Silvaco Group, Inc. · NASDAQ:SVCO
Silvaco — Technical Presentation (November 2012)
42 slides from Silvaco's technical presentation, November 2012
Slide 1: VICTORY Process
VICTORY PROCESS Full Physical 3D Semiconductor Simulator Etching and Deposition Simulation
Slide 2: VICTORY Process – 3D Process Simulator
VICTORY Process – 3D Process Simulator VICTORY Process provides the capability to simulate comprehensive full process flows Etching, Deposition Oxidation, Stress Implantation Diffusion Self explanatory process flow description Open interface for modeling Model parameters and functions c
Slide 3: Level Set Framework
VICTORY Process – Level Set Framework The structure is represented as a set of implicit surfaces Hierarchical Cartesian meshes are used to improve the accuracy around critical areas Support for automatic and manual mesh refinement Full Physical 3D Semiconductor Simulator -3-
Slide 4: Level Set Framework
VICTORY Process – Level Set Framework Very stable surface propagation algorithms Automatic void detection Avoids the problem of loops creation and correction Full Physical 3D Semiconductor Simulator -4-
Slide 5: Etching / Deposition Modes
VICTORY Process – Etching / Deposition Modes Geometrical Mode Physical Mode +Numerical error is limited by the mesh +Simulates real physical processes size only +Accurately handles complex shading +Orders of magnitude faster than and visibility effects physical simulation of corresponding +Comprehen
Slide 6: Geometrical Mode
VICTORY Process – Geometrical Mode Comprehensive mask support GDSII – format masks lay – format masks (MaskViews) Definition of mask polygons inside the processing deck Mask variations via the deck (shrink and expand) Selection of a simulation window Full Physical 3D Semiconductor Simulat
Slide 7: Geometrical Mode – Lithography
VICTORY Process – Geometrical Mode Lithography Calculation of aerial images Pattern transfer of aerial images aerial image transferred pattern mask layer Full Physical 3D Semiconductor Simulator -7-
Slide 8: Geometrical Mode – Geometrical Etching
VICTORY Process – Geometrical Mode Geometrical Etching Idealized directional mask pattern or image transfer Pattern transfer with tilted sidewalls and rounded corners with tilted sidewalls ideal pattern transfer and rounded corners with tilted sidewalls Full Physical 3D Semiconductor Simulator
Slide 9: Geometrical Mode – Geometrical Etching
VICTORY Process – Geometrical Mode Geometrical Etching Idealized wet and dry etching Selective and non-selective mode wet etching initial structure dry etching wet selective etching Full Physical 3D Semiconductor Simulator -9-
Slide 10: Geometrical Mode – Geometrical CMP
VICTORY Process – Geometrical Mode Geometrical CMP Idealized planarization Selective and non-selective mode Non-Selective Selective Full Physical 3D Semiconductor Simulator - 10 -
Slide 11: Geometrical Mode – Geometrical Deposition
VICTORY Process – Geometrical Mode Geometrical Deposition Idealized vertical resists or material regions defined by a mask Idealized conformal deposition Deposition of features with tilted sidewalls and rounded corners Planar mode to partially fill holes Conformal Deposition Planar Depositi
Slide 12: Geometrical Mode - Summary
VICTORY Process – Geometrical Mode - Summary Set of models for fast structure manipulation Based on idealized processing steps Used for fast structure prototyping and to create the initial shapes for subsequent physical analysis Full Physical 3D Semiconductor Simulator - 12 -
Slide 13: Reactor-Scale vs. Feature-Scale
VICTORY Process – Physical Mode Reactor-Scale vs. Feature-Scale The numerical engine of VICTORY Process only operates on the feature scale level Ballistic transport within the simulation domain is assumed Constant particle properties within the simulation domain are assumed Particle-particle
Slide 14: Physical Mode – Numerical Engine and Open Model Library
VICTORY Process – Physical Mode Numerical Engine : Calculates the amount of reactants reaching the surface from the reactor domain Takes into account secondary effects Re-deposition of removed material Reflection of reactants Calculates the surface propagation Open Model Library (accessi
Slide 15: Physical Mode – Boundary Conditions
VICTORY Process – Physical Mode Boundary Conditions : The structure is symmetrically and periodically extended in X and Y directions. This is necessary to properly take into account secondary effects. The number of 'reflections' depends on the desired redeposition accuracy Shading effects and
Slide 16: Etching Models without Particle Flux
VICTORY Process – Physical Mode Etching Models without Particle Flux Particle flux is not taken into account No visibility and shading effects are taken into account Selective etching capability Isotropic Etching Model Anisotropic Etching Model selective isotropic etching initial structu
Slide 17: Deposition Models without Particle Flux
VICTORY Process – Physical Mode Deposition Models without Particle Flux Particle flux is not taken into account No visibility and shading effects are taken into account Selective deposition capability Conformal Deposition Model Non-conformal Deposition Model n epo sitio l ec tive D o r ma
Slide 18: Models with a Single Primary Particle
VICTORY Process – Physical Mode Etching and Deposition Models with a Single Primary Particle Only the flux of a single particle coming from the reactor is taken into account Full consideration of visibility and shading effects The spacial velocity distribution of the particles coming from th
Slide 19: Etching Models, Surface Reflection Neglected
VICTORY Process – Physical Mode Etching Models with a Single Primary Particle where Surface Reflection is neglected For these models a high sticking efficiency is implicitly assumed Hence surface reflection can be neglected Selective etching capability The etch rate is a linear function of
Slide 20: Directional Etching Model
VICTORY Process – Physical Mode Directional Etching Model Is a single primary particle etching model The velocity vector of all particles coming from the reactor is identical and by default perpendicular to the plane wafer surface initial structure selective directional etching Full Physical 3
Slide 21: Primary Etching Model
VICTORY Process – Physical Mode Primary Etching Model Is a single primary particle etching model The spacial velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution Width of the distribution function may be used as a param
Slide 22: RIE Etching Model
VICTORY Process – Physical Mode RIE Etching Model Is a single primary particle etching model The two physical particles (ion and neutral) are superimposed in one flux distribution This is possible because secondary fluxes are neglected and identical surface interaction (reaction) propertie
Slide 23: RIE Etching Model
VICTORY Process – Physical Mode RIE Etching Model The spacial velocity distribution of the ions is highly focused Von Mises spacial velocity distribution is applied The standard deviation is used as a parameter The spacial velocity distribution of the neutral is isotropic Ratio between th
Slide 24: RIE Etching Model
VICTORY Process – Physical Mode RIE Etching Model initial structure etching with RIE model profile sensitivity to RIE model parameters (ion focus, ion/neutral ratio) Full Physical 3D Semiconductor Simulator - 24 -
Slide 25: Deposition Models, Surface Reflection Neglected
VICTORY Process – Physical Mode Deposition Models with a Single Primary Particle where Surface Reflection is neglected For these models a high sticking efficiency is implicitly assumed Hence surface reflection can be neglected Selective deposition is possible Directional Deposition Model
Slide 26: Directional Deposition Model
VICTORY Process – Physical Mode Directional Deposition Model Is a single primary particle deposition model The velocity vector of all particles coming from the reactor is identical and by default perpendicular to the plane wafer surface Particle direction may be used as a parameter initial s
Slide 27: Primary Deposition Model
VICTORY Process – Physical Mode Primary Deposition Model Is a single primary particle deposition model The spacial velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution Width of the distribution function may be used as a
Slide 28: Ion Beam Deposition Models
VICTORY Process – Physical Mode Ion Beam Deposition Models Single primary particles are considered Static and rotating beams Beam can temporarily be switched off during rotation Ideally focused and Gaussian shape Beam with divergence Beam shape accessible via open model library Mater
Slide 29: Ion Beam Deposition Models
VICTORY Process – Physical Mode Ion Beam Deposition Models initial structure ion beam deposition with single directional beam Full Physical 3D Semiconductor Simulator - 29 -
Slide 30: Etching Models, Surface Reflection Taken into Account
VICTORY Process – Physical Mode Etching Models with a Single Primary Particle where Surface Reflection is taken into account Selective etching capability Material specific sticking efficiencies The etch rate is a linear function of the local particle flux Re-emission Etching Model Full Phy
Slide 31: Re-emission Etching Model
VICTORY Process – Physical Mode Re-emission Etching Model Is a single particle etching model Spacial primary velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution Width of the distribution function may be used as a param
Slide 32: Re-emission Etching Model
VICTORY Process – Physical Mode Re-emission Etching Model selective etching with initial structure re-emission etching model Effect of varying sticking efficiencies Full Physical 3D Semiconductor Simulator - 32 -
Slide 33: Etching Models with Emission of Etched Material
VICTORY Process – Physical Mode Etching Models with a Single Primary Particle where Emission of etched material is taken into account Ion Milling Etching Models Static and rotating beams Beam can be temporarily switched off during rotation Ideally focused or Gaussian beam shape Beam with
Slide 34: Ion Milling Etching Models
VICTORY Process – Physical Mode Ion Milling Etching Models beam direction initial structure Static beam Redeposition of alloy Selective deposition efficiency after ion milling Material specific mill rate functions Full Physical 3D Semiconductor Simulator - 34 -
Slide 35: Deposition Models, Surface Reflection Taken into Account
VICTORY Process – Physical Mode Deposition Models with a Single Primary Particle where Surface Reflection is taken into account Selective deposition capability The deposition rate is a linear function of the local particle flux Reemission Deposition Model Full Physical 3D Semiconductor Simul
Slide 36: Reemission Deposition Model
VICTORY Process – Physical Mode Reemission Deposition Model Is a single particle deposition model Spacial primary velocity distribution of the particles can vary from an isotropic distribution (default) to a highly focused distribution Width of the distribution function may be used as a
Slide 37: Reemission Deposition Model
VICTORY Process – Physical Mode Reemission Deposition Model initial structure vary sticking efficiency deposition with reemission model Full Physical 3D Semiconductor Simulator - 37 -
Slide 38: Advanced Etching Models with Multiple Primary Particle
VICTORY Process – Physical Mode Advanced Etching Models with Multiple Primary Particle Multiple primary particles Some particles may be reflected Material specific sticking efficiencies Material specific surface reaction properties IECE (Ion Enhanced Chemical Etching) Model Full Physical
Slide 39: Ion Enhanced Chemical Etching Model
VICTORY Process – Physical Mode Ion Enhanced Chemical Etching Model Two particle model where ions and neutral coming from the reactor are taken into account Neutrals – Chemically active, uncharged particles Ions – Accelerated charged particles Neutrals are chemically reacting at the surface
Slide 40: Ion Enhanced Chemical Etching Model
VICTORY Process – Physical Mode Ion Enhanced Chemical Etching Model e.g Silicon Etching in SFx Plasma 1. The neutrals (F) chemically attach themselves SiFx removed to Si surface (dangling bonds) Ions by ions F 2. Newly formed SiFx molecules cover the SiFx removed by desorption surface preventing
Slide 41: Ion Enhanced Chemical Etching Model
VICTORY Process – Physical Mode Ion Enhanced Chemical Etching Model Ions decrease the surface coverage at the bottom of the trench → Trench aspect ratio increases with ion energy Full Physical 3D Semiconductor Simulator - 41 -
Slide 42: Summary
VICTORY Process – Summary VICTORY Process is a powerful tool for simulating 3D structure transformations by etching and deposition processes Command deck syntax based on technological processes Very robust numerical algorithms for geometrical transformations Ability for rapid structure proto
Silvaco Group — Technical Presentation (November 2012) on 6ix