Cobham plc

Cobham — Technical Presentation (2010)

29 slides from Cobham's technical presentation, 2010

  1. Slide 1: GMIC - Glass Microwave Integrated Circuit Technology

    GMIC - Glass Microwave Integrated Circuit Technology 2010 The most important thing we build is trust Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/

  2. Slide 2: What is GMIC?

    What is GMIC ? • GMIC is a Proprietary Cobham circuit fabrication technology developed since 1985 • It provides many of the advantages of a MMIC technology whilst maintaining the flexibility and performance advantages of Hybrid technology - A process based Microwave Substrate Technology - The flexib

  3. Slide 3: G.M.I.C. High Performance Microwave Substrate Technology

    G.M.I.C. High Performance Microwave Substrate Technology • G.M.I.C. offers: - Excellent Microwave Performance - Integrated Passive Elements - R, C and L. - Compatibility with a wide range of active devices - Compatible with Auto Assembly & Test. - Excellent Thermal Management. - Predictable performa

  4. Slide 4: G.M.I.C. Technology Comparison

    G.M.I.C. Technology Comparsion. Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsystems can be accepted for any errors and/or omissions. Descri

  5. Slide 5: G.M.I.C. - Applications

    G.M.I.C. - Applications 900MHz to 100GHz • Versatility and Reliability; • For use in the following; - VCO’s - Imaging Radar (Airport Body scanners) - Amplifiers - Mixers - Missile Frontend Assemblies - Control Devices - AESA, Active Antenna components - Passive Components - Sub Systems Cobham MAL Lt

  6. Slide 6: G.M.I.C. Silicon Glass Wafer Technology

    G.M.I.C. Silicon Glass Wafer Technology. Overall thickness typically between 200µm - 635µm Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsyst

  7. Slide 7: Why use GMIC?

    Why use GMIC ? VCO Component Count Comparison Alumina Glass Substrate 1 1 Active Components 2 2 Passive Componets 11 - Wire Bonds 28 6 Package 1 1 Lid 1 1 Total Components 44 11 Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of

  8. Slide 8: Substrate Characteristic Data

    Substrate Characteristic Data Dielectric Loss Expansion Thermal Material Constant Tangent Coefficient Conductivity (ppmoC) (W/cmoC) GMIC Glass 0.0020 3.20 0.011* 4.1 Alumina 0.0010 6.60 0.190 9.9 BeO (99.5) 0.0020 6.00 1.570 6.8 Quartz 0.0002 0.55 0.013 3.9 GaAs - 6.00 0.440 12.9 Glass thickness in

  9. Slide 9: Carrier Material Data

    Carrier Material Data Expansion Thermal Material Coefficient Conductivity (ppmoC) (W/cmoC) Silicon 3.2 1.0 Kovar 6.0 0.15 Tungsten 4.5 1.63 Molybdenum 4.9 1.34 Copper 17.0 3.90 Aluminium 25.0 2.40 Silicon thickness in a finished wafer - 100 to 435 µm Cobham MAL Ltd trading as Cobham Sensor Systems ©

  10. Slide 10: Design for GMIC

    Design for GMIC • Element Libraries based on Scaleable Lumped Element Models & EM Simulation • Standard microwave design software used; - Agilent Advanced Design System (ADS) 2010 - Momentum 2.5D EM Solver - CST Microwave Studio 3D EM Solver - ADS and Wavemaker Layout software - Co Create Cobham MAL

  11. Slide 11: Example GMIC layout

    Example GMIC layout X-Band Detector Circuit On chip PCM* on larger circuits * Process Control Monitor Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com

  12. Slide 12: Example Lange Coupler Detail

    Example Lange Coupler Detail Length = 3250 µm, Line width = 52.5 µm, Spacing = 10µm Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsystems can

  13. Slide 13: Example GMIC Layout Array

    Example GMIC Layout Array Distributed PCM’s* on smaller circuits * Process Control Monitor Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsyst

  14. Slide 14: GMIC Passive Components

    GMIC Passive Components • Spiral Inductors - Values up-to ~ 15nH - Air-Bridge Versions for Higher ‘Q’ • Capacitors - Two variants, 3.1e-4pF/µm2 or 2.1e-4pF/µm2 - Value < 0.5pF realised by series Capacitors • Resistors - Two variants, 3.5Ω/Sq or 100Ω/Sq - Value from 3Ω To 10KΩ Cobham MAL Ltd trading

  15. Slide 15: GMIC Passive Components

    GMIC Passive Components • Lines - 10µm Min. Width and Gap - Interconnects - Can be plated-up for higher current capability - Small Inductances - Stubs - Crossovers • Air-Bridges - Interconnect to Capacitors, Inductors, Lange Couplers - Tuning Stubs, Multi-Variants - Change one mask to choose product

  16. Slide 16: Example 3D EM Simulation File

    Example 3D Em Simulation File GMIC Passive Splitter at Ka-Band Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsystems can be accepted for any

  17. Slide 17: GMIC Design Flow

    GMIC Design Flow Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsystems can be accepted for any errors and/or omissions. Descriptions and spec

  18. Slide 18: Processing Steps

    Processing Steps Furnace Diffusion / Deposition • Growing Thermal Oxide, Nitride layers and diffusion of P / N type layers in silicon. Grinding & Polishing • Planarisation of GMIC substrates Deposition - Metals and Dielectrics • Deposition of metal and dielectric layers used in fabrication of interc

  19. Slide 19: Processing Steps

    Processing Steps Photolithography • Patterning of deposited layers to allow fabrication of interconnections and components. Chemical Etch / Pedestal Etch • Chemical etches of deposited layers to provide required features such as resistors, capacitors and pedestals. Plate Up / Air Bridges • To provid

  20. Slide 20: Yield

    Yield • The Yield Drivers are similar to a semiconductor process - Circuit size - Total Capacitance Area (footprint) - Circuit Complexity - Component Tolerances Required - to some extent design dependant • Yield at Assembled Level (Note: GMIC DC screened at Wafer level) - Spread of chosen semiconduc

  21. Slide 21: Example Process Capability GMIC Limiter Assembly

    Example Process Capability GMIC Limiter Assembly Cpk > 1.33 = Capable Process vs Specification Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensor

  22. Slide 22: Typical GMIC Circuit on RF Prober

    Typical GMIC Circuit on RF Prober Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.com/sensorsystems can be accepted for any errors and/or omissions. Desc

  23. Slide 23: A Typical GMIC Circuit X-Band Detector Circuit

    A Typical GMIC Circuit X-Band Detector Circuit Pick & Place fiducial targets Ground Pedestal Capacitor RF Probe Pads Lange Coupler Active device on pedestal Tuning pads Resistor Inductor Air bridges Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to en

  24. Slide 24: GMIC Circuit Elements

    GMIC Circuit Elements Device mounting pedestal, DC bias capacitors and airbridges Resistors, capacitor and spiral inductor Detail of airbridges in spiral inductor Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information

  25. Slide 25: GMIC Circuit Examples

    GMIC Circuit Examples X-Band Amplifier Stacked or Parallel Bias air-bridge option 77 Ghz Radar Front End Silicon removed, pedestals remain and back side processing Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the informatio

  26. Slide 26: GMIC Circuit Examples

    GMIC Circuit Examples Typical circuits sizes range From 2 x 2 mm to 12 x 12 mm S-Band Limiter / Low Noise Amplifier (LNA) Hermetic Packaged Drop-in limiter 6.5 mm x 2 mm (Over 85,000 parts shipped to date) Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is mad

  27. Slide 27: GMIC LNA on Typical Carrier Mounting

    GMIC LNA on Typical Carrier Mounting 2 x 5 thou Ribbon Bonds Thicker Plating Used on Probe / Bond pads Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accuracy of the information contained in this brochure, no responsibility www.cobham.co

  28. Slide 28: GMIC Shipping Methods

    GMIC Shipping Methods • Complete DC tested wafers • Diced wafer on tape • Waffle packs • Gel packs • In addition can be assembled into a test circuit up-to a higher level integration Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is made to ensure the accurac

  29. Slide 29: For further information please contact

    For further information please contact: Cobham Sensor Systems Featherstone Road Wolverton Mill Milton Keynes, MK12 5EW England Tel: +44 (0) 1908 574200 Fax: +44 (0) 1908 574300 E-mail - cobham.mal@cobham.com Cobham MAL Ltd trading as Cobham Sensor Systems © Cobham plc, 2010. Whilst every effort is m

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