Slide 1: 40 nm and below: Extending water-based immersion towards the limit
40 nm and below Extending water-based immersion towards the limit Martin van den Brink Executive Vice President Marketing and Technology
Slide 2: Contents
Contents Inspiration: Market drivers Immersion: Ramping to volume production Innovation: Pushing ArF Lithography to 40 nm and below
Slide 3: Customers' appetite for shrink continues unabated
Customers’ appetite for shrink continues unabated Logic DRAM NAND
Slide 4: Shrink drives cost per function and market growth
NAND size, GB NAND Revenue, M$ Projected cross- over HDD - NAND, GB Shrink drives cost per function and market growth Source: Gartner Dataquest, iSuppli, ASML 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 NAND cost, $ / GB 0.01 0.10 1.00 10.0 1,000 10,000 5,000 10,000 15,000 20,000 25,000 3
Slide 5: Resolution, CD uniformity & overlay drive shrink
Node Aggressive Typical Relaxed 130 nm 90 nm 65 nm 45 nm 32 nm Resolution, CD uniformity & overlay drive shrink Layout 6 transistor SRAM Cell CD CD CDU & Overlay X-section through Cell Source: IMEC, TI 2.00 2.50 3.00 1.00 1.25 1.50 0.45 0.55 0.80 0.20 0.27 0.34 0.10 0.13 0.19
Slide 6: CD control and overlay are critical for device yield
Source: IMEC CD control and overlay are critical for device yield
Slide 7: Shrink drives overlay requirements
Shrink drives overlay requirements 2004 2005 2006 2007 2008 2009 2010 2011 2012 NAND DRAM Logic
Slide 8: Lithography drives increased die per wafer
868 1234 1803 2344 28 mm 2 37 mm 2 54 mm 2 76 mm 2 Resolution (CD) Lithography drives increased die per wafer Typical Aggressive Relaxed Die Size Die / Wafer 45 nm 32 nm Design Rule: 45 nm 32 nm 256 MB SRAM example
Slide 9: Increased die per wafer drives lower cost die
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 Increased die per wafer drives lower cost die * Assuming 20% wafer processing cost increase per node, 65nm = € 1200 / wafer, die yield = 85% Design Rule [nm] Relaxed Typical Aggressive 256 MB SRAM 32-nm node
Slide 10: ASML products are key enablers for shrink
ASML products are key enablers for shrink Logic DRAM NAND ASML Product Introduction XT:1400 XT:1700i AT:1200 AT:850
Slide 11: Lithography: drives Performance, Cost, Size, Yield
Lithography Performance Size (=Cost) Yield Cost Size (=cost) Yield Lithography Productivity Overlay Resolution CD Control Lithography: drives Performance, Cost, Size, Yield A key enabler for the semiconductor industry
Slide 12: Contents
Contents Inspiration: Market drivers Immersion: Ramping to volume production Innovation: Pushing ArF Lithography to 40 nm and below
Slide 13: ASML achievements in immersion leadership
90 nm 42 nm ASML achievements in immersion leadership 2003 1 st scanning immersion imaging XT:1250i 0.85 NA, 70 nm 2004 AT:1150i 0.75 NA, 90 nm 1 st ICs fabricated 2005 XT:1400i 0.93 NA, 65 nm Immersion Volume Production 2006 XT:1700i 1.2NA, 45 nm Immersion processing at single defect level
Slide 14: Shipping 500th TWINSCAN system
8 US Europe Asia 125 2 10 35 340 THIS QUARTER 2006: SHIPPING 500 th TWINSCAN SYSTEM TWINSCAN, with dual wafer stages, is the economically and technically proven lithography solution Total & Immersion
Slide 15: TWINSCAN dual stages are ideal for immersion
Immersion exposure Immersion shower head Dry alignment Dry wafer mapping (focus & levelling) TWINSCAN dual stages are ideal for immersion
Slide 16: Integrated metrology and calibration capability
Dual wafer stage concept is key enabler for automatic integrated MEASUREMENT - CALIBRATION - OPTIMIZATION TWINSCAN dual wafer stages offer the most extensive integrated metrology and calibration capability Wafer height map Calibration of process - focus Alignment mark positions Pupil intensity and p
Slide 17: Dual wafer stages enable parallel wafer processing
SWAP UNLOAD LOAD DRY METROLOGY LOAD DRY METROLOGY EXPOSE UNLOAD EXPOSE Dual wafer stages Dual wafer stages enable parallel wafer processing for unparalleled throughput Metrology position Expose position O O Lens utilization Single wafer stage Timeline for 1 wafer cycle O O Dry focus: additional wet
Slide 18: The immersion challenge triangle
Overlay Productivity Defects Containment of water Minimize evaporation Prevent drying stains Maximize scan speed The immersion challenge triangle
Slide 19: Air curtain allows high speed scanning
hydrophilic Air curtain allows for high speed scanning for increased productivity 25% 50% 75% 100% 20 ° 120 ° Air Curtain Productivity Advantage Air Curtain OFF 40 ° 60 ° 80 ° 100 ° Receding contact angle Air Curtain ON Resists & developer soluble top coats hydrophobic solvent soluble
Slide 20: XT:1400i at 500-mm/s: only 3 immersion defects
0.006 def/cm 2 ( 3 defects ) XT:1400i @ 500-mm/s speed: Only 3 immersion defects 100-nm L/S In cooperation with TEL Scanner: ASML XT:1400i @ 500mm/sec Track TEL Lithius i+ Process: BARC AZ-Clariant 1CD5 Resist TOK TArF6011 TC TOK TILC031 Inspection: KLA-Tencor 2365
Slide 21: Defect levels comparable to dry systems demonstrated
TSMC Single Digit Defect Zone 0.001 0.01 0.1 Nov-04 Feb-05 May-05 Sep-05 Dec-05 Mar-06 1000 10000 Defect levels comparable to ‘dry’ systems demonstrated
Slide 22: Immersion dual-stage overlay
Immersion dual-stage overlay of 7 nm Day 1 Day 2 Day 3 X Y XT:1700i
Slide 23: Lens design and manufacturing innovation for max NA
Water Immersion Dry (air) 1100 1200 1400 1700i Lens design and manufacturing innovation for max NA 0.75 2001 0.85 2003 0.93 2005 1.2 2006 NA Year Catadioptric design Geometric scaling Dioptric designs Lens Design
Slide 24: Benefits of in-line catadioptric lens design
Benefits of in-line catadioptric lens design Source: Carl Zeiss SMT patent applications Catadioptric Folded Designs In-line Dioptric Single barrel design provides mechanical stability & ease of adjustment Low angles of incidence on mirrors for polarization control and transmission Fewer optical elem
Slide 25: Benefits of in-line catadioptric lens design
No mask Image flip! Reticle compatibility Benefits of in-line catadioptric lens design - In- Line catadioptric even # mirrors Refractive Lenses F F Reticle compatibility - even # mirrors Refractive Lenses Reticle compatibility Folded catadiotric F Reticle uneven # mirrors Reticle incompatibility
Slide 26: In-line catadioptric lens is manufacturing and performance proven
1700i 1400 In-line catadioptric lens is manufacturing and performance proven 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Mean Lens Production
Slide 27: Excellent polarization performance at multiple systems
Excellent polarization performance at multiple systems 0.5 1.5 2.5 Polarization Purity Multiple Systems Polarization Purity variation across field
Slide 28: Polarized imaging down to 45 nm
Polarized imaging down to 42 nm 550-mm/s scan speed
Slide 29: Data proven excellent CD control across wafer
Data proven excellent CD control across wafer 550-mm/s scan speed Using reticle error and process correction Full Wafer CDU 1.4 nm 45-nm Dense Lines Intra Field CDU 0.9 nm 45-nm Dense Lines
Slide 30: Imaging of challenging contact layers
Imaging of challenging contact layers
Slide 31: Contents
Contents Inspiration: Market drivers Immersion: Ramping to volume production Innovation: Pushing ArF Lithography to 40 nm and below
Slide 32: TWINSCAN XT:1900i provides best resolution, productivity and overlay
“40nm and below” Highest NA ArFi lens: 1.35 NA Improved Overlay 6 nm Highest Productivity Fastest Scanning Stages: 131 wph @ 125 exposures / wafer TWINSCAN XT:1900i provides the best resolution, productivity and overlay
Slide 33: Milestones in immersion leadership
Milestones in immersion leadership
Slide 34: Lens design and manufacturing innovation for max NA
Water Immersion 1100 1200 1400 1700i 1900i Lens design and manufacturing innovation for max NA 0.75 2001 0.85 2003 0.93 2005 1.2 2006 NA Year Dry (air) 2007 1.35
Slide 35: Mask and system enhancements extend lithography to the limit of k1
ASML mask and system enhancements extend lithography to the limit of k Offline Dual stage wafer height mapping Focus Dry, Expose Wet Mask enhancement techniques & optimization software DoseMapper for optimum CD Uniformity Application specific lens setup Flexible off-axis & polarized illumination In-
Slide 36: XT:1900i is designed for 40-nm volume production
XT:1900i 1.35 NA XT:1400i 0.93 NA XT:1700i 1.2 NA XT:1400i : 1100 nm DoF @ 55 nm XT:1700i : 950 nm DoF @ 42 nm Polarized dipole Illumination 1:1 Dense Lines using 6% att-PSM Image in film calc. +/-3% dose error +/-10% CD spec XT:1900i is designed for 40-nm volume production 0.0 0.1 0.2 0.3 0.4 0.5 0
Slide 37: ASML products enable shrink
ASML products enable shrink Logic DRAM NAND ASML Product Introduction XT:1400 XT:1700i AT:1200 AT:850 XT:1900i
Slide 38: Cost per function continues downward trend
Cost per function continues downward trend ASML aligns to customer value drivers by delivering lower cost per function KrF 1150 ArF 1250 ArF 1400 ArF 1700 ArFi 1900 ArFi 0.00 0.20 0.40 0.60 0.80 1.00 1.20 2000 2002 2004 2006 2008 2010 0.00 0.20 0.40 0.60 0.80 1.00 1.20 2000 2002 2004 2006 2008 2010
Slide 39: TWINSCAN XT:1900i: 40 nm and below
TWINSCAN XT:1900i: 40 nm and below Volume production at 40 nm and below Fifth generation immersion tool on TWINSCAN dual wafer stage platform with improved overlay 6 nm and 131 W/hr productivity Proven catadioptric lens concept with manufacturing and volume ramp up capability Enabling our customer t
Slide 40: Extending water-based immersion towards the limit
Extending water-based immersion towards the limit ASML offers full suite of TWINSCAN immersion products with resolutions from 65- to 40-nm and below 20 immersion systems shipped to customer sites on three continents TWINSCAN XT:1900i most advanced immersion system of the industry and ready for shipm
Slide 41: Commitment
Commitment