Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (September 2005)
46 slides from Asml Holding Nv's investor day presentation, Sep 20, 2005
Slide 1: Leading lithography products and technology
Leading lithography products and technology Martin van den Brink Executive Vice president Analyst Day, 20 September 2005 <file name> <version 00> <author>
Slide 2: Safe Harbor
Safe Harbor “Safe Harbor” Statement under the U.S. Private Securities Litigation Reform Act of 1995: the matters discussed in this document may include forward-looking statements that are subject to risks and uncertainties including, but not limited to: economic conditions, product demand and semico
Slide 3: Contents
Contents z Strategy z Roadmap z Immersion / Slide 3
Slide 4: Leading customers continue to shrink aggressively
Leading customers continue to shrink aggressively Flash is leading 200 Logic trend DRAM trend Half pitch [nm] 100 Flash trend 80 60 40 02 03 04 05 06 07 08 09 10 11 Year / Slide 4
Slide 5: ASML's strategy in creating value
ASML’s strategy in creating value Market Share Technology leadership leadership Best in execution: Profitability for ASML and its customers Value of Ownership leadership / Slide 5
Slide 6: Market share through technology
Market share through technology 12” & ArF 60% • Reliable introduction KrF & Step & Scan 50% • Robust production ASML Market Share ($) • Cost effective 40% 8” & i-line 30% 6” & early i-line 20% 10% 0% 1984 1986 1988 1990 1992 1994 1996 1998 2000 2002 2004 Source: ASML / Slide 6
Slide 7: TWINSCAN installed base and ramp up per end H1 05
TWINSCAN™ installed base and ramp up per end H1 05 71 >200 5 24 20 3 2 2 2 z Over 300 i-line, KrF and ArF systems shipped since Q3-00 z 27 XT:1400 systems shipped worldwide z Seven immersion tools installed worldwide z Mix of 1150i, 1250i and 1400i z Process & equipment learning ongoing for >18 mont
Slide 8: Contents
Contents z Strategy z Roadmap z Immersion / Slide 8
Slide 9: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion Required k1 as function of resolution, wavelength and NA Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 0.31 0.22 1.20 0.40 0.28 1.35 0.31 0.22 1.50 0.25 13.5 0.25 0.59 0.41 k1 = (half pitch) * NA / wavele
Slide 10: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion Highest air-based NA system will support 60-65 nm Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 Highest air based NA 0.31 0.22 supports 60-65 nm 1.20 0.40 0.28 1.35 0.31 0.22 1.50 0.25 13.5 0.25 0.59 0.41
Slide 11: Record ramp up of new technology at our customers
Record ramp up of new technology at our customers 3000 2500 Wafers per Day 2000 1500 1000 500 0 Jan Feb Mar April May June XT:1250D (average) XT:1250D (best) XT:1400E (average) XT:1400E (best) / Slide 11
Slide 12: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion First super high NA immersion system enables 45 nm Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 0.31 0.22 First super high NA immersion 1.20 0.40 0.28 system enables 45 nm 1.35 0.31 0.22 1.50 0.25 13.5 0
Slide 13: Further extension with high-n liquids?
Further extension with high-n liquids? Assume: NAmax = 0.9*ncrit , k1 = 0.27 R = k1 *193 / NAmax= 58/ ncrit nglass nglass nfluid nfluid nresist nresist ncrit = MIN [nglass, nfluid, nresist] ncrit < MIN [nfluid, nresist] fluid & glass limit fluid limit fluid / glass 1.44 / 1.50 R = 40 nm water R = 40
Slide 14: High index fluids?
High index fluids? 1 0.9 Absorption coefficient [1/cm] 0.8 0.7 0.6 0.5 0.4 0.3 0.2 requirement 0.1 Water 0 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.80 Champion: Refractive index n=1.64, A = 0.047/cm / Slide 14
Slide 15: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion Water-based 193 nm not sufficient for 32-nm half pitch Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 0.31 0.22 1.20 0.40 0.28 Max NA water-based 193 nm immersion 1.35 0.31 0.22 requires double patterning
Slide 16: Double patterning
Double patterning: 47 nm L&S Int. 94nm Pitch Exposure 1 k1=0.205 Resist & development Nitride HM Si Transfer to hardmask Int. Exposure 2 & development Exp. 2 Exp. 1 Transfer to hardmask / Slide 16
Slide 17: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion 32 nm half pitch with 193 nm immersion extremely challenging Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 0.31 0.22 1.20 0.40 0.28 1.35 0.31 0.22 New liquid breakthrough is required 1.50 to enable 32 nm
Slide 18: EUV tool integration progress: available 2006
EUV tool integration progress: available 2006 32 nm L&S, > 10 W/hr, 0.25 NA, λ=13.5 nm e rvic or se rrid co reticle stage source- reticle handler collector module baseframe servo, vacuum, water, electronics cabinets wafer stage wafer handler / Slide 18
Slide 19: Roadmap scenarios, the impact of immersion
Roadmap scenarios, the impact of immersion EUV the only high volume opportunity Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 0.93 0.31 0.22 1.20 0.40 0.28 1.35 0.31 0.22 1.50 0.25 EUV required for 32 nm as cost reduction 13.5 0.25 for double patternin
Slide 20: ASML mask & system enhancements for low k1
ASML mask & system enhancements for low k1 Mask enhancement Low stray light techniques & optics & optimization software contamination control Dual stage wafer height Flexible off-axis & mapping & additional polarized illumination parallel metrology Illumination source Ultra-low aberration optimizati
Slide 21: Likely technology roadmap
Likely technology roadmap Half pitch (nm) 110 90 65 45 32 22 Year 2001 2003 2005 2007 2009 2011 λ (nm) NA 193 0.85 0.40 Pitch relaxation or 0.93 0.31 0.22 double patterning 1.20 0.40 0.28 1.35 Fluid/ Low k1 0.31 0.22 material 1.50 challenge 0.25 challenge 13.5 0.25 0.59 0.41 Infrastructure challenge
Slide 22: ASML 300mm product roadmap
ASML 300mm product roadmap 32 nm 13.5nm EUV EUV Decision on pilot production EUV 45 nm Alpha Demo WET 32 nm Decision on index >1.5 NA or immersion fluids/double 2x pattern patterning on 193 NA 40 nm NA>1.3X 45 nm 1700i NA=1.2 193nm ArF 65 nm 1400i NA=0.93 70 nm 1250i NA=0.85 DRY 65 nm 1400 NA=0.93 8
Slide 23: Roadmap strategy
Roadmap strategy z Continue to improve the value proposition of main stream products at all wavelengths z Realize dry to wet transition using water based immersion lithography through multiple customers and systems z Qualify post 193 nm lithography using world class research centers like Albany and
Slide 24: Contents
Contents z Strategy z Roadmap z Immersion z Dry to wet transition status z Production immersion tools / Slide 24
Slide 25: Leading the world in the transition from dry to wet
Leading the world in the transition from dry to wet 1st image on AT:1150i 16 customers test AT:1150i 1st generation AT:1150i shipped to Albany 2nd generation 1st XT:1250i 1st immersion chips 3rd generation 1st XT:1400i 6 4 4 5 5 5 3 4 4 05 00 00 00 00 00 00 00 00 00 2 2 2 2 2 2 2 2 2 20 Q1 Q1 Q4 Q2
Slide 26: Dual Stage TWINSCAN platform
Dual Stage TWINSCAN™ platform Immersion shower head Dry alignment Immersion exposure Dry wafer mapping (focus & levelling) / Slide 26
Slide 27: Dual stage TWINSCAN platform
Dual stage TWINSCAN™ platform Measure dry/expose wet in parallel at 122 wph Expose Position Metrology Position Align Focus Unload Lens Load Wet/dry change Metrology Position Unload Load Dry Metrology Expose Position O Time Line forExpose 1 Wafer Cycle O Swap Dry focus: additional wet 1 Wafer Cycle w
Slide 28: Immersion shower head design principles
Immersion shower head design principles Productivity Maximize scan speed Containment Of Minimize Prevent Water evaporation drying stains Overlay Defects / Slide 28
Slide 29: Immersion shower head design
Immersion shower head design Lens lens Lens z Free meniscus naturally confines water for hydrophobic* materials, at slow scan speeds *water easily rolls off / Slide 29
Slide 30: Immersion shower head design
Immersion shower head design S S Lens lens Lens z Free meniscus only partly confines water for hydrophilic* materials, even at very slow scan speeds z For higher scan speed, the immersion shower head is lowered and servo control is introduced *water likes to stick to it / Slide 30
Slide 31: Immersion shower head design
Immersion shower head design S S Lens lens Lens z To contain water at full scan speed an air curtain is introduced: no water droplets left on the wafer Immersion shower head works with all materials / Slide 31
Slide 32: Dramatic improvements in immersion defect levels
Dramatic improvements in immersion defect levels defect count wet equals dry by end 2005 100 10 defects/cm2 processed wafers bare wafers 1 Champion 0.1 data on I2 dry baseline 0.01 04 04 04 04 05 05 05 05 20 20 20 20 20 20 20 20 1 2 3 4 1 2 3 4 Q Q Q Q Q Q Q Q / Slide 32
Slide 33: Excellent wet (XT:1400i) to dry (XT:1250) overlay
Excellent wet (XT:1400i) to dry (XT:1250) overlay 20 x 18 y 16 14 Overlay [nm] 12 10 8 6 4 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Wafer number / Slide 33
Slide 34: Dry to wet transition status
Dry to wet transition status z Multiple customers (6) have or are about to receive (4) their R&D immersion transition tools. Others will participate (11) at collaborative research centers (2) qualifying the immersion process integration. z Co-solution partners like wafer track and resist vendors wor
Slide 35: Contents
Contents z Strategy z Roadmap z Immersion z Dry to wet transition status z Production immersion tools / Slide 35
Slide 36: Leading the world in the transition from dry to wet
Leading the world in the transition from dry to wet 1st image on AT:1150i 16 customers test AT:1150i 1st generation AT:1150i shipped to Albany 2nd generation 1st XT:1250i 1st immersion chips 3rd generation 1st XT:1400i 4th generation XT:1700i 6 4 4 5 5 5 3 4 4 05 00 00 00 00 00 00 00 00 00 2 2 2 2 2
Slide 37: Introducing TWINSCAN XT:1700i: new features
Introducing TWINSCAN™ XT:1700i: new features Illuminator with 45nm volume production increased σ range and polarization 122 wph dual stage immersion TP Catadioptric lens design with 1.2 NA at 26 x 33mm field 4th generation immersion tool / Slide 37
Slide 38: XT:1700i for 45nm volume production
XT:1700i for 45nm volume production Depth of Focus [µm] 0.8 0.7 0.6 Polarized Dipole 0.5 Illumination 1.2 NA 0.93 NA 0.4 1.0 NA 0.3 0.2 1.07 NA 0.1 1:1 Dense Lines using 6% att-PSM 0.0 40 45 50 55 60 65 70 Resolution half-pitch [nm] Full resist model 6% att-PSM Mask with Polarized Dipole illuminatio
Slide 39: Hyper NA lens: polarization to maximize contrast
Hyper NA lens: polarization to maximize contrast 1.2 Polarized 1 0.8 Unpolarized Contrast 0.6 0.4 0.2 0 35 45 55 65 75 85 95 Constructive interference Half pitch [nm] 100% contrast Polarization z improves image contrast and exposure latitude z enhances resolution with 5 nm / Slide 39
Slide 40: 55nm combined polarization and immersion boost DoF above 1 micron
55nm combined polarization and immersion boost DoF above 1 micron! Dry: DoF 480nm NA = 0.93, Dipole-35deg σ=0.97/0.81 X-polarization k1=0.265 F = -240 nm F = 0 nm F = 240 nm Wet: DoF 1100nm F = -525 nm F = -225 nm F = 0 nm F = 225 nm F = 525 nm / Slide 40
Slide 41: Overview of alternative lens design types for >1 NA
Overview of alternative lens design types for >1 NA Catadioptric Dioptric Folded designs: Multi mirror: In-line Stability, Off axis coating angle field, scan challenges length challenges Source: Carl Zeiss SMT patent applications / Slide 41
Slide 42: Hyper NA lens: in-line catadioptric design type
Hyper NA lens: in-line catadioptric design type z 40% less material and 15% more NA compared to refractive designs z Rectangular scan field supporting focus drilling and maximum productivity Design type z Same image orientation as refractive Example lenses: reticle compatibility only! z Small incide
Slide 43: TWINSCAN 300mm throughput roadmap
TWINSCAN™ 300mm throughput roadmap 140 Dry 120 Immersion Throughput (WPH) 100 80 60 40 20 0 2003 2004 2005 2006 / Slide 43
Slide 44: Key benefits of ASML immersion technology
Key benefits of ASML immersion technology z True dual stage enabling dry wafer metrology in parallel with wet wafer exposure enabling 122 Wafers/h. z New “in line” catadioptric lens enabling a 30% resolution advantage down to 45 nm production using a 26x33 mm image field, maintaining mask compatibil
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Slide 46: Commitment
Commitment <file name> <version 00> <author>