Asm International N.v. · EURONEXT:ASM
Asm International — Semicon West 2012 Analyst and Investor Technology Seminar
25 slides from Asm International's conference presentation, Jul 11, 2012
Slide 1: Products and Technologies for Advanced Wafer Processing
Products and Technologies for Advanced Wafer Processing Drive Innovation, Deliver Excellence ASM International Analyst and Investor Technology Seminar Semicon West July 11 2012 © 2012 ASM ASM Proprietary and Confidential Information 1
Slide 2: Outline
Outline • ASM Front-end Products and selected applications • ALD High-k gate/metal gate • PEALD for Spacer Defined Double Patterning • Epitaxy • Low-k • Vertical Furnace • Platform roadmap • Summary © 2012 ASM ASM Proprietary and Confidential Information 2
Slide 3: Scaling will increasingly be enabled by New Materials and 3D Technologies
Scaling will increasingly be enabled by New Materials and 3D Technologies 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Scaling enabled by Materials IEDM 2002 Low-k Scaling enabled by 3D IEDM 2003 Strained Si Chipworks 2012 IEDM 2007 High-k FinFET 3D SIC 3D Memory © 2012 ASM ASM P
Slide 4: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 5: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 6: High-k Metal Gate: Gate Dielectric
High-k Metal Gate: Gate Dielectric Pulsar 3000 with solid source • Current practice: Hf based (HfO2 or HfSiO4) from HfCl4/SiCl4/H2O • So far, MO chemistries have proven to be inferior (roughness, leakage, reliability) • Migration towards HfO2 as the standard because lower Equivalent Oxide Thicknesse
Slide 7: High-k Material Adoption Trend
High-k Material Adoption Trend High Performance and Low Standby Power High Performance Low Standby Power • ALD HfO2 is the only material for HP devices • High-k for LSTP devices will transition to ALD HfO2 • Convergence to gate last process for all logic to enable optimization of work function © 201
Slide 8: Transition to 3D Fully Depleted Devices and the Importance of Conformality
Transition to 3D Fully Depleted Devices and the Importance of Conformality • Metal and high-k over very challenging topography • EOT and work function have to be uniform over fin height • FinFET’s drive need for conformal films with uniform thickness, composition and micro-structure © 2012 ASM ASM P
Slide 9: Intel FinFET (Chipworks, May 2012)
Intel FinFET (Chipworks, May 2012) Perpendicular to Fin • Metal and high-k over very challenging topography • EOT and work function have to be uniform over fin height • Success of FinFETs is enabled with ALD metal gates • Entire spectrum of work functions researched and available from ASM © 2012 ASM
Slide 10: High-k/metal gate
High-k/metal gate • ALD HfO2 has become the de-facto high-k standard • Gate last process will be used for logic to enable work function optimization of the metal gate electrodes • 3D FinFET’s drive adoption of ALD, not only for the dielectric, but now also for metals • Metals and damascene like proc
Slide 11: ASM Front-end Products: ALD
ASM Front-end Products ALD Front-End Operations • Pulsar® XP • ALD for high-k • Cross-flow reactor • Solid source delivery system • EmerALD® XP • ALD for metal gates Pulsar® XP • Showerhead reactor EmerALD® XP © 2012 ASM ASM Proprietary and Confidential Information 11
Slide 12: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 13: LT PEALD SiO2 Spacer Defined Double Patterning
LT PEALD SiO Spacer Defined Double Patterning After PEALD SiO2 After PEALD spacer etch- After SiOC opening deposition (on full stack) back and photoresist strip PR/BARC PEALD SiO2 PEALD SiOC spacer SiOC a-C Polysilicon Si substrate After a-C opening After polysilicon etching, After polysilicon etchi
Slide 14: Spacer Defined Multiple Patterning
Spacer Defined Multiple Patterning K. Kim et al, Samsung, SPIE advanced lithography 2012 • Spacer defined quadruple patterning : two sequences of spacer pattern transfer © 2012 ASM ASM Proprietary and Confidential Information 14
Slide 15: ASM Front-end Products: PEALD MIR 3000
ASM Front-end Products PEALD • MIR 3000 • PEALD of SiO2 for Spacer Defined Double Patterning • High productivity XP cluster with 2 PEALD modules, each processing 4 wafers • PEALD enables tunable SiO2 film properties, to optimize for film quality or ease of film removal MIR 3000 © 2012 ASM ASM Propri
Slide 16: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 17: Extendibility of ASM's Low-k Solution
Extendibility of ASM’s Low-k Solution HVM since 2001 Aurora®Lowk Visibility until 2017 Aurora®ULK Aurora®ELK(UV) UV assisted Porogen © 2012 ASM ASM Proprietary and Confidential Information 17
Slide 18: ASM Front-end Products: PEALD and PECVD XP8
ASM Front-end Products PEALD and PECVD Front-End Operations Introduced during Semicon West 2012 • XP8 RC4 RC5 • High productivity single wafer tool for RC3 RC6 both PEALD and PECVD applications • Accommodates up to 8 chambers for RC2 RC7 PEALD or PECVD RC1 RC8 • PEALD and PECVD can be integrated on
Slide 19: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 20: Epi layers for Power Devices
Epi layers for Power Devices Multi-Layer Epi Technology B implant B implant PR mask 2nd layer Epi Multiple epi steps 1st layer Epi 1st layer Epi 1st layer Epi N+ Drain N+ Drain N+ Drain Gate B implant B implant Source Source PR mask • Number of epi layers dependent upon the breakdown voltage 4th lay
Slide 21: ASM Front-end Products: Epitaxy Intrepid XP
ASM Front-end Products Epitaxy Introduced during Semicon West 2012 • Intrepid® XP • Epi for advanced CMOS strain • High productivity system using ASM’s XP cluster with 4 Epi reactors • Integrated Pre-Clean for pre-Epi interface control Intrepid™ XP © 2012 ASM ASM Proprietary and Confidential Informa
Slide 22: ASM Products – Front-end
ASM Products – Front-end Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic • ALD solution (Hafnium oxide) • 3D FinFET requires more manufactur
Slide 23: Wafers Out in one Day: A412 PLUS
A412 PLUS: Productivity and Innovation Productivity Innovation • One A412 PLUS = up to 80 A • Addition of ALD processes kwpm (2.5 hr process, 95% B • Example: Batch ALD TiN available, 150 wafer boat) process • About 40% lower capex per m2 as competitors • Dual boat/dual reactor system 57.7 nm TOP Re
Slide 24: Wafer Fab Equipment Forecast
Wafer Fab Equipment Forecast ≤14 nm Wafer Fab Equipment Forecast 22 nm by technology node 32 nm 45.0 45 nm 65 nm +9% 40.0 ≥90nm +15% +7% -10% -9% 35.0 Share of 28nm, 22nm +145% and 14nm of total 30.0 Equipment spending increasing in 2012-2013 WFE $B 25.0 20.0 15.0 10.0 5.0 0.0 2010 2011 2012 2013 20
Slide 25: Summary
Summary • Adoption of more ALD and PEALD applications in HVM continues • #1 position in ALD for High-k gate • 3D FinFET’s drive adoption of ALD, not only for the dielectric, but also for metals • strong inroads into patterning applications with PEALD • Introduced Intrepid® XP, system with 4 Epi reac
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