Silvaco Group, Inc. · NASDAQ:SVCO
Silvaco — Technical Presentation (November 2012)
42 slides from Silvaco's technical presentation, November 2012
Slide 1: Victory Process: Etching and Deposition Simulation
Victory Process Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation
Slide 2: Victory Process – 3D Process Simulator
Victory Process – 3D Process Simulator • Victory Process provides the capability to simulate comprehensive full process flows • Etching, Deposition • Oxidation, Stress • Implantation • Diffusion • Self explanatory process flow description • Open interface for modeling • Model parameters and function
Slide 3: Level Set Framework
Victory Process – Level Set Framework • The structure is represented as a set of implicit surfaces • Hierarchical Cartesian meshes are used to improve the accuracy around critical areas • Support for automatic and manual mesh refinement Victory Process – Full Physical 3D Semiconductor Simulator Etch
Slide 4: Level Set Framework
Victory Process – Level Set Framework • Very stable surface propagation algorithms • Automatic void detection • Avoids the problem of loops creation and correction Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation -4-
Slide 5: Etching / Deposition Modes
Victory Process – Etching / Deposition Modes • Geometrical mode • Physical mode • Numerical error is limited by the mesh • Simulates real physical processes size only • Accurately handles complex shading • Orders of magnitude faster than physical and visibility effects simulation of corresponding pr
Slide 6: Geometrical Mode
Victory Process – Geometrical Mode • Comprehensive mask support • GDSII – format masks • lay – format masks (MaskViews) • Definition of mask polygons inside the processing deck • Mask variations via the deck (shrink and expand) • Selection of a simulation window Victory Process – Full Physical 3D Se
Slide 7: Geometrical Mode: Lithography
Victory Process – Geometrical Mode • Lithography • Calculation of aerial images • Pattern transfer of aerial images Aerial Image Transferred Pattern Mask Layer Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation -7-
Slide 8: Geometrical Mode: Geometrical etching
Victory Process – Geometrical Mode • Geometrical etching • Idealized directional mask pattern or image transfer • Pattern transfer with tilted sidewalls and rounded corners With Tilted Sidewalls Ideal Pattern Transfer and Rounded Corners With Tilted Sidewalls Victory Process – Full Physical 3D Semic
Slide 9: Geometrical Mode: Wet and dry etching
Victory Process – Geometrical Mode • Geometrical etching • Idealized wet and dry etching • Selective and non-selective mode Wet Etching Initial Structure Dry Etching Wet Selective Etching Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation -9-
Slide 10: Geometrical Mode: Geometrical CMP
Victory Process – Geometrical Mode • Geometrical CMP • Idealized planarization • Selective and non-selective mode Non-Selective Selective Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 10 -
Slide 11: Geometrical Mode: Geometrical deposition
Victory Process – Geometrical Mode • Geometrical deposition • Idealized vertical resists or material regions defined by a mask • Idealized conformal deposition • Deposition of features with tilted sidewalls and rounded corners • Planar mode to partially fill holes Conformal Deposition Planar Deposit
Slide 12: Geometrical Mode - Summary
Victory Process – Geometrical Mode - Summary • Set of models for fast structure manipulation • Based on idealized processing steps • Used for • Fast structure prototyping • Creation of the initial shapes for subsequent physical analysis Victory Process – Full Physical 3D Semiconductor Simulator Etch
Slide 13: Reactor-Scale vs. Feature-Scale
Victory Process – Physical Mode Reactor-Scale vs. Feature-Scale • The numerical engine of Victory Process only operates on the feature scale level • Ballistic transport within the simulation domain is assumed • Constant particle properties within the simulation domain are assumed • Particle-particle
Slide 14: Numerical engine and open model library
Victory Process – Physical Mode • Numerical engine : • Calculates the amount of reactants reaching the surface from the reactor domain • Takes into account secondary effects • Re-deposition of removed material • Reflection of reactants • Calculates the surface propagation • Open model library (acces
Slide 15: Boundary conditions
Victory Process – Physical Mode • Boundary conditions : • The structure is symmetrically and periodically extended in X and Y directions. This is necessary to properly take into account secondary effects. • The number of 'reflections' depends on the desired redeposition accuracy • Shading effects an
Slide 16: Etching models without particle flux
Victory Process – Physical Mode • Etching models without particle flux • Particle flux is not taken into account • No visibility and shading effects are taken into account • Selective etching capability • Isotropic etching model • Anisotropic etching model Selective Isotropic Etching Initial Structu
Slide 17: Deposition models without particle flux
Victory Process – Physical Mode • Deposition models without particle flux • Particle flux is not taken into account • No visibility and shading effects are taken into account • Selective deposition capability • Conformal deposition model • Non-conformal deposition model Non-Conformal Selective Depos
Slide 18: Etching and deposition models with a single primary particle
Victory Process – Physical Mode • Etching and deposition models with a single primary particle • Only the flux of a single particle coming from the reactor is taken into account • Full consideration of visibility and shading effects • The spacial velocity distribution of the particles coming from th
Slide 19: Etching models with single primary particle, no reflection
Victory Process – Physical Mode • Etching models with a single primary particle where surface reflection is neglected • For these models a high sticking efficiency is implicitly assumed • Hence surface reflection can be neglected • Selective etching capability • The etch rate is a linear function of
Slide 20: Directional etching model
Victory Process – Physical Mode • Directional etching model • Is a single primary particle etching model • The velocity vector of all particles coming from the reactor is identical and by default perpendicular to the plane wafer surface Initial Structure Selective Directional Etching Victory Process
Slide 21: Primary etching model
Victory Process – Physical Mode • Primary etching model • Is a single primary particle etching model • The spacial velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution • Width of the distribution function may be used as a parameter
Slide 22: RIE etching model
Victory Process – Physical Mode • RIE etching model • Is a single primary particle etching model • The two physical particles (ion and neutral) are superimposed in one flux distribution • This is possible because secondary fluxes are neglected and identical surface interaction (reaction) properties
Slide 23: RIE etching model
Victory Process – Physical Mode • RIE etching model • The spacial velocity distribution of the ions is highly focused • Von Mises spacial velocity distribution is applied • The standard deviation is used as a parameter • The spacial velocity distribution of the neutral is isotropic • Ratio between t
Slide 24: RIE etching model
Victory Process – Physical Mode • RIE etching model Initial structure Etching with RIE Model Profile Sensitivity to RIE Model Parameters (ion focus, ion/neutral ratio) Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 24 -
Slide 25: Deposition models with single primary particle, no reflection
Victory Process – Physical Mode • Deposition models with a single primary particle where surface reflection is neglected • For these models a high sticking efficiency is implicitly assumed • Hence surface reflection can be neglected • Selective deposition is possible • Directional deposition model •
Slide 26: Directional deposition model
Victory Process – Physical Mode • Directional deposition model • Is a single primary particle deposition model • The velocity vector of all particles coming from the reactor is identical and by default perpendicular to the plane wafer surface • Particle direction may be used as a parameter Initial S
Slide 27: Primary deposition model
Victory Process – Physical Mode • Primary deposition model • Is a single primary particle deposition model • The spacial velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution • Width of the distribution function may be used as a par
Slide 28: Ion beam deposition models
Victory Process – Physical Mode • Ion beam deposition models • Single primary particles are considered • Static and rotating beams • Beam can temporarily be switched off during rotation • Ideally focused and Gaussian shape • Beam with divergence • Beam shape accessible via open model library • Mater
Slide 29: Ion beam deposition models
Victory Process – Physical Mode • Ion beam deposition models Initial Structure Ion Beam Deposition With Single Directional Beam Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 29 -
Slide 30: Etching models with surface reflection
Victory Process – Physical Mode • Etching models with a single primary particle where surface reflection is taken into account • Selective etching capability • Material specific sticking efficiencies • The etch rate is a linear function of the local particle flux • Re-emission etching model Victory
Slide 31: Re-emission etching model
Victory Process – Physical Mode • Re-emission etching model • Is a single particle etching model • Spacial primary velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution • Width of the distribution function may be used as a parameter
Slide 32: Re-emission etching model
Victory Process – Physical Mode • Re-emission etching model Selective Etching with Initial Structure Re-emission Etching Model Effect of Varying Sticking Efficiencies Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 32 -
Slide 33: Etching models with emission of etched material
Victory Process – Physical Mode • Etching models with a single primary particle where emission of etched material is taken into account • Ion Milling Etching Models • Static and rotating beams • Beam can be temporarily switched off during rotation • Ideally focused or Gaussian beam shape • Beam with
Slide 34: Ion milling etching models
Victory Process – Physical Mode • Ion milling etching models beam direction Initial Structure Static beam Redeposition of alloy Selective deposition efficiency After Ion Milling Material specific mill rate functions Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Si
Slide 35: Deposition models with surface reflection
Victory Process – Physical Mode • Deposition models with a single primary particle where surface reflection is taken into account • Selective deposition capability • The deposition rate is a linear function of the local particle flux • Reemission deposition model Victory Process – Full Physical 3D S
Slide 36: Reemission deposition model
Victory Process – Physical Mode • Reemission deposition model • Is a single particle deposition model • Spacial primary velocity distribution of the particles can vary from • an isotropic distribution (default) to • a highly focused distribution • Width of the distribution function may be used as a
Slide 37: Reemission Deposition Model
Victory Process – Physical Mode • Reemission Deposition Model Initial Structure Vary Sticking Efficiency Deposition with Re-emission Model Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 37 -
Slide 38: Advanced etching models with multiple primary particles
Victory Process – Physical Mode • Advanced etching models with multiple primary particle • Multiple primary particles • Some particles may be reflected • Material specific sticking efficiencies • Material specific surface reaction properties • IECE (Ion Enhanced Chemical Etching) model Victory Proce
Slide 39: Ion enhanced chemical etching model
Victory Process – Physical Mode • Ion enhanced chemical etching model • Two particle model where ions and neutral coming from the reactor are taken into account • Neutrals – Chemically active, uncharged particles • Ions – Accelerated charged particles • Neutrals are chemically reacting at the surfac
Slide 40: Ion enhanced chemical etching model
Victory Process – Physical Mode • Ion enhanced chemical etching model • e.g Silicon Etching in SFx Plasma 1. The neutrals (F) chemically attach themselves SiFx removed to Si surface (dangling bonds) Ions by ions 2. Newly formed SiFx molecules cover the F SiFx removed by surface preventing further re
Slide 41: Ion enhanced chemical etching model
Victory Process – Physical Mode • Ion enhanced chemical etching model • Ions decrease the surface coverage at the bottom of the trench Trench aspect ratio increases with ion energy Victory Process – Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation - 41 -
Slide 42: Summary
Victory Process – Summary • Victory Process is a powerful tool for simulating 3D structure transformations by etching and deposition processes • Command deck syntax based on technological processes • Very robust numerical algorithms for geometrical transformations • Ability for rapid structure proto
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