Intel Corporation · NASDAQ:INTC

Intel — Investor Day (November 2015)

25 slides from Intel's investor day presentation, Nov 20, 2015

  1. Slide 1: Investor Meeting 2015 Santa Clara

    investor meeting 2015 SANTA CLARA

  2. Slide 2: Advancing Moore's Law

    Advancing moore’s law Bill Holt Executive Vice President General Manager, Technology and Manufacturing Group

  3. Slide 3: Agenda

    Agenda Progress 14nm Update Cost per Transistor Trend Economics of Moore’s Law – What does it take to afford to continue? Competitiveness Forward looking options

  4. Slide 4: 14nm Product Yield Is In Healthy Range

    14 nm Product Yield Is In Healthy Range 14nm Broadwell Yield Trend Increasing Yield Investor Meeting 2014 22nm Is Intel’s Highest Yielding Process Ever 22 nm data are shifted to align date of lead product qual

  5. Slide 5: 14nm Yield Is Maturing

    14 nm Yield Is Maturing 1H’14 2H‘14 1H’15 2H’15 1H’16 22 nm data are shifted to align date of lead product qual Trending to match 22nm yields Source: Intel

  6. Slide 6: Cost per Transistor Trend

    Cost per Transistor Trend 0.1 X 0.01 0.1 + 0.01 $ / mm2 (normalized) mm2 / Transistor (normalized) $ / Transistor (normalized) Source: Intel estimate, based upon available information and subject to change

  7. Slide 7: Agenda

    Agenda Progress 14nm Update Cost per Transistor Trend Economics of Moore’s Law – What does it take to afford to continue? Competitiveness Forward looking options

  8. Slide 8: Moore's Law Enables Innovation and Cost Reductions

    Moore’s Law Enables Innovation and Cost Reductions 32nm 22nm 14nm 10nm 7nm 5nm Twice the Same circuitry circuitry in the Option to design half the space OR same space = for optimal (cost reduction) (architectural performance/cost innovation) Source: Intel

  9. Slide 9: Advancing Process Technology Lowers Costs

    AdvancING Process Technology Lowers Costs Ten Year Model of Manufacturing and Process R & D $302B 2011 Analysis Same ten process years for $104B Process R & D Develop processes new Manufacturing Costs Assumptions are theoretical and not forecasts. Source: Intel

  10. Slide 10: Advancing Process Technology Lowers Costs

    AdvancING Process Technology Lowers Costs Ten Year Model of Manufacturing and Process R & D 2015 Update $270B Same ten process years for $116B Process R & D Develop processes new Manufacturing Costs Assumptions are theoretical and not forecasts. Source: Intel

  11. Slide 11: Three Ways To Test the Model

    Three Ways To Test the Model: Lower unit demand Higher technology development cost Reduced cost per transistor improvement

  12. Slide 12: Three Ways To Test The Model: Unit Demand Changes

    Three Ways To Test THE Model: Unit Demand changes Assumptions are theoretical and not forecasts Source: Intel

  13. Slide 13: Three Ways To Test The Model: R&D Cost Increases

    Three Ways To Test THE Model: R&D cost Increases Higher R&D investment growth will NOT limit Moore’s Law Assumptions are theoretical and not forecasts. Source: Intel

  14. Slide 14: Three Ways To Test The Model: CPT Improvement Reduces

    Three Ways To Test THE Model: CPT improvement reduces 1.0 Per Cost CPT~0.86 Reduction Normalized Transistor CPT~0.69x 0.1 65nm 45nm 32nm 22nm 14nm 10nm Historical CPT 14nm/10nm Overscaling BE CPT Poorer CPT scaling could challenge economic benefits Assumptions are theoretical and not forecasts Sourc

  15. Slide 15: Agenda

    Agenda Progress 14nm Update Cost per Transistor Trend Economics of Moore’s Law – What does it take to afford to continue? Competitiveness Forward looking options

  16. Slide 16: Logic Area Scaling Trend

    Logic Area Scaling Trend (Publicly available scaling information)

  17. Slide 17: Estimated Full Chip Scaling

    ESTIMATED FULL CHIP SCALING Area scaling estimate includes more of the technology features Sources: TSMC keynote, ARM Tech Con 2012, Oct. 30, 2012, 2014 TSMC Technology Symposium, April 22, 2014, Samsung, Globalfoundries Prep 14nm Process, EE Times 4/17/2014, 2014. 2014 VLSI Technology Symposium abs

  18. Slide 18: Transistor Density From Actual Products

    TRANSISTOR DENSITY FROM ACTUAL PRODUCTS Source: Intel Internal analysis Other names and brands may be claimed as the property of others.

  19. Slide 19: Composition Matters

    Composition Matters Source: Intel Internal analysis Other names and brands may be claimed as the property of others.

  20. Slide 20: Transistor Density Normalized for Composition

    TRANSISTOR DENSITY NORMALIZED FOR COMPOSITION Source: Intel Internal analysis Other names and brands may be claimed as the property of others. Source: Intel internal analysis

  21. Slide 21: Full Chip Scaling Updated With Actual 14/16nm Products

    FULL CHIP SCALING UPDATED WITH ACTUAL 14/16NM PRODUCTS Intel 14nm provides significant density advantage Sources: TSMC keynote, ARM Tech Con 2012, Oct. 30, 2012, 2014 TSMC Technology Symposium, April 22, 2014, Samsung, Globalfoundries Prep 14nm Process, EE Times 4/17/2014, 2014. 2014 VLSI Technology

  22. Slide 22: Future Options Being Investigated

    Future Options Being Investigated High RF, mm-Wave Voltage HETEROGENEOUS INTEGRATION Sensors/Actuators SELECTIVE Quantum DEPOSITION FUNCTION INTEGRATION SYSTEM DIRECTED SELF-ASSEMBLY Flexible/Stretchable RRAM and STTM Nanowire Tunnel FET III-V III-V Spin-based SCALING Source: Intel

  23. Slide 23: Summary

    Summary 14nm yields, availability and product portfolio MATURING Cost per Transistor is difficult, but progress is PROMISING Economics of Moore’s Law for Intel are SOLID Our view of competition is UNCHANGED Innovation and change will be required looking forward but…. The research pipeline is challen

  24. Slide 24: Investor Meeting 2015 Santa Clara

    investor meeting 2015 SANTA CLARA

  25. Slide 25: Risk Factors

    Risk Factors The statements in this presentation and other commentary that refer to future plans and expectations are forward-looking statements that involve a number of risks and uncertainties. Words such as “anticipates,” “expects,” “intends,” “goals,” “plans,” “believes,” “seeks,” “estimates,” “c

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