Intelliepi Inc. (cayman) · TPEX:4971
Intelliepi Inc. (cayman) — IntelliEPI — C/S Outlook '99 (March 1999)
9 slides from Intelliepi Inc. (cayman)'s conference presentation, Mar 1, 1999
Slide 1: MBE, Production Ready? Sensor-Based MBE For PHEMT Growth
MBE, Production Ready? Sensor-Based MBE For PHEMT Growth Dr. Yung-Chung Kao IntelliEPI, President/CEO Intelligent Epitaxy Technology, Inc. Dallas, Texas OUTLINE • Motivation and Overview • Current “Near” Production MBE Status • How to Make Current MBE Production Ready? • Sensor-Based MBE and Impacts
Slide 2: Overview / Current MBE
OVERVIEW • A production system has to be based on commercially available MBE systems • Current system hard to retrofit • Add-on instruments requirements –Non-intrusive, robust, compatible with rotation –Real-time information of system and wafer states –Simple setup/maintenance, outside growth chambe
Slide 3: How to Make MBE Production Ready?
How to Make MBE Production Ready? • Real-time non-intrusive, robust sensors to monitor growth parameters: –Thickness --> pyrometry, atomic absorption –Composition --> atomic absorption –Surface roughness --> laser light scattering (LLS) –Shutter actions --> atomic absorption, reflection mass spec (R
Slide 4: Case Study: Selective-Etch PHEMT
Sensor-Based MBE Case Study: Selective-Etch PHEMT Source Gate Drain n+ GaAs AlAs n+ GaAs Critical Parameters nGaAs • AlGaAs thickness n AlGaAs – No trimming for selective etch PHEMT process Undoped InGaAs Channel • Si Pulse doping/spacer n AlGaAs – Control I-V characteristics AlAs/GaAs Superlattice
Slide 5: Case Study: PHEMT Optical-based Flux Monitor
Sensor-Based MBE Case Study: PHEMT Optical-based Flux Monitor (atomic absorption) 6.0 60 5.0 50 Thickness (Å) Absorption (%) 4.0 gallium 40 3.0 30 shutter 2.0 open shutter 20 1.0 open 10 0.0 0 0 10 20 30 40 50 60 70 time (sec) • Measure atomic absorption of molecular beam flux during shutter opening
Slide 6: MBE: PHEMT Surface roughness monitored by laser light scattering
Sensor-Based MBE: PHEMT Surface roughness monitored by laser light scattering 40000 4.00E-11 As Ga and As REMS Sig. (a.u.) 35000 3.50E-11 30000 3.00E-11 *surface smoothens after LLS Signal (a.u.) 25000 Rough PHEMT V/III ratio increased 2.50E-11 20000 2.00E-11 15000 1.50E-11 10000 1.00E-11 5000 Smoot
Slide 7: Case Study: PHEMT Shutter Actions by REMS
Sensor-Based MBE Case Study: PHEMT Shutter Actions by Reflection Mass Spectrometry (REMS): 1.20E-11 Ga REMS Sig. (a.u.) Ga (V926) 1.00E-11 Ga signal of 20x GaAs/AlAs superlattice 8.00E-12 6.00E-12 4.00E-12 2.00E-12 0.00E+00 1.20E-11 1.00E-11 Ga (V927) Ga shutter failure recorded by REMS Ga REMS Sig.
Slide 8: Impact to Devices & Processing / Conclusion
Impact to Devices & Processing For advanced epi-devices such as selective-etch PHEMTs: • Device performance pre-determined by material growth: – Doping density, layer thickness/composition uniformity – Defect density and surface roughness – Run-to-run reproducibility • Material growth controls proce
Slide 9: IntelliEPI: A Merchant MBE Company
IntelliEPI : A Merchant MBE Company IntelliEPI: Established in Sept. 1998 in Dallas, TX • Focus on MBE for PHEMTs, HBTs on GaAs and InP • First 4x4” commercial system to be delivered in May, 2nd 4x4” in 4Q, 99 • All systems equip with various sensor ports • Intelligent sensors facilitate low cost ep