Asm International N.v. · EURONEXT:ASM
Asm International — Semicon West 2016 Analyst and Investor Technology Seminar
34 slides from Asm International's conference presentation, Jul 13, 2016
Slide 1: Advanced Chip Manufacturing with New Materials
ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS ASM International Analyst and Investor Technology Seminar Semicon West July 13, 2016
Slide 2: Cautionary Note
CAUTIONARY NOTE Cautionary Note Regarding Forward-Looking Statements: All matters discussed in this press release, except for any historical data, are forward-looking statements. Forward- looking statements involve risks and uncertainties that could cause actual results to differ materially from tho
Slide 3: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 3
Slide 4: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 4
Slide 5: Exponentials in the Industry
EXPONENTIALS IN THE INDUSTRY Moore’s Law Density (xtor/chip) Memory Density (Mb/mm2) Complexity (Mask Count) Top: G. Moore, Electronics (1965); www.intel.com. | 5 Bottom: ASM; Techinsights and ASM (2013);
Slide 6: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 6
Slide 7: Scaling Is Increasingly Enabled by New Materials and 3D Technologies
SCALING IS INCREASINGLY ENABLED BY NEW MATERIALS AND 3D TECHNOLOGIES 1990 1995 2000 2005 2010 2015 2020 2025 Scaling enabled by Litho Patterning IEDM 2002 Spacers IEDM 2003 Scaling enabled by Materials IEDM 2007 High-mobility Low-k Materials Strained Si Scaling enabled by 3D High-k FinFET 3D TSV 3D
Slide 8: Scaling by Materials and 3D
SCALING BY MATERIALS AND 3D 2011 • Density scaling (continuing Moore’s law) driving towards higher mobility materials and alternate device architectures • Future systems will SiGe Si integrate much wider variety of materials and device structures ~2023 | 8
Slide 9: New Materials and Processes: Moore's Law Enablers
NEW MATERIALS AND PROCESSES: MOORE’S LAW ENABLERS Higher Capacitance, Lower Leakage Higher Mobility, Lower Resistance High-k / S/D metal gate contact High-k / Metal Gate DRAM, RF, STI decoupling STI Si capacitors Mitard et al., VLSI ‘16 Strain and new Channel Materials New metal contacts Less Cross
Slide 10: New Materials: Moore's Law Enablers
NEW MATERIALS: MOORE’S LAW ENABLERS sSOI/GeOI Ge IL (IL: Interface Layer) III‐V IL * GaN (PM: Patterning Materials) InSb InGaAs Ge STO Ru Other PM's Other PM's EUV EUV Co Co Patterning Related Si(C)P FDSOI Si(C)P FDSOI SiC SiC BEOL Air Air FEOL SiCO LaO SiCO LaO Starting Materials SiCN LT SiO SiCN L
Slide 11: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 11
Slide 12: ASM and New Materials
ASM AND NEW MATERIALS › ASM technology focuses on enabling new materials and new device integration roadmaps z 3D transistor formation (FinFET & beyond FinFET) z DRAM, Flash –planar and 3D NAND - and emerging memory z More than Moore / IoT applications (MEMS, Sensors, Power) › ALD (Atomic Layer Depo
Slide 13: ALD as Enabler of New Materials - Key Strengths of ALD
ALD AS ENABLER OF NEW MATERIALS - KEY STRENGTHS OF ALD Uniformity Step Coverage 42nm AlN 30.5 nm AlN 0.51% 3V 0.25% Full range 43nm Interface Control Composition Control Excellent Atomically composition engineered control for interfaces to ternary alloys; optimize leakage all ALD current, reliabilit
Slide 14: Critical ALD Supply Chain Components
CRITICAL ALD SUPPLY CHAIN COMPONENTS Fundamental Process Integrated Final Product Productivity Capability Performance Process Capability Pre-cursors Reactors High productivity tools Pre-cursor Fab facilities, Delivery, Valves pumps & abatement and Vessels | 14
Slide 15: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 15
Slide 16: ASM Products: ALD
ASM PRODUCTS ALD › Pulsar® XP z ALD for high-k z Cross-flow reactor z Solid source delivery system › EmerALD® XP Pulsar® XP z ALD for metal gates z Showerhead reactor EmerALD® XP | 16 16
Slide 17: FinFET Challenges: ALD Enables Further Scaling in 3D
FINFET CHALLENGES: ALD ENABLES FURTHER SCALING IN 3D Source: Intel • Materials properties and channel length must be uniform over fin height • Conformal coverage required • Aspect ratios increase going from 22nm to 14nm to 10nm • Æ ALD technology has become critical for HK and MG layers | 17
Slide 18: Extendibility of Hafnium Based Oxides
EXTENDIBILITY OF HAFNIUM BASED OXIDES chipworks chipworks chipworks chipworks 45nm HK first RPMG 32 nm HK last RPMG 28nm HK first RPMG 22nm HK last RPMG Planar FET Planar FET Planar FET FinFET chipworks 14nm HK last RPMG FinFET 16 nm HK last RPMG FinFET | 18
Slide 19: ASM Products: PEALD and PECVD
ASM PRODUCTS PEALD AND PECVD › XP8-DCM z High productivity single wafer tool for both PEALD and PECVD applications z Accommodates up to 8 chambers by DCM z PEALD and PECVD can be integrated on the same platform DCM (Dual Chamber Module) | 19
Slide 20: ALD Enabling Lithography: Spacer Defined Double/Quadruple Patterning
ALD ENABLING LITHOGRAPHY: SPACER DEFINED DOUBLE/QUADRUPLE PATTERNING Pitch: P ALD SiO2 on resist 80nm Hard Mask Etch Pitch: 1/2 P 40nm In-situ trimming 2nd ALD Spacer 9 Spacer Defined Double Patterning PEALD SiO2 Spacer (SDDP) with ALD in production since 3x nm DRAM and Flash 9 Spacer Defined Quadru
Slide 21: CD Uniformity Control
CD UNIFORMITY CONTROL Trimming SiO Deposition Arbitrary Units Arbitrary Units Cond A Cond B Cond C Position on wafer [mm] Position on wafer [mm] After lithography After trimming After SiO deposition & etch Dimension Dimension Dimension Critical Critical Critical Position on wafer Position on wafer P
Slide 22: Liners and Spacers for Beyond 15nm FinFETs
LINERS AND SPACERS FOR BEYOND 15nm FinFETs ALD SiO2 and Si3N4 permanent spacers z Low temperature (260 ~ 550 qC) z Conformal z High quality (low WER, low leakage current) 40nm pitch ALD SiO ALD SiN | 22
Slide 23: High Quality SiO
HIGH QUALITY SIO Single Wafer ALD › Conformal thickness deposition is necessary for high-AR trench › The film quality of the sidewall needs to be equal to that of top/blanket › Deliver required electrical performance Potential Applications: IO gate SiO Si Fin 4. FinFET I/O Transistor Gate Oxide Æ De
Slide 24: Metal Oxide Advanced Hard Mask for Patterning
METAL OXIDE ADVANCED HARD MASK FOR PATTERING ALD Mox Etching Hard Mask Photo Resist Mox z Low/Tunable stress capable z LT deposition: PR compatible z Extension of etch selectivity portfolio Dry Etch Rate by Gas B Dry Etch Rate by Gas A 50 50 40 40 (Arb. Units) (Arb. Units) 30 30 20 20 10 10 0 0 SiO
Slide 25: Advanced ALD Doping
ADVANCED ALD DOPING FinFET requires conformal doping Limitations of conventional doping techniques like beam line: Low conformality (beam directionality, shadowing effect) Silicon damage Shadowing effect ALD Doping Benefits Conformal & no silicon damage Ion beam Hard Mask SiO2 Si 50nm BSG 2n
Slide 26: ASM Products: Advanced Epitaxy
ASM PRODUCTS ADVANCED EPITAXY › Advanced transistors enabled with Intrepid® XP z Relaxed & strained epitaxy for Si, SiGe & Ge based finFETs through 5nm z Channel, Source/Drain stressor, contact & passivation cap layers › Integrated, low thermal budget pre-clean module z High quality pre-Epi surface
Slide 27: Epi Si:P Process
EPI Si:P PROCESS › Epitaxial SiP film for nMOS finFETs › Key Challenges z Good Epi process selectivity z High P doping levels (>1E21 at/cm2) for lower resistivity. • P concentration requirement increases at each node. z Thickness and dopant uniformity and repeatability z Low defects z Throughput, es
Slide 28: Epi Layers for Power Devices
EPI LAYERS FOR POWER DEVICES B implant B implant PR mask B implant B implant PR mask 4th layer Epi Multiple epi steps 3rd layer Epi 2nd layer Epi 1st layer Epi 1st layer Epi N+ Drain N+ Drain › Power devices require multiple & thick Epitaxial films to withstand high breakdown voltages (600V ~ 800V)
Slide 29: ASM Products: Furnace CVD/Diffusion/Batch ALD
ASM PRODUCTS FURNACE CVD /DIFFUSION /BATCH ALD › A412 PLUS z Dual boat/dual reactor system z Clustering of different applications between reactors possible – only vertical furnace in the market with this capability z Up to 150 product wafer load size z Stocker design with integrated N2-FOUP purge an
Slide 30: A400/A412 Furnace - Innovation
A400/A412 FURNACE - INNOVATION Example 1: Voidless silicon gapfill. Example 2: Etch stop layers (ESL) › Voidless gapfill of rectangular trenches is › Future nodes with complex patterning a challenge for technologies beyond 10nm require advanced ESL with high etch › Standard silicon gap fill: selecti
Slide 31: Wafer Fab Equipment Forecast
WAFER FAB EQUIPMENT FORECAST Wafer Fab Equipment by Node Advanced nodes: market 40 segments with high expected growth 35 7 nm and below 30 10 nm 25 14 nm 22 nm $B 20 32 nm 45 nm 15 65nm & above 10 5 0 2014 2015 2016 2017 2018 2019 2020 Gartner July, 2016 Key customer ALD penetrations in advanced nod
Slide 32: Outline
OUTLINE › Exponentials in the industry › New Materials and 3D: Moore’s law enablers › ASM and New Materials • ALD as enabler of new materials • ASM New Materials development strategy • ALD supply chain components › ASM Products and selected applications › Summary and Conclusions | 32
Slide 33: Summary and Conclusions
SUMMARY AND CONCLUSIONS › Scaling is increasingly enabled by new materials and 3D technologies › ALD enables new materials and 3D › Hafnium based ALD high-k gates on ASM Pulsar® extendable for 4 device generations › ALD patterning films portfolio extended with metal oxide hardmasks › ALD Doped oxide
Slide 34: Drive Innovation: Deliver Excellence
DRIVE INNOVATION : DELIVER EXCELLENCE
ASM International — Semicon West 2016 Analyst and Investor Technology Seminar on 6ix