ON Semiconductor Corporation · NASDAQ:ON
ON Semiconductor — Investor Presentation (September 2020)
36 slides from ON Semiconductor's investor presentation, September 2020
Slide 1: PIM Modules Energy Infrastructure Customer Presentation
PIM Modules Energy Infrastructure Customer Presentation September 2020 4/27/2021
Slide 2: PIM Module Markets
PIM Module Markets Solar Inverter: 20-250 kVA String Inverters UPS/Storage: 20-50 kVA Modular Blocks 1 phase Inverters EV Charging Stations Motor Drive, Servo and Commercial HVAC
Slide 3: Power Discrete and Modules – In-house Semiconductor supply
Power Discrete and Modules – In-house Semiconductor supply Roznov, Czechia Suzhou, China Bucheon, Korea IGBT, Diodes IPM, APM, Discretes IGBT, SiC, MOSFET, Diode, Drivers Shenzhen, China PIM Gresham, USA Drivers ON Vietnam Mountain Top, USA IPM, TMPIM MOSFETs
Slide 4: Complete Si & SiC Portfolio
Complete Si & SiC Portfolio Comprehensive Portfolio of Leading Edge Silicon and SiC Devices IGBT SiC 650V, 750V 650V, 1200V, 1700V Diodes 1000V, 1200V, 1700V* 650V*, 750V*, 900V, 1200V, FS3, FS4, FSII, UFS 1700V* MOSFETs Diodes SJ MOSFET 650V, 1000V, 1200V, 1600V 650V, 800V Stealth, HyperFast, Ultra
Slide 5: Review of Packages
Review of Packages 5 4/27/2021
Slide 6: Gel-filled Modules: Available Packages
Gel-filled Modules: Available Packages F1 Q0 F2 Q1 Q2 with base plate 1.2 mm press-fit pins 1.2 mm press-fit pins 1.2 mm press-fit pins 1.2 mm press-fit pins 1.6 mm press-fit pins Solder pins 1.6 mm press-fit pins Solder pins 1.6mm press-fit pins Solder pins Solder pins Solder pins With TIM/no TIM W
Slide 7: Solar Inverter
Solar Inverter NN 10 4/27/2021. Public Information
Slide 8: Application Example: Solar Inverters - 1 phase
Application Example: Solar Inverters - 1 phase Power Levels: 4kW – 8kW Interleaved Boost Circuit Interleaving helps to reduce capacitor ripple current and inductor size Inductor size can be reduced further by higher switching frequency Capacitor ripple current influences capacitor size and/or cost.
Slide 9: H6.5 Module Family; single phase residential inverter
H6.5 Module Family; single phase residential inverter Features Benefits Block Diagram • High-speed FS4 50A/650V and 75A/650V IGBT • Easier mounting with higher reliability than versions with discrete solutions • 50A/650V Stealth Diodes • Better efficiency than competitor solution • Built-in NTC Spec
Slide 10: Application Example: Solar Inverters - 3 phase – 1100V input
Application Example: Solar Inverters - 3 phase – 1100V input Power Levels: 15kW to 200kW Interleaved Boost Circuit Interleaving helps to reduce capacitor ripple current and inductor size Inductor size can be reduced further by higher switching frequency Capacitor ripple current influences capacitor
Slide 11: Boost Module Block Diagrams
Boost Module Block Diagrams Boost with Boost with Boost with IGBT + Si Diode IGBT + SiC Diode SiC MOSFET + SiC Diode Q0BOOST Faster switching Lower module losses Higher module cost Lower cost inductor/capacitor More compact end product 14 4/27/2021
Slide 12: 2 & 3 Channel SiC Hybrid & Full SiC Boost Module Family
2 & 3 Channel SiC Hybrid & Full SiC Boost Module Family Features Benefits Block Diagram (2 channel boost) • 2 channel boost module family • Easy mounting • 50A/1200V IGBT + SiC Diode • Better efficiency than competitor product • 40 mohm/1200V SiC MOSFET + SiC Diode • Range of pin compatible SiC hybr
Slide 13: T-Type NPC Module Block Diagrams
T-Type NPC Module Block Diagrams Q0PACK Q1PACK Q2PACK Higher Power Higher Power Larger Size Larger Size Lower Power Smaller Size 1 module replaces 3 modules Q1-3TNPC 16 4/27/2021
Slide 14: T-Type NPC Module Family
T-Type NPC Module Family Features Benefits Block Diagram • Full range of power levels in Q0, Q1 and Q2 package • Easy mounting • IGBT versions for medium power levels • Better efficiency than competitor product • SiC Hybrid version in Q2 package for high power levels • Supports reactive power • Buil
Slide 15: 100kW SiC Hybrid T-NPC Performance
100kW SiC Hybrid T-NPC Performance Vdc 800, Vphase 230Vrms, Pout 80 kVA, Fsw 20kHz, Tc 100°C Performance improvement with 650V SiC Diodes 2 4/27/2021
Slide 16: 3 Channel T-Type NPC Module Family
3 Channel T-Type NPC Module Family Features Benefits Block Diagram • High-speed FSII/UFS 40A/1200V IGBT • Easy mounting • High-speed 25A/650V IGBT • 15% higher power in solar inverter or UPS • Built-in NTC • Supports reactive power Specifications Product 3-channel T-type components Pins and TIM NXH2
Slide 17: 10-20kW – Q1Pack 3-ph TNPC
NXH40T120L3Q1SG 10-20kW – Q1Pack 3-ph TNPC 2 4/27/2021
Slide 18: Decentralized Utility Inverter Modules – 1100V Input
Decentralized Utility Inverter Modules – 1100V Input Features Benefits Block Diagrams: Decentralized 1100V Solar Inverter • Family for 1100V Decentralized Inverters • Better efficiency than 900V SiC based • 1000V 60A 3-channel Boost solutions because of high performance • 650V 450A I-type NPC 1000V
Slide 19: Application Example: Solar Inverters - 3 phase – 1500V input
Application Example: Solar Inverters - 3 phase – 1500V input Power Levels: 150kW to 250kW Symmetric Boost Circuit BYS+x Dx5 DC+x IN+x Dx3 Tx1 Dx1 Gx1 Ex1 DCNx Tx2 Dx2 Ex2 Gx2 IN-x BYS-x Dx4 DC-x Dx6 Channel #1 Channel #2 Channel #3 Flying Capacitor Boost 22 4/27/2021
Slide 20: Decentralized Utility Inverter Modules – 1500V
Decentralized Utility Inverter Modules – 1500V Features Benefits Block Diagrams: Solution for 1500V Solar Inverter • Family for 1500V Decentralized Utility Inverters • Better efficiency than 900V SiC MOSFET • 1000V 150A 3-channel Symmetric Boost based solutions because of high BYS+x Dx5 DC+x IN+x •
Slide 21: Q2 3-Level Boost for 1500V System
Q2 3-Level Boost for 1500V System BYS+x Dx5 DC+x IN+x Dx3 Tx1 Name Description Q'ty/Module Dx1 Gx1 Tx1,Tx2 FS4 1000V/75A, High Speed 12 Ex1 DCNx Tx2 Dx1,Dx2 1600V/35A, Protection diode 6 Dx2 Ex2 Gx2 Dx5,Dx6 1600V/35A, By-pass diode 6 IN-x Dx4 Dx3,Dx4 1200V/10A, SiC Diode 18 BYS-x DC-x Dx6 NTC 22kohm
Slide 22: Loss Simulation at 29 kW per Channel
Loss Simulation at 29 kW per Channel Boost Module Working Condition (per Channel) Vin = 830V Vout = 1170V, or 1300V Iin = 35A per channel Fsw = 16kHz (16~18 kHz) Inductance = 500 uH Heatsink = 90 degC Result: Power (kW) Vin (V) Vout (V) IG Rth-js Tj-IGBT ( 0C) Power loss-FWD (W) DI-Rth-js Tj-FWD ( 0
Slide 23: Q2 3-Level I-Type NPC for 1500V System
Q2 3-Level I-Type NPC for 1500V System Name NXH350N100H4Q2F2P1G Q'ty/Module T1,T4 FS4 1000V/75A, Middle Speed 10 1,2,3,4,5 DC+ T2,T3 FS4 1000V/100A, Middle Speed 8 T1 D1,D2,D3,D4 1000V/75A, Diode 8 D1 24 G1 D5 23 E1 D5,D6 1200V/20A, SiC Diode 10 6,7,8,9,10 N1 SP 28 T2 D2 NTC 22kohm, 5% (size 2012) 1
Slide 24: 220 kW – NXH350N100H4Q2F2P1G/S1G
220 kW – NXH350N100H4Q2F2P1G/S1G Input DC 1200 V Switching frequency 16.2 kHz Output AC L-to-L 800 V Power per channel 73 kVA ac inductor 65 uH Max heatsink temperature 90 ºC SVPWM Al2O3 Rthjh Rthjc IGBT TF (T1) 0.21 ºC/W 0.12 ºC/W Diode FD (D6) 0.42 ºC/W 0.29 ºC/W IGBT TL (T2) 0.23 ºC/W 0.13 ºC/W D
Slide 25: 255 kW – NXH400N100H4Q2F2
255 kW – NXH400N100H4Q2F2 Input DC 1200 V Switching frequency 16.2 kHz Output AC L-to-L 800 V Power per channel 85 kVA ac inductor 65 uH Max heatsink temperature 90 ºC SVPWM Si3N4 Rthjh Rthjc IGBT TF (T1) 0.17 ºC/W 0.072 ºC/W Diode FD (D6) 0.36 ºC/W 0.237 ºC/W IGBT TL (T2) 0.18 ºC/W 0.078 ºC/W Diode
Slide 26: PIM Solar Product Roadmap
PIM Solar Product Roadmap * Vehicle product Released Development Plan = Full SiC Q2BOOST Q2BOOST Q2BOOST *custom 450A, 3-CH 300A, 3-CH F2 BOOST 200A, 2-CH 1500Vdc Q2PACK INPC, 225A Q2PACK Q2PACK Q2PACK *custom INPC, 350A INPC, 400A Si3N4 DBC Q3Dual HB 600A Q0BOOST Q1BOOST Q0BOOST F2 BOOST 160A, 1-CH
Slide 27: Full SiC PIMs
Full SiC PIMs NN 30 4/27/2021. Public Information
Slide 28: Industrial Full SiC PIMs
Industrial Full SiC PIMs Key: Module/ F2 F2 F2 F1 F1 F1 Q0 Q1 27 mΩ Released Voltage Half Full Six Pack Half Full Diode 2x 3x 10 mΩ* Samples Bridge Bridge Bridge Bridge Full Boost Boost built on Bridge request 1200V 6 mΩ* 60 mΩ In Design 12 mΩ 10 mΩ* 60 mΩ Roadmap 18V – 20V Gate Drive 20 mΩ 20 mΩ 20
Slide 29: Module pinouts
Module pinouts F1 Half Bridge F1 Full Bridge F2 Half Bridge Same pinout All power levels e e LS + + as as C C S_ Ph Ph D D S1 S3 e e S + + as as _L C C Ph Ph G D 1 D 3 G G 1 TC T1 N - - - - C C C C - - - - C C C C D D D D D D D D 2 TC N + + C C D D T2 2 4 G G S + + _H C C D D G 2 C A S H S_ 2 C A 1
Slide 30: 6mohm 1200V Half Bridge Module Summary
6mohm 1200V Half Bridge Module Summary 33 4/27/2021
Slide 31: 6mohm 1200V Half Bridge Module Summary
6mohm 1200V Half Bridge Module Summary 34 4/27/2021
Slide 32: Module Design In Support
Module Design In Support 35 4/27/2021
Slide 33: Tools for Customer Design-In
Tools for Customer Design-In PSPICE model of module Parasitics estimated before build, then updated STEP file for module DBC with die positioning for thermal simulation We can assess Rth and losses using ANSYS simulation (with simple boundary conditions) 36 4/27/2021
Slide 34: Module Development and Support
Module Development and Support Simulation Selection Layout Description Target BOM Pcs Vin (V) Vout (V) Freq (kHz) Power losss -IGBT (W) Tx1,Tx2 FS4 1000V/75A, High Speed 2 850 1170 16 36.6 850 1300 16 41.8 Dx1,Dx2 1600V/35A, Protection diode 2 850 1170 20 43.6 850 1300 20 49.6 Dx5,Dx6 1600V/35A, By-
Slide 35: Physical SPICE models - benefits
Physical SPICE models - benefits Closer matching of simulation results to actual circuits • Thermal simulation – self- heating effects included • Reverse recovery behaviour • Effect of parasitics at circuit, module and die level
Slide 36: Thank You
Thank You Public Information
ON Semiconductor — Investor Presentation (September 2020) on 6ix