Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (November 2024)
37 slides from Asml Holding Nv's investor day presentation, Nov 18, 2024
Slide 1: EUV Products and Business opportunity
Public Peter Vanoppen EUV Products and Business opportunity ASML Investor Day Veldhoven, The Netherlands November 14, 2024 Executive Vice President and Head of Business Line 0.55 NA EUV Small Talk 2024 Teun van Gogh Executive Vice President and Head of Business Line 0.33 NA EUV Exhibit 99.4
Slide 2: Key messages
Public Key messages • EUV has reached high-volume manufacturing maturity providing a solid foundation for continued innovation. • The NXE:3800E offers a 38% improvement in productivity and 13% in overlay, with additional productivity and overlay improvements planned for the NXE:4000F and beyond. • T
Slide 3: EUV lithography enabling resolution improvement of 2 orders of magnitude
Public 13.5 EUV Wavelength [nm] 436 g-line 365 i-line 248 KrF 193 ArF and Immersion EUV lithography enabling a resolution improvement of 2 orders of magnitude to enable the most advanced chip manufacturing Page 3 R e s o lu ti o n [ n m ] 10 100 1000 1 1985 1990 1995 2000 2005 2010 2015 2020 2025 >2
Slide 4: 0.33 NA EUV systems exceeding 93.5% worldwide average availability
Public Page 4 20222018 24Q3: 93.5% 20202019 2021 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 2023 Q1 Q2 Q3 Q4 Q1Q4Q3 2024 Q2 W o rl d w id e A v a il a b il it y [ % ] 18Q4: 64% 19Q4: 82% 20Q4: 84% 21Q4: 87% 22Q4: 90% 23Q4: 93%Number of systems shipped (cumulative NXE:3400B/C, NXE:3600D, NXE:380
Slide 5: NXE productivity steadily increasing over the years
Public NXE productivity steadily increasing over the years NXE:3800E enabling the next big step in productivity for our customers Page 5 3500 3000 2500 2000 1500 1000 500 0 2018 20202019 2021 2022 2023 W a fe rs p e r d a y ( W p D ) 2024(Q3) 175 150 125 100 75 50 25 0 W a fe rs p e r h o u r (W p H
Slide 6: NXE:3800E improves productivity (+38%) and overlay by 13%
Public NXE:3800E improves productivity from 160 to 220 WpH (+38%) and overlay by 13% to enable EUV on 2 nm node Page 6 Higher acceleration Reticle Stage Lower aberration Projection Optics optimized for stability at higher power 500W EUV Source operating at higher tin droplet frequency and with new t
Slide 7: NXE:3800E dedicated chuck overlay at 220 WpH
Public30-Sep-2024 | 0.33 NA EUV systems for high volume manufacturing. 13215-2 | slide 7 Dedicated Chuck Overlay at 220 WpH NXE:3800E – Dedicated chuck overlay 0.6 nm at 220 WpH, with spec at 0.8 nm Matched Machine Overlay shows expected performance improvement 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Matche
Slide 8: EUV customers are installing NXE:3800E at their R&D and HVM sites
Public EUV customers are installing NXE:3800E at their R&D and HVM sites from 2024 NXE:3800 installed at DRAM, LOGIC and Foundry customers Page 8 JP TW KR US November 14, 2024
Slide 9: 0.33 NA EUV roadmap: NXE:3800E to NXE:4000F and beyond
Public Page 9 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Node (resolution) 0.7 nm2 nm 1.x nm 1 nm3 nm 0.5 nm 0.33NA 13 nm resolution NXE:3600D 1.1 nm | 160 WpH NXE:3800E MMO 0.9 nm | 220 WpH NXE:4000F MMO <0.8 nm | ≥ 250 WpH NXE:4200G ≥ 280 WpH MMO = Matched-Machine Overlay (0.33NA throu
Slide 10: Lowering the cost of good printed transistors
Public Good printed transistors Resolution ProductivityAccuracyPatterning Yield × × × Operational cost Environmental costSystem cost Lifetime/ + 1 Ton CO2 = 200 EUR + Total lithography cost ASML will innovate in EUV to lower the cost of good printed transistors Our portfolio with 0.33 NA, 0.55 NA an
Slide 11: High NA EUV opportunity starts now
Public High NA EUV opportunity starts now as 0.33 NA EUV transitions to multi-patterning on <26nm pitch critical layers SP: Single Patterning, DP: Double Patterning, QP: Quadruple Patterning Source: 1Luc van den Hove, IMEC , ITF May 21, 2024 0 5 10 15 30 20 Single Expose 0.55 Double Expose 0.55 0.55
Slide 12: High NA EUV – high-resolution, high-contrast imaging technology
Public High NA EUV – Introducing high-resolution, high-contrast imaging technology The latest addition to SML’s holistic lithography roadmap High NA EUV Lithography • Best-in-class overlay performance • High-contrast imaging for LCDU gain • Single expose vs. multi- patterning • High contrast imaging
Slide 13: High NA EUV technical values and customer benefits
Public High NA EUV technical values and customer benefits Page 13 Customer benefitsHigh NA technical values Less mask = less patterning process defects Process simplification, improved edge placement error Reduced defect density by Patterning cost reduction by Enabling single patterning (from multi
Slide 14: A decade of development leading to the joint imec ASML Lab
Public A decade of development leading to the opening of the joint imec ASML Lab in June 2024 France: milling body US: short stroke reticle stage Netherlands: 700m2 High-NA assembly building openedFrance: New facilities for large frame welding Germany: New facilities for optic metrology Module integ
Slide 15: imec / ASML High NA Lab
Public Litho Cluster: system install ongoing and track qualified High NA scanner Metrology Room Track IMEC / ASML High NA Lab supporting future insertion High NA lab provides early access to all EUV customers Page 15 Public
Slide 16: Customers have exposed critical layers in High NA EUV lab
Public Customers have exposed critical layers in High NA EUV lab & verified the benefits Progress on High NA recognized and its importance in enabling cost effective scaling acknowledged Page 16 Mark Philips (Intel) reports on High NA at SPIE photomask technology, September 2024 In total >10,000 waf
Slide 17: Over 10,000 wafers exposed on High NA systems
Public In total >10,000 wafers exposed on the high NA systems including >1300 DRAM and Foundry customer wafers in the lab, expecting to reach ~2000 wafers by the end of the year 2000 1750 1500 1250 1000 750 500 500 250 0 Q2 Q3 Q4 Today # la b w a fe rs e x p o s e d 2024 DRAM FOUNDRY Customers have
Slide 18: High NA EUV high-contrast imaging increases process window
Public High NA EUV high-contrast imaging increases process window while reducing dose requirements and patterning defects resulting in higher productivity and better yield x-position [nm] threshold NA=0.55 x-position [nm] A e ri a l im a g e i n te n s it y [ a u ] NA=0.33 threshold 0.33 0.55 Page 1
Slide 19: High NA EUV offers new 2D design opportunity
Public High NA EUV offers a new design opportunity going for 2D design layouts This enables higher logic cell density (hence scaling) and optimized routing of interconnect layers reducing the total number of metal layers Page 19 0.33 NA 0.55 NA 0.55 NA resolution and contrast enables single expose o
Slide 20: High NA EUV contact hole exposures (DRAM layer)
Public High NA EUV exposures on contact hole patterns (DRAM layer) through pitch show higher contrast, resulting in improved LCDU and reduced dose Page 20 P40 P36 P34 P32 P30 0.33 NA 0.55 NA LCDU Dose LCDU Dose 2.4 nm 2.6 nm 2.7 nm 3.0 nm 3.6 nm 63 mJ/cm² 66 mJ/cm² 66 mJ/cm² 72* mJ/cm² 73* mJ/cm² Ba
Slide 21: High NA EUV contact hole exposures (DRAM layer)
Public High NA EUV exposures on contact hole patterns (DRAM layer) through pitch show higher contrast, resulting in improved LCDU and reduced dose Page 21 P40 P36 P34 P32 P30 0.33 NA 0.55 NA LCDU Dose LCDU 2.4 nm 2.6 nm 2.7 nm 3.0 nm 3.6 nm Based on 40nm CAR P28 1.4 nm 1.5 nm 1.6 nm 1.7 nm 2.0 nm 48
Slide 22: High NA EUV contact hole exposures (DRAM layer)
Public High NA EUV exposures on contact hole patterns (DRAM layer) through pitch show higher contrast, resulting in improved LCDU and reduced dose Page 22 P40 P36 P34 P32 P30 0.33 NA 0.55 NA LCDU Dose LCDU 2.4 nm 2.6 nm 2.7 nm 3.0 nm 3.6 nm Based on 40nm CAR P28 1.4 nm 1.5 nm 1.6 nm 1.7 nm 2.0 nm 48
Slide 23: LOGIC P19: High NA single exposure ~35% cost benefit
Public LOGIC [P19]: High NA EUV single exposure will enable ~35% cost benefit and significant process simplification compared to multi patterning 0.33 NA EUV Page 23 Exposure 0.55 NA Litho etch 0.33 NA Multi Patterning 0.55 NA Single Patterning Exposure 0.33 NA 1 Exposure 0.33 NA 2 Exposure 0.33 NA
Slide 24: LOGIC P30: ~20% cost benefit moving to single exposure
Public LOGIC [P30]: ~20% cost benefit and process simplification moving from double exposure 0.33 NA EUV to single exposure High NA EUV Page 24 Center to center 30 nm Random Via 0.33 NA Multi Patterning 0.55 NA Single Patterning Exposure 0.55 NA 1 High NA single exposure image Exposure 0.33 NA 1 Exp
Slide 25: LOGIC P36: Higher contrast enables lower exposure dose
Public LOGIC [P36]: Higher contrast enables lower exposure dose at better imaging quality resulting in higher productivity and lower cost Page 25 Single exposure comparison (Logic Via layer, 18 nm holes, pitch 36 nm) 0.33 NA CD uniformity (LCDU) NXE EXE Deformed Contact Holes Defect free Contact Hol
Slide 26: DRAM 15nm contact holes: single exposure with High NA
Public DRAM 15nm contact holes: High NA enables high productivity single exposure Moving from triple exposure (2x 0.33NA EUV +1x DUV) to single exposure 0.55 NA EUV Page 26 CD SEM picture: 15 nm contact holes (after development) 0.33 NA + DUV Multi Patterning 0.55 NA Single Patterning Exposure 0.33
Slide 27: DRAM contact holes: higher contrast enables lower dose
Public DRAM 15 nm contact holes: Higher contrast of High NA enables lower exposure dose at better imaging quality, resulting in higher productivity and lower cost Page 27 Single exposure comparison (DRAM capacitor layer, 15 nm holes) 0.33 NA CD uniformity (LCDU) NXE EXE Pupil for 0.33NA exposure ena
Slide 28: High NA half field exposure requires stitching for large die
Public High NA half field exposure requires stitching for large die Engineering solutions available to enable at resolution stitching Page 28 14nm lines (28nm pitch) 12nm lines (24nm pitch) Initial EXE exposures show the feasibility of stitching A and B field together 0.33NA Full Field 0.55NA Half F
Slide 29: EUV product roadmap enabling affordable scaling
Public EUV product roadmap enabling affordable scaling Towards high productivity platform for 0.33NA EUV, 0.55NA EUV and potentially hyper NA in the next decade Page 29 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Node (resolution) 0.7 nm2 nm 1.x nm 1 nm3 nm 0.5 nm 0.55 NA 8 nm resolution
Slide 30: High productivity common platform with modular frame architecture
Public High productivity common platform is enabled by going to one modular frame architecture Modular Machine Support Frame allows for product mix flexibility in fabs • Common Source • Common interfaces/modules • Common High Transmission High Flexible Illuminator • Shared innovations in stage accel
Slide 31: EUV source power continues to scale to >1000W
Public EUV source power continues to scale with opportunity to achieve >1000W 740W EUV power demonstrated - measures identified to reach >1000W in the future EUV source power scaling 2010 2015 2020 2025 0 100 200 300 400 500 600 E U V -s o u rc e p o w e r [W a tt s ] Products 2030 700 800 900 1000
Slide 32: High transmission optics enable a step in productivity
Public High transmission optics for 0.33 NA and 0.55 NA enable a significant step in productivity High transmission optics are enabled on the high productivity common platform Page 32 0.55 NA Flexible illuminator: ▪ Enable ~1.4x increase in transmission ▪ Productivity scaling of productivity towards
Slide 33: Innovation in optics, source and stages scales EUV productivity
Public Innovation in optics, source and stages enables scaling of EUV productivity Single patterning 0.55 NA EUV will outperform double patterning 0.33 NA EUV in productivity Page 33Graph shows product name / throughput in WpH 500 550 450 400 350 300 250 T h ro u g h p u t [W p H ] 200 150 100 50 0
Slide 34: EUV installed base will grow, >20 years lifetime anticipated
Public EUV Installed Base will further grow in coming years, >20 years lifetime anticipated ASML supports customers to optimize output of their 0.33 NA EUV & 0.55 NA EUV installed base over lifetime Page 34 Availability (Service) Life cycle extension (Service) Upgrades Cost per Exposure (Service) In
Slide 35: Key messages
Public Key messages • EUV has reached high-volume manufacturing maturity providing a solid foundation for continued innovation. • The NXE:3800E offers a 38% improvement in productivity and 13% in overlay, with additional productivity and overlay improvements planned for the NXE:4000F and beyond. • T
Slide 36: Forward Looking Statements
Public Forward Looking Statements This document and related discussions contain statements that are forward-looking within the meaning of the U.S. Private Securities Litigation Reform Act of 1995, including statements with respect to our strategy, plans and expected trends, including trends in end m
Slide 37: Thank you
Public THANK YOU