Everspin Technologies, Inc. · NASDAQ:MRAM
Everspin Technologies — CES 2012
13 slides from Everspin Technologies's conference presentation, January 2012
Slide 1: Accelerating Data Storage
Accelerating Data Storage January 2012
Slide 2: Everspin – The MRAM Company
Everspin – The MRAM Company • MRAM - Magnetic Random Access Memory • Fastest non-volatile memory with unlimited endurance • Only company to have commercialized MRAM • Founded 2008, 100%+ annual revenue growth • Fundamental & essential MRAM IP • 600+ Patents & Applications WW, 175+ granted • Backed b
Slide 3: Everspin – The Executive Team
Everspin – The Executive Team Unique magnetic and memory experts management team and industry-leading MRAM research & development team Phill LoPresti President & CEO Jon Slaughter, Ph.D. VP Technology R &D Brad Engel, Ph.D. VP Product Dev. & Quality Sanjeev Aggarwal, Ph.D. VP Mfg. & Process Technolo
Slide 4: MRAM Adoption Accelerating
MRAM Adoption Accelerating 4.0M+ 300+ 250+ 100+ 100+ MRAM MRAM MRAM MRAM MRAM Shipments Customers Design Wins(1) Applications Products 10 Everspin Cumulative Toggle MRAM Shipments 9Mpcs 9 * projections 8 7 6 5 4Mpcs 4 3 2 1 0 3Q08 4Q08 1Q09 2Q09 3Q09 4Q09 1Q10 2Q10 3Q10 4Q10 1Q11 2Q11 3Q11 4Q11 1Q12
Slide 5: MRAM is Everywhere
MRAM is Everywhere Data Center & Storage Energy & Infrastructure Automotive & Transportation 5
Slide 6: Current MRAM Products
Current MRAM Products 16-bit I/O 48-BGA Part Number Density Configuration Temp x8 Asynchronous parallel I/O MR4A16B 16Mb 1M x 16 C,I,A x16 Asynchronous parallel I/O MR2A16A 4Mb 256K x 16 C,I,E,A MR0A16A 1Mb 64K x 16 C,I,E,A x8 Asynchronous parallel 1.8V I/O 44-TSOP2, 54-TSOP2 8-bit I/O x8 As
Slide 7: Broad deployment with exemplary quality
Broad deployment with exemplary quality Recognized Everspin for Perfect MRAM Quality 250k+ systems with no reported failures to-date Critical Storage for Industrial Computing Boards Robust & reliable non-volatile memory solution MRAM products for A350 Flight Control Computer Critical program and dat
Slide 8: Everspin Toggle MRAM Technology
Everspin Toggle MRAM Technology • Simple 1-transistor + 1-MTJ memory cell MTJ • MTJ inserted between metal layers • State of bit detected as change in resistance • Unlimited endurance • Leverage CMOS ecosystem Transistor MRAM Tunnel Junction Cross-sectional view Array
Slide 9: Best in Class Storage & Working Memory
Best in Class Storage & Working Memory Primary Persistent Storage Extreme Working Random System Environment Memory Access Memory Memory Memory Ultra-Low Ultra-High Robust Wide Read & Write Intrinsic Power Operating Latency Reliability Fail Safe Temperature <50ns >20yrs@125oC No Caps or -40oC – 125oC
Slide 10: Spin-Torque MRAM – Next generation MRAM
Spin-Torque MRAM – Next generation MRAM Current MRAM uses a magnetic field for switching Limits scaling due to constant magnetic field Next generation MRAM enables scaling to Gb densities Everspin on track to deliver industry’s first ST-MRAM Toggle Write Spin-Torque Write 10
Slide 11: Product Roadmap
Product Roadmap 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Spin Torque Rapidly Increasing MRAM From Mb to Gb Density Production Increasing Pre- Serial SPI Compatible density as Production defined 256Kb, 4Mb by market 1Mb requirements Sampling SRAM Compatible 256Kb, Design SOIC 1Mb (x8) Increa
Slide 12: Positioned for Extraordinary Growth
Positioned for Extraordinary Growth Everspin is the leader in MRAM technology • Proven track record - manufacturing MRAM since 2006 • Top tier 1 customers • Deployment in many applications with exemplary quality Continued MRAM leadership • Leadership ST-MRAM R&D with initial silicon demonstrated • O
Slide 13: ~ Vi t7
‘ ; ~ Vi t7 <4 = , ’ ~~ a . 7 EVERSPIN’ TECHNOLOGIES The MRAM Company