Micron Technology, Inc. · NASDAQ:MU

Micron Technology — Reg A Offering (January 2019)

9 slides from Micron Technology's offering presentation, January 2019

  1. Slide 1: Introducing 2nd Generation Micron Mobile TLC 3D NAND

    nd Introducing 2 Generation Micron® Mobile TLC 3D NAND Industry-leading storage solutions for flagship smartphones ©2018 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis wit

  2. Slide 2: Top Mobile trends that impact memory

    Top 1. On-device AI and machine Mobile learning Dedicated AI engines and apps trends 2. Advanced user authentication Face ID, fingerprint sensors that 3. Augmented reality More display pixels, new lens systems impact 4. Dual cameras on every phone Higher quality imaging, new effects memory

  3. Slide 3: 2nd Generation Micron Mobile TLC 3D NAND

    2nd Generation Micron® Mobile TLC 3D NAND High Performance Enhanced Reliability Up to 150% faster sequential Unique floating gate writes vs. previous TLC 3D architecture provides superior NAND*; UFS 2.1 interface data retention compared to delivers 200% higher charge trap gates bandwidth vs. e.MMC 5

  4. Slide 4: CMOS under Array (CuA)

    CMOS under Array (CuA) Higher storage capacity in a smaller space Metal  Enables ~25% more die per wafer relative to competing 64-layer 3D NAND 64 Active  Industry’s most dense mobile 3D Layers NAND memory array*  Highly efficient utilization of memory cell space * Source: Micron. Internal measur

  5. Slide 5: World's Smallest TLC 3D NAND Die

     Micron 32GB TLC 3D NAND die Micron: measures 59.341mm2, making it 1y/1z planar World’s the smallest TLC 3D NAND on the market* Micron TLC 3D NAND Smallest − ~44% smaller vs. 1y/1z planar NAND**  Vertically tiered die packs up to 6X TLC 3D the capacity in a smaller space vs. planar NAND** NAND Die

  6. Slide 6: Universal Flash Storage (UFS) 2.1

    Universal Flash Storage (UFS) 2.1 UFS 2.1 Serial Interface Read AND Write Read  UFS 2.1 delivers significantly faster random UFS 2.1 Host device read speed performance than e.MMC 5.1 Write − UFS uses a full duplex serial interface, allowing reading and writing at the same time, unlike e.MMC’s half

  7. Slide 7: Mobile AI Drives Need for Faster Storage Performance

    Mobile AI Drives Need for Faster Storage Performance Artificial Intelligence is enabled by its ability to access data quickly CPU NPU (AI) DATA GPU DSP FAST Memory/Storage Smartphone SoC Subsystem

  8. Slide 8: Summary: 2nd Gen Micron Mobile TLC 3D NAND

    New 64-layer TLC 3D NAND delivers up to Summary: 6X more storage than planar NAND Industry’s smallest 64GB TLC 3D NAND 2nd Gen die, measuring 59.341mm2 Micron Built on proven cell technology enabling better performance, quality and reliability Mobile TLC Up to 150% performance improvement vs. 3D NAN

  9. Slide 9: Slide 9

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