Asml Holding Nv · EURONEXT:ASML
Asml Holding Nv — Investor Day (November 2014)
14 slides from Asml Holding Nv's investor day presentation, Nov 24, 2014
Slide 1: ASML Investor Day London 2014: DUV Smalltalk
EX-99.4 5 d826396dex994.htm EX-99.4 Exhibit 99.4 Matthew DUV Vice 24 INVESTOR ASML LONDON November President SMALLTALK2014 McLaren DAY 2014 Program Management, DUV
Slide 2: Forward-looking statements
Slide Public ASML Forward This segments, margin expected shipments, of new Law, “plan”, assumptions Forward-looking equipment confidence performance roadmaps, ability litigation, available underlying acquired are our made applications document and 2tools, to November percentage, “estimate”, looking
Slide 3: Increasing patterning complexity impacts wafer cost for future nodes
Slide Public ASML Number Logic EUV On 18DRAM 2014 The Increasing Patterning Productivity 7 product nm6challenge growing ArF-i 5= 2015 3100 4November 80 Logic of 3silicon 80 complexity number 260 2016 exposures ArF Overlay (good 1number 60 40 for 0KrF 2017 atoms 40 20 lithography: 2014 of wafers 20 (
Slide 4: TWINSCAN NXT immersion roadmap
Slide Public ASML TWINSCAN Long Application 190 On 28 2M NXT:1965Ci 20/16/14 10 2015 2H 1H product NXT:1960Bi WpH 74term NXT:1950i NXT:1980Di 1M November 2L 230 Immersion NXT:next overlay Node NXT:1970Ci 6.5 Immersion WpH nm 6.5 Logic 2014 71st <3.5 nm 250 2013 nm 2.5 opportunity Shipment 2009 DRAM
Slide 5: TWINSCAN technology advances required to enable future nodes
Slide 5Table Public ASML TWINSCAN Multiple Reticle Illumination Alignment Imaging Environmental Immersion Overlay Wafer Imaging/Focus Stage November stage -performance technology general and technology Accuracy Flatness uniformity accuracy Immersion conditioning Levelling 2014 advances (lens) (laser
Slide 6: Overlay advances in almost all sub modules
Slide Public ASML Overlay More Higher Smaller Improved Example Order mm nm -15010 150 -100 6colors of 8light November illumination & 6100 magnitude 1:optical 2: -50 4Imaging Alignment Wafer 2(broad source 50 05050 -2 0100 design -50 table 2014 -4 100 illumination intensity improvements improvement s
Slide 7: Higher productivity enabling Flexwave
Slideenabling Public ASML Imaging Example Higher Flexwave Insertion This 7 productivity November improvements 3: of Flexible a unique technology 2014 can Lens flexible also cause is Element available needed lens lenselement elements toon counter allthat NXT to the can increase immersion heating be h
Slide 8: Productivity improvement of TWINSCAN systems
Slide the Public ASML Productivity Speed, 300mm Maximum 6000 >100% 1,000,000 1,500,000 2,000,000 Q304 With 5000 8Q205 Availability, November improvement TWINSCAN 1 wafers/year Wafers Million 4000 Q106 (wafers 3000 Q406 per 2014 wafers Efficiency per in Productivity Day, 2000 WPD Q307 day) per weekly
Slide 9: TWINSCAN dry roadmap: upgradeable ArF and KrF
Slide Public ASML November TWINSCAN Providing Long Upgradeable ArF XT:1460K 178 XT:1060K 205 Q3 KrF XT:800K NA 2014 0.93 0.80 WPH XT:1450H XT:1000K XT:860K 20 9term nm +TOP4 220 XT:800L lowest Improved 205 KrF/ArF 2014 Q2 Q4 Throughput 1st WPH KrF/ArF 7WPH 2015 2014 7nm shipment option Cost nm240 Q1
Slide 10: Modular TWINSCAN platform and large install base
Slideof Public ASML November TWINSCAN Modular easy development cost Large re-use ArF Development Install: Immersion cascading 10 install of service 570 design installed 2014 systems base and platform: Carrier benefits of ArF approach manufacturing offers performance base Install: Dry 70% due reduces
Slide 11: NXT platform upgradability and extendibility
Slide Public ASML November To NXT Field Platform New Total 350 300 D1xL D0xH 250 200 150 100 050 2013 Capacity D4x D3x control DRAM D1xM D1xH D2x system 2014 and wafer 11 H upgradability upgrades L M extendibility from XT the 2014 2015 capacity Node buys platform total previous provide 2016 for Tran
Slide 12: TWINSCAN immersion roadmap with productivity and upgrade packages
Slide Public ASML November TWINSCAN Long Application Logic 28 2M 20/16 SNEP /14 10 SNEP: 7Extension Enhancement 1M2H 1H NXT:1960Bi 12 term PEP: 2L DRAM 1NXT:1980Di 2NXT:1950i System NXT:1965Ci NXT:1970Ci Package Field 2014 Productivity Node Immersion Package 190 Node Upgrade 6.5 On 7WpH <3.5 nm nm p
Slide 13: Extending productivity alongside EUV: DUV business opportunity
Slide Public ASML November ASML’s Technology Extending Dry Productivity Business Alongside Demand A large lithography 13and current for opportunity immersion EUV, 2014 growing opportunity KrF is the requires mainstream the systems main immersion install lithography driver both remains base business
Slide 14: Investor Day ASML London
INVESTOR DAY ASML LONDON ASMLSMALLTALK2014