Slide 1: ASX Release: Replacement USA Marketing Presentation
4DS Memory Limited | ABN 43 145 590 110 Level 2, 50 Kings Park Road, West Perth WA 6005 PO Box 271, West Perth WA 6872 +61 8 6377 8043 | david@4dsmemory.com | www.4dsmemory.com ASX RELEASE 28 August 2018 Replacement USA Marketing Presentation – August 2018 4DS Memory Limited (ASX:4DS) (4DS) (the Com
Slide 2: A Disruptive Technology for Storage Class Memory
A DISRUPTIVE TECHNOLOGY FOR STORAGE CLASS MEMORY August 2018 - USA Marketing Roadshow 1
Slide 3: Disclaimer
DISCLAIMER IMPORTANT NOTICE: This presentation has been prepared by 4DS Memory Limited. (“4DS” or the “Company”) based on Forward looking statements information available to it as at the date of this presentation. The information in this presentation is provided in summary form and does not contain
Slide 4: Memory / Storage Opportunity Space
MEMORY / STORAGE OPPORTUNITY SPACE Super low power or super fast Limited or massive amounts of data Retrieve data locally or from the cloud Retain results locally or stream into the cloud Must not fail in high temperature environment or when moving (automotive) Price-sensitive applications (consumer
Slide 5: 3 Distinct Memory / Storage Classes
3 DISTINCT MEMORY / STORAGE CLASSES Requirements Internet-of-things Embedded on SOC High density / High volume Cost Low chip cost Lower than SRAM Low bit cost Bit capacity Low Higher than SRAM High and higher Power Low chip power Lower than SRAM Speed Low Fast Best = DRAM Retention Medium High Best
Slide 6: 4DS Focused on High Density / High Volume
4DS FOCUSED ON HIGH DENSITY / HIGH VOLUME Requirements Internet-of-things Embedded on SOC High density / High volume Cost Low chip cost Lower than SRAM Low bit cost Bit capacity Low Higher than SRAM High and higher Power Low chip power Lower than SRAM Speed Low Fast Best = DRAM Retention Medium High
Slide 7: Current High Density / High Volume Leaders
CURRENT HIGH DENSITY / HIGH VOLUME LEADERS Yearly volume 2017 revenue* Use Leader (in gigabytes) $ per gigabyte (by chip makers) System Memory DRAM 11.5 billion US$ 72.1 billion US$ 6.27 Silicon Storage NAND Flash 175.7 billion US$ 53.7 billion US$ 0.30 *2017 Source Gartner © 4DS Memory •. Confident
Slide 8: High Density / High Volume Memory / Storage
HIGH DENSITY / HIGH VOLUME MEMORY / STORAGE DRAM System Memory NAND Flash Silicon Storage Cost Highest 100 times more than HDD High 10 times more than HDD Cycling Endurance Highest 1012 times higher than SSD Lowest 103 Data Retention Lowest 0.1 sec Medium 109 times longer than DRAM Random Access Rea
Slide 9: "Universal Memory" May Never Exist
“UNIVERSAL MEMORY” MAY NEVER EXIST DRAM System Memory NAND Flash Silicon Storage Cost Highest 100 times more than HDD High 10 times more than HDD Cycling Endurance Highest 1012 times higher than SSD Lowest 103 Data Retention Lowest 0.1 sec Medium 109 times longer than DRAM Random Access Read Speed F
Slide 10: Vast Space Between DRAM Memory & NAND Flash Storage
VAST SPACE BETWEEN DRAM MEMORY & NAND FLASH STORAGE Endurance DRAM 1012 9 orders of magnitude NAND Flash 103 Retention <100ns 9 orders of magnitude 10 years 9
Slide 11: Storage Class Memory (SCM)
STORAGE CLASS MEMORY (SCM) Endurance DRAM 1012 9 orders of magnitude Storage Class Memory NAND Flash 103 Retention <100ns 9 orders of magnitude 10 years 10
Slide 12: 4DS Aiming for Space Close to DRAM
4DS AIMING FOR SPACE CLOSE TO DRAM – BIGGEST OPPORTUNITY Direct Access Read Speed DRAM ≈ 50ns Storage Class Memory NAND Flash 1 to 10µs Retention <100ns 9 orders of magnitude 10 years 11
Slide 13: Storage Class Memory Requirements
STORAGE CLASS MEMORY REQUIREMENTS Requirements • Based on well understood physics (like DRAM and NAND Flash) • Scalable technology over many generations (like DRAM and NAND Flash) • Tunable technology in the vast space between DRAM and NAND Flash • Capable of speed as close as possible to DRAM • Cap
Slide 14: Storage Class Memory Requirements: 4DS
STORAGE CLASS MEMORY REQUIREMENTS 4DS Requirements ✓ • Based on well understood physics (like DRAM and NAND Flash) ✓ • Scalable technology over many generations (like DRAM and NAND Flash) ✓ • Tunable technology in the vast space between DRAM and NAND Flash ✓ • Capable of speed as close as possible t
Slide 15: High Density / High Volume Sweet Spots
HIGH DENSITY / HIGH VOLUME SWEET SPOTS Memories Systems Memory Silicon Storage Storage Class Memory (close to DRAM read speed) DRAM NAND Flash MRAM Filamentary ReRAM Phase Change ReRAM Interface Switching ReRAM 4DS 14
Slide 16: Storage Class Memory: A Disruptive Technology
STORAGE CLASS MEMORY: A DISRUPTIVE TECHNOLOGY Opportunity to offer: Faster systems Consuming less power Capable of processing more data In a more cost-effective way Critical for the fastest growing segments: Cloud and Mobile 15
Slide 17: About 4DS
ABOUT 4DS Founded in 2008 Publicly traded on Australian Stock Exchange (ASX Code : 4DS) 964 million shares on issue / 122 million unlisted options / Market Cap fully diluted at A$0.11.5 = US$90 mil* All technology developed in-house All R&D in Silicon Valley 20 US patents granted + several pending J
Slide 18: Collaboration Agreement
COLLABORATION AGREEMENT Jointly develop a transferrable production ready process For state-of-the-art high volume / high density production tools Apply this process on imec’s proven megabit memory platform To fabricate a megabit 4DS Interface Switching chip On same wafer size used for high volume pr
Slide 19: Why imec?
WHY IMEC? #1 independent semiconductor research & development institute Collaborates with the who’s who of electronic products & systems Collaborates with the who’s who of high volume / high density memories Has excellent track record in transfer of semiconductor process from “lab” to ”fab” Uses sam
Slide 20: 4DS Interface Switching ReRAM
4DS INTERFACE SWITCHING RERAM 19
Slide 21: Current Status
CURRENT STATUS Scales to geometries needed for high-density and 3D: 40nm Endurance yield > 97% Read speed comparable to DRAM: an area-based ReRAM first No need for speed-crippling error correction: a ReRAM first Endurance between DRAM and NAND Flash Retention between DRAM and NAND Flash imec wafers
Slide 22: Board and Management
BOARD AND MANAGEMENT Global expertise founding and building high-tech companies. JIM Dr GUIDO HOWARD DORRIAN ARNOUT DIGBY Non-Executive Chairman CEO & Managing Director Non-Executive Director Served as CEO of several 30+ years in commercialising Former senior roles at IBM, Adobe, Silicon Valley comp
Slide 23: Thank You
THANK YOU SILICON VALLEY 3155 Skyway Court Fremont CA 94539 UNITED STATES AUSTRALIA ABN 43 145 590 110 Level 2, 50 Kings Park Road West Perth WA 6005 ASX Code: 4DS AUSTRALIA www.4dsmemory.com david@4dsmemory.com 22