Slide 1: New Materials as an enabler for Advanced Chip Manufacturing
New Materials as an enabler for Advanced Chip Manufacturing Drive Innovation, Deliver Excellence ASM International Analyst and Investor Technology Seminar Semicon West July 10 2013 © 2013 ASM
Slide 2: Outline
Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • ASM Front-end Products and selected applications • Summary and Conclu
Slide 3: Outline
Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • ASM Front-end Products and selected applications • Summary and Conclu
Slide 4: Scaling will increasingly be enabled by New Materials and 3D Technologies
Scaling will increasingly be enabled by New Materials and 3D Technologies Front-End Operations 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Scaling enabled by Materials IEDM 2002 Low-k Scaling enabled by 3D IEDM 2003 Strained Si Chipworks 2012 IEDM 2007 High-k FinFET 3D SIC 3D Me
Slide 5: Increasing Introduction Rate of New Materials
Increasing Introduction Rate of New Materials Front-End Operations SiC LaO ZrO Hf(Si)O AlO BEOL Porous SiOC FEOL SOI Starting Mat’l SiGe TaO TaO SOP SOP SiOC SiOC Ta/TaN Ta/TaN Cu Cu SiOF SiOF TiSi CoSi NiSi Si(O)N Si(O)N Si(O)N Si(O)N TiW Ti/TiN Ti/TiN Ti/TiN WSi, MoSi WSi, PtSi W W (B)PSG (B)PSG (
Slide 6: New Materials and Processes: Moore's Law Enablers
New Materials and Processes: Moore’s Law Enablers Front-End Operations Higher Capacitance, Lower Leakage Higher Mobility, Lower Resistance High-k and Metal Gates DRAM, RF, decoupling capacitors Strain and new Channel Materials New metal contacts Less Cross Talk, Faster Interconnect Smaller Feature S
Slide 7: ALD enables new materials and 3D
ALD enables new materials and 3D Front-End Operations • New materials and 3D applications require more precise and controlled thin film deposition • Compared to conventional deposition techniques ALD offers superior: • Uniformity • Conformality • Interface control • ASMI is a leading player in the A
Slide 8: What is Atomic Layer Deposition (ALD)?
What is Atomic Layer Deposition (ALD)? Front-End Operations Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Step 3: Reaction to Oxide/Nitride Step 4: Purge with O2, H2O, NH3 co-reactant and repeat… © 2013 ASM 8
Slide 9: Key strengths of ALD relative to conventional deposition
Key strengths of ALD relative to conventional deposition Front-End Operations Uniformity Step Coverage Min TiN Max 29 nm SiO2 <1% 3σ <0.7% M-m SEM’s Courtesy of Philips Research Labs Interface Control Composition Control Ge 0 100 Atomically Excellent engineered 25 75 composition interfaces to contro
Slide 10: ASM's unique Materials Development Capabilities
ASM’s unique Materials Development Capabilities Front-End Operations ASM Microchemistry (Fi) Pre-cursor Exploration Process Feasibility Basic Materials R&D N+≥3 Cooperative R&D Projects ASM Belgium Process Development Process Integration 15 – 7 nm N+2,3 Cooperative R&D Projects ASM Europe ASM Americ
Slide 11: Outline
Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • ASM Front-end Products and selected applications • Summary and Conclu
Slide 12: Major Trends in Thin Film Deposition and ASM's Vision for ALD
Major Trends in Thin Film Deposition and ASM’s Vision for ALD Front-End Operations Thin Film Needs: Integration Capabilities • New materials • Subtractive and • Thinner films Damascene patterning • Interface engineering • Etching • 3D conformality • Gap fills • Lower thermal budget • Clustering ALD
Slide 13: FinFET Challenges: ALD enables Further Scaling in 3D
FinFET Challenges: ALD enables Further Scaling in 3D Front-End Operations IMEC, 2011 • Materials properties and channel length must be uniform over fin height • Conformal coverage required • ALD technology has become critical for HK and MG layers © 2013 ASM 13
Slide 14: ASM Front-end Products: ALD
ASM Front-end Products ALD Front-End Operations • Pulsar® XP • ALD for high-k • Cross-flow reactor • Solid source delivery system • EmerALD® XP • ALD for metal gates • Showerhead reactor Pulsar® XP EmerALD® XP © 2013 ASM 14
Slide 15: What is Plasma Enhanced Atomic Layer Deposition (PEALD)?
What is Plasma Enhanced Atomic Layer Deposition (PEALD)? Front-End Operations Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Plasma + Faster + Lower temperatures + More chemistries + Denser films - More complex - Plasma may preclude Step 3: Reaction to Oxide/Nitride some applications or meta
Slide 16: PEALD as an enabler of Lower Temperature Budget
PEALD as an enabler of Lower Temperature Budget Front-End Operations LT SiO2 SiO2 SiN SiCN Deposition 50 oC 260 oC 360 oC 360 oC Temperature SDDP (LT) Low WER Application FEOL SDDP Gate spacer Gate spacer Gate spacer Low temperature deposition of SiO2 and Si3N4 opens up wide potential application sp
Slide 17: New Materials enabling Lithography: Spacer Defined Double Patterning
New Materials enabling Lithography Spacer Defined Double Patterning Front-End Operations Litho-formed Resist Pattern Depo of SiO2 at 50C Spacer Thickness NU <1%, 3σ 44nm Pitch Left Conformal SiO2 Resist Uniform CD’s: Anisotropic Etch Center Right 22nm ASM, ALD conference 2008; SPIE Pitch/2 conferenc
Slide 18: ASM Front-end Products: PEALD and PECVD
ASM Front-end Products PEALD and PECVD Front-End Operations • XP8 RC4 RC5 • High productivity single wafer tool for RC3 RC6 both PEALD and PECVD applications • Accommodates up to 8 chambers for RC2 RC7 PEALD or PECVD RC1 RC8 • PEALD and PECVD can be integrated on the same platform © 2013 ASM 18
Slide 19: Outline
Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • ASM Front-end Products and selected applications • Summary and Conclu
Slide 20: ASM Products – Front-end
ASM Products – Front-end Front-End Operations Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET
Slide 21: ASM Products – Front-end
ASM Products – Front-end Front-End Operations Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET
Slide 22: ASM Front-end Products: Advanced Epitaxy
ASM Front-end Products Advanced Epitaxy Front-End Operations • Enabling transistor performance • Strained epitaxial films for planar & FinFET devices • Excellent interface control for high quality film growth • Integrated Pre-Clean module • High productivity • Platform with 4 Epi chambers Intrepid™
Slide 23: Epi layers for Power Devices
Epi layers for Power Devices Multi-Layer Epi Technology Front-End Operations B implant B implant B implant B implant PR mask 2nd layer Epi PR mask Multiple epi steps 4th layer Epi 1st layer Epi 1st layer Epi 3rd layer Epi 2nd layer Epi N+ Drain N+ Drain 1st layer Epi • Thick multi-layer epi needed f
Slide 24: ASM Products – Front-end
ASM Products – Front-end Front-End Operations Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET
Slide 25: Extendibility of ASM's Low-k Solution
Extendibility of ASM’s Low-k Solution Front-End Operations 3.2 3 Aurora® low-k (k=2.8~3.1) 2.8 Pore Seal / Restoration ILD k-value 2.6 Aurora® low-k (k=2.6) 2.4 Aurora® ELK (2.3-2.5) 2.2 2 Aurora® ELK (2.0) 1.8 UV-assisted process k<2.0? 1.6 90~45nm 32nm 22nm 15nm 11nm 8nm © 2013 ASM 25
Slide 26: ASM Products – Front-end
ASM Products – Front-end Front-End Operations Market Requirements: 32nm→22nm →14nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET
Slide 27: A412 PLUS: Productivity and Innovation
A412 PLUS: Productivity and Innovation Front-End Operations Productivity Innovation • One A412 PLUS = up to 80 A • New ALD and CVD processes kwpm (2.5 hr process, 95% B • Example 1: AlN available, 150 wafer boat) • About 40% lower capex WiW NU: per m2 as competitors ~0.25% 1σ • Dual boat/dual reacto
Slide 28: Wafer Fab Equipment Forecast
Wafer Fab Equipment Forecast Front-End Operations Wafer Fab Equipment Forecast ≤14 nm by technology node 22 nm 40.0 32 nm +15% +15% -4% 45 nm +17% 35.0 65 nm -18% ≥90nm -6% Share of 28nm, 22nm 30.0 and 14nm of total 25.0 Equipment spending increasing in 2013-2014 WFE $B 20.0 15.0 10.0 5.0 0.0 2011 2
Slide 29: Outline
Outline Front-End Operations • New Materials: Moore’s Law Enablers • Major Trends in Thin Film Deposition • The ALD Technology Platform as a Response • FinFET related challenges and Metal ALD • PEALD as a Low Temperature Enabler • ASM Front-end Products and selected applications • Summary and Conclu
Slide 30: Summary and Conclusions
Summary and Conclusions Front-End Operations • Scaling is increasingly enabled by new materials and 3D technologies • ALD enables new materials and 3D • The ALD market offers strong growth opportunities • Adoption of more ALD and PEALD applications in HVM continues • ASMI #1 position in ALD for High
Slide 31: Drive Innovation, Deliver Excellence
Drive Innovation, Deliver Excellence © 2013 ASM