >14nm. › DSA is a promising patterning › Standard silicon gap fill: technique for 7nm and beyo
Slide 27: Wafer Fab Equipment Forecast
WAFER FAB EQUIPMENT FORECAST Wafer Fab Equipment by Node 40.0 35.0 Advanced nodes: market 30.0 segments with high expected growth 25.0 $B 20.0 7 nm and below 10 nm 15.0 14 nm 10.0 22 nm 32 nm 5.0 45 nm 65nm & above 0.0 2013 2014 2015 2016 2017 2018 2019 Gartner July, 2015 Key customer ALD and PEALD
Slide 28: Outline
OUTLINE › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 28
Slide 29: Summary and Conclusions
SUMMARY AND CONCLUSIONS › Scaling is increasingly enabled by new materials and 3D technologies › ALD and PEALD enable new materials and 3D › Hafnium based ALD high-k gates on ASM Pulsar® extendable for 4 device generations › XP8 PEALD patterning films continue to be extendable › XP8 PEALD Doped oxid
Slide 30: Drive Innovation: Deliver Excellence
DRIVE INNOVATION : DELIVER EXCELLENCE
ASM International — Semicon West 2015 Analyst and Investor Technology Seminar on 6ix