Applied Materials, Inc. · NASDAQ:AMAT

Applied Materials — Investor Day (October 2021)

55 slides from Applied Materials's investor day presentation, Oct 18, 2021

  1. Slide 1: Process Control and AppliedPRO Master Class

    PROCESS CONTROL AND APPLIEDPRO™ MASTER CLASS October 18, 2021

  2. Slide 2: Forward-Looking Statements and Other Information

    Forward-Looking Statements and Other Information Today’s presentations contain forward-looking statements, including those regarding anticipated growth and trends in our businesses and markets, industry outlooks and demand drivers, technology transitions, our business and financial performance and m

  3. Slide 3: Welcome

    2021 Master Classes WELCOME Michael Sullivan Corporate Vice President Head of Investor Relations PROCESS CONTROL and APPLIEDPRO™ MASTER CLASS | October 18, 2021 Applied Materials External Use

  4. Slide 4: 2021 Investor Events

    2021 INVESTOR EVENTS MASTER CLASSES October October 18 18 Process Control & AppliedPRO™ Applied Materials External Use

  5. Slide 5: Agenda

    AGENDA 9:00 PART 1 HOST: Mike Sullivan Fireside Chat | Dan Hutcheson, CEO, Chairman, VLSIresearch 9:10 PART 2 HOST: Keith Wells Imaging and Process Control Group Introduction Process Diagnostics and Control | Maayan Bar-Zvi Process Optimization and Control | Lior Engel 9:40 PART 3 HOST: Keith Wells

  6. Slide 6: Key Messages

    KEY Messages 1. Applied’s Imaging and Process Control Group (IPC) includes Process Diagnostics and Control (PDC) and Process Optimization and Control (POC) 2. Strategy: Improve PPAC and accelerate “t” at Applied and for our customers 3. Objective: Drive profitable growth across Applied Materials and

  7. Slide 7: Fireside Chat

    FIRESIDE CHAT Dan Hutcheson CEO and Chairman VLSIresearch, Inc. Applied Materials External Use

  8. Slide 8: Imaging and Process Control Group Introduction

    Imaging and Process Control Group Introduction Keith Wells Group Vice President, GM Imaging and Process Control Group PROCESS CONTROL and AppliedPRO™ MASTER CLASS | October 18, 2021 Applied Materials External Use

  9. Slide 9: Semiconductor Manufacturing Company Challenges

    Semiconductor Manufacturing Company Challenges Process Steps Equipment Cost* Semiconductor Revenue ~1,200 ~$18B ~$585B ~450 ~$9.5B ~$300B 28nm 3nm 28nm 3nm 2012 2021F *100K WSPM Greenfield Source: VLSI, Applied Materials Applied Materials External Use

  10. Slide 10: The Value of "t" – Time-to-Market

    The Value of “t” – Time-to-Market R&D Transfer / ramp High-volume acceleration acceleration manufacturing acceleration Applied Customer Site Site Time to output / yield = Higher rev / profit Reducing the area between the curves is worth $Bs Time Winning PPACt™ race is worth $billions to customers an

  11. Slide 11: Applied Imaging and Process Control Group

    Applied Imaging and Process Control Group Process Diagnostic and Control Group eBeam SEMVision® PROVision® VeritySEM® Defect Review eBeam Emerging eBeam CD Metrology Metrology Optical Enlight® Aera™ Optical Wafer Optical Mask Inspection Inspection Applied Materials External Use

  12. Slide 12: New Playbook for Patterning Control

    PROCESS CONTROL AND APPLIEDPRO™ NEW PLAYBOOK FOR PATTERNING CONTROL Maayan Bar-Zvi Business Unit Head Process Diagnostics and Control Applied Materials External Use

  13. Slide 13: Applied Imaging and Process Control Group

    Applied Imaging and Process Control Group Process Diagnostic and Control Group Process Optimization and Control Group eBeam SEMVision® PROVision® VeritySEM® Defect Review eBeam Emerging eBeam CD Metrology Metrology Optical Enlight® Aera™ Optical Wafer Optical Mask Inspection Inspection Co-optimized

  14. Slide 14: Process Control and AppliedPRO

    PROCESS CONTROL AND APPLIEDPRO™ NEW PLAYBOOK FOR AppliedPRO™ PATTERNING CONTROL Maayan Bar-Zvi Lior Engel Business Unit Head CVP, GM Process Diagnostics and Control Process Optimization and Control Applied Materials External Use

  15. Slide 15: New Playbook for Patterning Control

    New Playbook for Patterning Control Maayan Bar-Zvi Business Unit Head Process Diagnostics and Control PROCESS CONTROL and AppliedPRO™ MASTER CLASS | October 18, 2021 Applied Materials External Use

  16. Slide 16: Agenda

    AGENDA 1. Critical role of patterning control 2. Patterning inflection point 3. New playbook for patterning control 4. New PROVision® 3E system Applied Materials External Use

  17. Slide 17: Defect Control and Patterning Control

    Defect Control and Patterning Control Defect Control Patterning Control Particle Bridge Scratch Contact Line CD Overlay / hole CD placement error *CD = Critical Dimension Applied Materials External Use

  18. Slide 18: Traditional Patterning Control: Optical Approximation

    Traditional Patterning Control: Optical Approximation Optical proxy target ~10-30µm Actual structures (~1µm) Applied Materials External Use

  19. Slide 19: After-Development Inspection: ADI

    After-Development Inspection: ADI Overlay Errors After Rework Optical Mis-Registration Control limit Wafer Y Wafer Y Yield loss 0 2 4 6 8 10 12 14 16 18 Shorting Margin Wafer X Wafer X Source: Applied Materials ADI = Critical decision of whether to etch or rework the pattern Applied Materials Extern

  20. Slide 20: After-Etch Inspection: AEI

    After-Etch Inspection: AEI ADI-to-AEI Correlation ADI Wafer Y 20 AEI Wafer 1 AEI Wafer 2 Linear Fit Overlay Wafer X AEI 0 AEI Wafer Y -12 -12 0 20 ADI AEI = 1.03nm + 1.09 ADI Wafer X Source: Applied Materials High correlation needed for effective patterning control Applied Materials External Use

  21. Slide 21: ADI vs. AEI Results Becoming Uncorrelated

    ADI vs. AEI Results Becoming Uncorrelated ADI step AEI step Source: Cornel Bozdog, Micron Technology, Inc. (United States) “Metrology requirements driven by memory scaling” (Keynote Presentation) Paper 11325-100, AEI mentioned as ACI in the source. You can’t fix what you can’t measure. You can’t mea

  22. Slide 22: New Playbook: Element 1

    New Playbook: Element 1 OPTICAL eBEAM Via M1 Via Via M1 Cut Cut M1 Target-based approximation Actual on-device measurement Element #1 - from target-based approximation to actual, on-device metrology Applied Materials External Use

  23. Slide 23: Single-Patterning has Become Multi-Patterning

    Single-Patterning has Become Multi-Patterning SINGLE LITHO ETCH MULTI-PATTERNING Cut 1 Cut 2 ~450 ~1,200 STEPS STEPS Litho x3 Litho x4 Litho Litho x2 Litho x2 Etch x3 Etch x4 Etch Etch x2 Etch x2 Film x3 Film x4 28nm 20nm 14/16nm 10nm 7nm Source: Chipworks Applied Materials External Use

  24. Slide 24: Process Steps Introduce Variations Across the Wafer

    Process Steps Introduce Variations Across the Wafer Source: Chipworks Applied Materials External Use

  25. Slide 25: New Playbook: Element 2

    New Playbook: Element 2 Statistical sampling Massive measurements Element #2 - from statistical sampling to massive, across-wafer sampling Applied Materials External Use

  26. Slide 26: From Statistical Sampling to Massive Sampling

    From Statistical Sampling to Massive Sampling Applied Materials External Use

  27. Slide 27: Massive Sampling Reveals Process-Induced Issues

    Massive Sampling Reveals Process-Induced Issues Sparse sampling Massive sampling UV cure chamber reveals process signature signature An epiphany for process engineers Applied Materials External Use

  28. Slide 28: Planar to 3D Transition Requires More Measurements

    Planar to 3D Transition Requires More Measurements GATE Hi-K METAL GATE CD Thickness Height Recess Sidewall angle Thickness HARDMASK OVERBURDEN Line width Thickness Height above Fin Sidewall angle Width CD Top corner radius FIN BOX Height Thickness Width Sidewall angle High-k Metal Gate 3D FinFET ~3

  29. Slide 29: New Playbook: Element 3

    New Playbook: Element 3 3D structures create stresses and distortions that contribute to EPE Via M1 Via Via M1 Cut Cut M1 Edge placement error Multi-layer EPE metrology Element #3 - from single-layer patterning control to 3D integrative control Applied Materials External Use

  30. Slide 30: Controlling Mean and Mean Variation

    Controlling Mean and Mean Variation Process window Variability implication Mean to target Higher average speed Slowest orange Slowest blue Slowest Typical Fastest 3σ transistor 3σ Wafer Greg Yeric, IEDM 2015 Uniformity Circuit performance is gated by the slowest transistor Lower transistor variabili

  31. Slide 31: Maintaining Process Window

    Maintaining Process Window Process window Good die, within control limits Yield Loss Target Yield Loss Applied Materials External Use

  32. Slide 32: Goal: Widen the Combined Process Window

    Goal: Widen the Combined Process Window Mean to target Mean to target Mean to Process A target Process B Process C Yield Loss Target Yield Loss Applied Materials External Use

  33. Slide 33: Applied AIx: Actionable Insight Accelerator

    Applied AIx: Actionable Insight Accelerator Real-time ability to see into the process with Massive actionable data AIx™ analytics platform innovative sensors, in-vacuum metrology + with unique metrology + across all Applied tools ChamberAI™ ML algorithms AppliedPRO™ Digital twin models Process tools

  34. Slide 34: Introducing PROVision 3E eBeam Metrology System

    Introducing PROVision® 3E eBeam Metrology System 1. Resolution Industry-leading eBeam column technology provides the highest electron density available, enabling detailed imaging at 1nm resolution. 2. Accuracy Leverages decades of CD SEM system and algorithm expertise to deliver accurate and precise

  35. Slide 35: Introducing PROVision 3E eBeam Metrology System

    Introducing PROVision® 3E eBeam Metrology System Edge Placement Error (EPE) ERROR SOURCES Simultaneous, multi-layer measurement Via M1 ► Overlay/alignment of all the contributors to yield-limiting ► CD uniformity of lines edge placement errors ► CD uniformity of cuts Via Via M1 ► Line roughness Cut

  36. Slide 36: PROVision 3E System

    PROVision® 3E System FROM TO 1. Resolution Target approximation On-device metrology 2. Accuracy 3. Speed Statistical sampling Massive across-wafer sampling 4. Through-layer 5. Range Single-layer control 3D integrative control Massive metrology of ► Overlay accuracy ► CD uniformity ► Edge placement e

  37. Slide 37: Process Recipe Optimization

    Process Recipe Optimization Lior Engel Corporate Vice President, GM Process Optimization and Control PROCESS CONTROL and AppliedPRO™ MASTER CLASS | October 18, 2021 Applied Materials External Use

  38. Slide 38: Applied AIx: Actionable Insight Accelerator

    Applied AIx: Actionable Insight Accelerator Real-time ability to see into the process with Massive actionable data AIx™ analytics platform innovative sensors, in-vacuum metrology + with unique metrology + across all Applied tools ChamberAI™ ML algorithms AppliedPRO™ Digital twin models Process tools

  39. Slide 39: Challenges of Enabling the "t" in PPACt

    Challenges of Enabling the “t” in PPACt™ 28nm Process Optimization X X Etch control ~5 knobs 2D metrology Statistical sampling 3nm Process Optimization Pitch 1 Facet H CDT Spacer H X CDM X CDB Foot L Core Space Foot H Foot H SiO2 Etch control >20 knobs 3D metrology Massive measurements Applied Mater

  40. Slide 40: PROVision Based Co-Optimized Metrology

    PROVision Based Co-Optimized Metrology Process developers collaborating with eBeam developers to create co-optimized solutions Transferring optimized process and metrology recipes from SCLA labs to customer R&D Developing co-optimized materials engineering and metrology solutions Applied Materials E

  41. Slide 41: AppliedPRO: Applied Process Recipe Optimizer

    AppliedPRO: Applied Process Recipe Optimizer Process parameters On-wafer metrics Benefits of AppliedPRO with PROVision metrology RF CD Chemistry Defectivity Pressure Tilt Temperature Composition CD uniformity reduces power consumption Bias Stress Conventional Time Ellipticity AppliedPRO AppliedPRO 4

  42. Slide 42: Innovations to Enable Low-Variability, High-AR Etch Process

    Innovations to Enable Low-Variability, High-AR* Etch Process Draco ™: New hard mask material + New high-temp etch technology + Unique metrology (Higher modulus and selectivity) (Better profile and CD uniformity) (Faster and better sampling error) Si new material Draco varying hole size 1.3x low-temp

  43. Slide 43: Process and Metrology Co-Optimization Enabling "t" in PPACt

    Process and Metrology Co-Optimization Enabling “t” in PPACt >20 etch process control knobs AppliedPRO with PROVision metrology = Co-optimized etch and metrology solution PROVision + large small AppliedPRO optimal optimal Latest POC win: New CVD hardmask film co-optimized with Sym3® Y etch for 3D NAN

  44. Slide 44: Imaging and Process Control Business Opportunities

    Imaging and Process Control Business Opportunities Keith Wells Group Vice President, GM Imaging and Process Control Group PROCESS CONTROL and AppliedPRO™ MASTER CLASS | October 18, 2021 Applied Materials External Use

  45. Slide 45: Key Messages

    KEY Messages 1. Applied’s Imaging and Process Control Group (IPC) includes Process Optimization and Control (POC) and Process Diagnostics and Control (PDC) 2. Strategy: POC uses eBeam and AI to accelerate process R&D and improve PPACt™ at Applied and for our customers; PDC uses optical, eBeam and AI

  46. Slide 46: Applied's eBeam Portfolio

    Applied’s eBeam Portfolio SEMVision® Defect Review Defect classification Applied Materials External Use

  47. Slide 47: Applying Big Data + AI Strategy

    Applying Big Data + AI Strategy Pattern Variation = noise Protrusion = performance impact Bridge = killer defects 1. Unclassified Data 2. Classification & Training 3. Inferencing Use Enlight system to Use SEMVision system to train Enlight with ExtractAI now quickly generate database ExtractAI™ to cl

  48. Slide 48: Applied's eBeam Portfolio

    Applied’s eBeam Portfolio SEMVision® PROVision® eBeam VeritySEM® eBeam Defect Review Emerging SEM Metrology CD Metrology Defect classification Massive sampling CD metrology Applied Materials External Use

  49. Slide 49: eBeam Imaging Sources Over Time

    eBeam Imaging Sources Over Time ~1970 ~1990 ~2020* Thermal Thermal Field Cold Field Source Emission Source Emission Source Applied’s CFE technology increases resolution and speed – no compromise 2700 1800 300 Operating Temperature (°K) >5 1-5 <1 Resolution (nm) 1x 3-6x 9-100x Imaging Speed *Producti

  50. Slide 50: The Next Generation of eBeam Imaging

    The Next Generation of eBeam Imaging Thermal Field Emission Source Cold Field Emission Source Higher resolution, faster throughput, production worthy

  51. Slide 51: Applied's Process Control Served Markets

    Applied’s Process Control Served Markets Applied 2020 TAM 2020 Rev Applied Category Market Segment* ($M) ($M) Product Metrology CD Metrology/CD Measuring CD Measuring Tools $617 $123 VeritySEM Emerging SEM Metrology PROVision Patterned Wafer Inspection eBeam $439 $139 PROVision Defect Review Station

  52. Slide 52: IPC Group Revenue Growth Outlook

    IPC Group Revenue Growth Outlook 2.6x 1.4x 1.0x FY’13-FY’16* FY’17-FY’20 FY’21-FY’24F *Av erage rev enue in each four-year period Applied Materials External Use

  53. Slide 53: IPC Equipment Revenue Growth

    IPC Equipment Revenue Growth eBeam Optical 71% 64% FY2019 FY2021E Applied Materials External Use

  54. Slide 54: PROVision Revenue Growth

    PROVision Revenue Growth 3 2 1 FY2019 FY2020 FY2021E Applied Materials External Use

  55. Slide 55: Cll Mareniats.

    Cll Mareniats. make possible

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