Everspin Technologies, Inc. · NASDAQ:MRAM

Everspin Technologies — Investor Presentation (November 2012)

20 slides from Everspin Technologies's investor presentation, November 2012

  1. Slide 1: Everspin Introduces The 64Mb DDR3 ST-MRAM

    Everspin Introduces The 64Mb DDR3 ST-MRAM November 2012

  2. Slide 2: What we're announcing

    ST-MRAM What we’re announcing • Everspin debuts first Spin-Torque MRAM for high performance storage systems,  The EMD3D064M - 64Mb DDR3 ST-MRAM A new type of high performance and ultra-low latency memory that will transform storage architecture A performance-optimized Storage Class Memory (SCM) t

  3. Slide 3: ST-MRAM Product Overview

    ST-MRAM Product Overview 64Mb DDR3 ST-MRAM • Non-volatile 64Mb DDR3 • DDR3-1600 ST-MRAM • 16Mbx4, 8Mbx8, and 4Mbx16 configurations • Supports Standard DDR3 SDRAM Features • No refresh required • Burst length: 8 (programmable Burst Chop of 4) • DDR3 SDRAM Standard FBGA Package Pinout: • VDD = 1.5V +/

  4. Slide 4: Building the ST-MRAM Eco System

    ST-MRAM Building the ST-MRAM Eco System • FPGA Evaluation Boards  Using DDR3 ST-MRAM DIMMs  DDR3 ST-MRAM controller IP  Enabling Memory Subsystems  Enabling Storage Subsystems 4

  5. Slide 5: Why it's needed

    ST-MRAM Why it’s needed MORE DATA + MORE USERS + INSTANT ACCESS Scalability Issues: Application Performance degrading Faster & consistent data storage access is needed to deliver acceptable performance 5

  6. Slide 6: What the industry is saying

    ST-MRAM What the industry is saying • Three new low latency memories on the horizon:  Phase Change Memory, Memristor and Spin-Torque MRAM • Processor architectures & filing systems need dramatic redesign to take advantage of new NVM technologies • Systems must be ready for low latency NVM in 3-5 ye

  7. Slide 7: Bifurcation of Moore's Law

    ST-MRAM Bifurcation of Moore’s Law • Continuous demand for exponential cost declines in computational power and storage density • Radical advances in memory density & performance will relieve processor memory performance bottleneck • Processor chips dominated by memory, not logic • Long wait time wh

  8. Slide 8: Compute needs ultra-low latency NVM

    ST-MRAM Compute needs ultra-low latency NVM NAND improved storage I/O performance & latency BUT still several orders of magnitude latency GAP CPU RAM MRAM NAND DISK TAPE latency (ns) 10-1 100 101 104 106 109 ST-MRAM is closest to RAM and to high volume mass production 8

  9. Slide 9: Everspin – The MRAM Company

    ST-MRAM Everspin – The MRAM Company • MRAM - Magnetic Random Access Memory  Fastest non-volatile memory with unlimited endurance • Only company to have commercialized MRAM • Established 2008, 100%+ annual revenue growth • Fundamental & essential MRAM IP  600+ Patents & Applications WW, 220+ US Pat

  10. Slide 10: Our Customers

    ST-MRAM Our Customers MRAM used as write journal for RAID Storage Power fail recovery increasing system reliability & uptime Recognized Everspin for Perfect MRAM Quality 250k+ systems with no reported failures to-date Critical Storage for Industrial Computing Boards Robust & reliable non-volatile me

  11. Slide 11: MRAM Adoption Accelerating

    ST-MRAM MRAM Adoption Accelerating 7.0M+ 500+ 200+ 100+ 100+ MRAM MRAM MRAM MRAM MRAM Shipments Customers Design Wins(1) Applications Products 16 Everspin Toggle MRAM 14 Cumulative Shipments (Mu) 13M 12 * Projections 10 8 7M 6 4 2 0 (1) New Design Wins in CY2012

  12. Slide 12: Spin-Torque – Next Generation MRAM

    ST-MRAM Spin-Torque – Next Generation MRAM Current Toggle MRAM uses a magnetic field for switching Limits scaling due to constant magnetic field Next generation MRAM enables scaling to Gb densities Everspin on track to deliver industry’s first ST-MRAM Toggle Write Spin-Torque Write 12

  13. Slide 13: Delivering 10x better Price/Performance

    ST-MRAM Delivering 10x better Price/Performance Cloud Storage Needs:  More content & users, instant access  Better response times from storage  Predictable balanced performance Nanosecond-class MRAM Storage 500x Performance… Key Metrics NAND MRAM Density 64Gb 1Gb Latency 50us 45ns 4kB Write IOPS

  14. Slide 14: Delivering 100x Power/Performance

    ST-MRAM Delivering 100x Power/Performance Data Center needs:  Number of servers & CPU cores exploding  Better bandwidth & IOPS to handle Big Data  More performance @ less power to scale up High Performance, Power-Efficient MRAM Storage 500x Performance… Key Metrics NAND MRAM Density 64Gb 1Gb Powe

  15. Slide 15: Faster, more reliable Enterprise Storage

    ST-MRAM Faster, more reliable Enterprise Storage • Enterprise Storage: Can’t lose data if power fails! • Historically using batteries/caps to protect data in RAM Areas of concern DRAM with battery/caps Spin-Torque MRAM Write performance Temporary persistent cache Truly persistent write cache Complex

  16. Slide 16: Storage Solutions craving ST-MRAM

    ST-MRAM Storage Solutions craving ST-MRAM ST-MRAM complements solid state & magnetic storage Improved response time due to low latency & high bandwidth ST-MRAM as Buffer Memory MRAM instead of low density DRAM Better performance & reliability ST-MRAM as I/O & Network Cache MRAM instead of NV-DRAM Be

  17. Slide 17: Multi-billion dollar market opportunity

    ST-MRAM Multi-billion dollar market opportunity 17

  18. Slide 18: Advancing Storage Architecture

    ST-MRAM Advancing Storage Architecture • Storage OEMs are tuning storage to application needs  Capacity, Performance, Power, Uptime/Service and Reliability  OEMs need to balance storage capacity and performance  HDD leveraged as capacity optimized data storage Benefits : Lowest cost per GB/TB fo

  19. Slide 19: Improving Metric for Data Centers

    ST-MRAM Improving Metric for Data Centers • Content Anywhere, Anytime, on Any Device  Drives a new paradigm for data center storage • CIOs rethinking storage to deliver more performance:  Top level considerations driving decisions Lower price per transactions per minute (TPM/$) More storage I/Os

  20. Slide 20: ST-MRAM

    ST-MRAM 20

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