Asm International N.v. · EURONEXT:ASM
Asm International — Semicon West 2014 Analyst and Investor Technology Seminar
35 slides from Asm International's conference presentation, Jul 9, 2014
Slide 1: Enabling Advanced Chip Manufacturing with New Materials
ENABLING ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS ASM International Analyst and Investor Technology Seminar Semicon West July 9, 2014
Slide 2: Safe Harbor Statements
SAFE HARBOR STATEMENTS Safe Harbor Statement under the U.S. Private Securities Litigation Reform Act of 1995: All matters discussed in this business and strategy update, except for any historical data, are forward-looking statements. Forward-looking statements involve risks and uncertainties that co
Slide 3: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM Products and selected applications › Summary and Conclusions | 3
Slide 4: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM Products and selected applications › Summary and Conclusions | 4
Slide 5: Scaling Is Increasingly Enabled by New Materials and 3D Technologies
SCALING IS INCREASINGLY ENABLED BY NEW MATERIALS AND 3D TECHNOLOGIES 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Double / Quad IEDM 2002 Patterning Scaling enabled by Materials IEDM 2003 High-mobility channel Low-k materials Strained Si Scaling enabled by 3D IEDM 2007 High-k Chi
Slide 6: Increasing Introduction Rate of New Materials
INCREASING INTRODUCTION RATE OF NEW MATERIALS SiCP SiP Co CoWP Porous SiOC SiC SiC LaO LaO ZrO ZrO Hf(Si)O Hf(Si)O BEOL AlO AlO FEOL SOI SOI Starting Mat’l SiGe SiGe TaO TaO TaO SOP SOP SOP SiOC SiOC SiOC Ta/TaN Ta/TaN Ta/TaN Cu Cu Cu SiOF SiOF SiOF TiSi CoSi NiSi NiSi Si(O)N Si(O)N Si(O)N Si(O)N Si
Slide 7: New Materials and Processes: Moore's Law Enablers
NEW MATERIALS AND PROCESSES: MOORE’S LAW ENABLERS Higher Capacitance, Lower Leakage Higher Mobility, Lower Resistance High-k and Metal Gates DRAM, RF, decoupling capacitors Strain and new Channel Materials New metal contacts Less Cross Talk, Faster Interconnect Smaller Feature Sizes (Porous) Sub-Ray
Slide 8: Semiconductor Growth Drivers
SEMICONDUCTOR GROWTH DRIVERS SEMICONDUCTOR SALES BY KEY APPLICATION (USD billion) CAGR ‘13-’18 160 Premium Smartphone 140 +6% Utility/Basic Smartphone 120 Traditional Mobile Phone 100 +14% Media Tablet, Utility/Basic 80 -20% Media Tablet, Premium 60 +18% +9% 40 PC, Ultramobile +22% 20 -8% PC, Notebo
Slide 9: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM Products and selected applications › Summary and Conclusions | 9
Slide 10: ALD as an Enabler of New Materials
ALD AS AN ENABLER OF NEW MATERIALS › New materials and 3D applications require more precise and controlled thin film deposition › Compared to conventional deposition techniques ALD offers superior: Uniformity Conformality Interface control | 10
Slide 11: What Is Atomic Layer Deposition (ALD)?
WHAT IS ATOMIC LAYER DEPOSITION (ALD)? Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Step 3: Reaction to Oxide/Nitride Step 4: Purge with O2, H2O, NH3 co-reactant and repeat… | 11
Slide 12: Key Strengths of ALD Relative to Conventional Deposition
KEY STRENGTHS OF ALD RELATIVE TO CONVENTIONAL DEPOSITION Uniformity Step Coverage Min TiN Max 29 nm SiO2 <1% 3σ <0.7% M-m SEM’s Courtesy of Philips Research Labs Interface Control Composition Control Excellent Atomically composition engineered control for interfaces to ternary alloys; optimize leaka
Slide 13: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM Products and selected applications › Summary and Conclusions | 13
Slide 14: ASM and ALD
ASM AND ALD › ASM is a leading player in the ALD market ASM introduced ALD into the semiconductor market in 1999 Developing ALD technology since then Strong IP position Number 1 in high-k gate and strong position in spacer defined double patterning (SDDP) › The ALD market offers strong growth opport
Slide 15: ASM New Materials Development Strategy
ASM NEW MATERIALS DEVELOPMENT STRATEGY N+≥3 New Materials Screening • Basic materials R&D • Chemical synthesis ASM MicroChemistry, Finland • Pre-cursor screening Customer joint development Process Integration • Process development N+2,3 • Integration ASMB @IMEC, Belgium • Device characterization Pro
Slide 16: Critical ALD Supply Chain Components
CRITICAL ALD SUPPLY CHAIN COMPONENTS Fundamental Process Integrated Final Product Productivity Capability Performance Process Capability Pre-cursors Reactors High productivity tools Pre-cursor Fab facilities, Delivery, Valves pumps & abatement and Vessels | 16
Slide 17: Extendibility of Hafnium Based Oxides
EXTENDIBILITY OF HAFNIUM BASED OXIDES chipworks chipworks chipworks chipworks 45nm HK first RPMG 32 nm HK last RPMG 28nm HK first RPMG 22nm HK last RPMG Planar FET Planar FET Planar FET FinFET Fraction of HK Adopters Top: TEM’s reproduced with permission of Chipworks | 17 Bottom: ASM estimates 2012
Slide 18: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM products and selected applications › Summary and Conclusions | 18
Slide 19: FinFET Challenges: ALD Enables Further Scaling in 3D
FINFET CHALLENGES: ALD ENABLES FURTHER SCALING IN 3D • Materials properties and channel length must be uniform over fin height • Conformal coverage required • ALD technology has become critical for HK and MG layers | 19
Slide 20: ASM Products: ALD
ASM PRODUCTS ALD › Pulsar® XP ALD for high-k Cross-flow reactor Solid source delivery system › EmerALD® XP Pulsar® XP ALD for metal gates Showerhead reactor EmerALD® XP | 20 20
Slide 21: What Is Plasma Enhanced Atomic Layer Deposition (PEALD)?
WHAT IS PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD)? Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge Plasma Step 3: Reaction to Oxide/Nitride Step 4: Purge or metal with O,N,H Radicals and repeat… | 21
Slide 22: ALD Enabling Sub-Rayleigh Limit Lithography with Spacer Defined Double Patterning
ALD IS ENABLING SUB-RAYLEIGH LIMIT LITHOGRAPHY WITH SPACER DEFINED DOUBLE PATTERNING Litho-formed Template PEALD SiO2 on resist 90nm Pitch: P ALD SiO2 Spacer Spacer Defined Double Patterning with PEALD in production since 3x nm Anisotropic Etch DRAM and Flash Key enablers brought by PEALD • Uniformi
Slide 23: Liners and Spacers for 15 and 10 nm FinFETs
LINERS AND SPACERS FOR 15 AND 10 nm FinFET’S PEALD SiO2 and Si3N4 permanent spacers Low temperature (300 – 500 °C) High conformality High quality (low WER, low leakage current) 40nm pitch PEALD SiO PEALD SiN | 23
Slide 24: ASM Products: PEALD and PECVD
ASM PRODUCTS PEALD AND PECVD › XP8 RC3 RC4 RC5 RC6 High productivity single wafer tool for both RC2 RC7 PEALD and PECVD applications Accommodates up to 8 chambers for PEALD RC1 RC8 or PECVD PEALD and PECVD can be integrated on the same platform Eagle® XP8 | 24 24
Slide 25: ASM Products: Strong IP Protected Portfolio
ASM PRODUCTS Market Requirements: 22nm→14nm →10nm and beyond Process Application ASM Relative Positioning • ALD key for High-k Metal Gate ALD and PEALD technology #1 in the served ALD market • 3D FinFET, GAA require more Qualified by nearly all Logic and • ALD solution (Hafnium oxide) Foundry manufa
Slide 26: ASM Products: Advanced Epitaxy
ASM PRODUCTS ADVANCED EPITAXY › Advanced transistors enabled with Intrepid® XP Strained epitaxial films for planar logic devices Relaxed & strained epitaxy for Si, SiGe & Ge based FinFETs through 7nm • Channel (SRBs), S/D stressor, contact & passivation cap layer › Integrated, low thermal budget pre
Slide 27: Epi Layers for Power Devices
EPI LAYERS FOR POWER DEVICES MULTI-LAYER EPI TECHNOLOGY B implant B implant B implant B implant PR mask 2nd layer Epi PR mask Multiple epi steps 4th layer Epi 1st layer Epi 1st layer Epi 3rd layer Epi 2nd layer Epi N+ Drain N+ Drain 1st layer Epi N+ Drain › Power devices require multiple & thick Epi
Slide 28: ASM Products: Strong IP Protected Portfolio
ASM PRODUCTS Market Requirements: 22nm→14nm →10nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET, GAA require more Foundry manufa
Slide 29: Extendibility of ASM's Low-k Solution
EXTENDIBILITY OF ASM’S LOW-K SOLUTION 3.2 3 Aurora® low-k (k=2.8~3.1) 2.8 Pore Seal / Restoration ILD k-value 2.6 Aurora® low-k (k=2.6) 2.4 Aurora® ELK (2.3-2.5) 2.2 2 Aurora® ELK (2.0) 1.8 UV-assisted process k<2.0? 1.6 90~45nm 32nm 22nm 15nm 11nm 8nm | 29 29
Slide 30: ASM Products: Strong IP Protected Portfolio
ASM PRODUCTS Market Requirements: 22nm→14nm →10nm and beyond Process Application ASM Relative Positioning ALD and PEALD • ALD key for High-k Metal Gate #1 in the served ALD market technology Qualified by nearly all Logic and • ALD solution (Hafnium oxide) • 3D FinFET, GAA require more Foundry manufa
Slide 31: Productivity and Innovation
PRODUCTIVITY AND INNOVATION Productivity Innovation: novel processes › One A412 PLUS = > 80 › Example 1: Novel hard mask kwpm (example: 2.5 hr A materials – e.g. for fabrication of process, 95% available, 150 B high aspect ratio structures in product wafer load) silicon (with IMEC) › Dual boat/dual
Slide 32: Wafer Fab Equipment Forecast
WAFER FAB EQUIPMENT FORECAST 7 nm and below Wafer Fab Equipment by Node 45.0 10 nm 14 nm 40.0 22 nm 32 nm 35.0 45 nm 65nm & above 30.0 Share of 22nm and 14nm 25.0 of total Equipment spending increasing in $B 20.0 2014-2015 15.0 10.0 5.0 0.0 2012 2013 2014 2015 2016 2017 2018 Gartner April, 2014 Key
Slide 33: Outline
OUTLINE › New Materials: Moore’s law enablers › ALD as enabler of new materials • What is Atomic Layer Deposition (ALD)? • Key strengths of ALD › ASM and ALD › ASM Products and selected applications › Summary and Conclusions | 33
Slide 34: Summary and Conclusions
SUMMARY AND CONCLUSIONS › Scaling is increasingly enabled by new materials and 3D technologies › ALD and PEALD enable new materials and 3D › The ALD market offers strong growth opportunities › Intrepid® XP, system with 4 Epi reactors, targeting strained Epi layers for CMOS, and Epsilon® 3200 for ana
Slide 35: Drive Innovation: Deliver Excellence
DRIVE INNOVATION : DELIVER EXCELLENCE
ASM International — Semicon West 2014 Analyst and Investor Technology Seminar on 6ix