Bluglass Ltd · ASX:BLG
Bluglass — Investor Presentation (July 2007)
43 slides from Bluglass's investor presentation, Jul 23, 2007
Slide 1: Industry & Investor Presentation Update
For personal use only Industry & Investor Presentation Update 23 July 2007 1
Slide 2: Presentation to Industry and Investors
Presentation to Industry and Investors For personal use only Synopsis Business Profile Key Staff / Facilities / Funds Status Technology Commercial Tool Development Value Proposition Business Model Intellectual Property 2
Slide 3: Synopsis – Gallium Nitride and Solid State Lighting
Synopsis – Gallium Nitride and Solid State Lighting For personal use only The BluGlass business is based on the commercialisation of a novel technology for manufacturing low cost gallium nitride wafers Gallium nitride (GaN) is a semiconductor material that electroluminesces (emits light) under appli
Slide 4: Business Profile
Business Profile For personal use only Commercial spin off from Macquarie University, based on 10 years of fundamental physics research. A$10M oversubscribed IPO in September 2006. One of the most successful ASX small cap listings in 2006. Strong international technical and commercial team. Near ter
Slide 5: Key Staff
Key Staff For personal use only CEO - David Jordan David has 25 years experience in business and academic environments, primarily in the silicon and photovoltaic industries. CTO – Dr Scott Butcher Scott is the originator of the IP and a founder of the business. He has held senior research and commer
Slide 6: New Facilities
New Facilities For personal use only Based in Western Sydney in the suburb of Silverwater Commercial offices, research laboratory, workshop and semiconductor fabrication cleanroom Total facility 1,260 m2 Clean room 356 m2 Al / Ga / In deposition / photolithography / contact metalisation / reactive i
Slide 7: Funds Status
Funds Status For personal use only Year 1 Prospectus vs Latest Estimate (A$'000) (Estima te include s a ctua l spe nd to 30/06/07) 12,000 10,000 8,000 6,000 4,000 2,000 - Pilot Plant R&D IP IPO Salaries O/Heads Total Prospectus Actual Commercial in Confidence 7
Slide 8: Technology
For personal use only 8 Technology
Slide 9: Research Laboratory – Tool RPCVD System Lab
Research Laboratory – Tool 3 RPCVD System Lab For personal use only Commercial in Confidence 9
Slide 10: Research Laboratory – Tool RPCVD System with Helicon RF Plasma
Research Laboratory – Tool 3 RPCVD System with Helicon RF Plasma For personal use only Commercial in Confidence 10
Slide 11: Research Laboratory – Process Chamber Heater, N2 Plasma & Gas Ring
Research Laboratory – Process Chamber Heater, N2 Plasma & Gas Ring For personal use only Commercial in Confidence 11
Slide 12: Research Laboratory – He-Cd UV Laser Photoluminescence System
Research Laboratory – He-Cd UV Laser Photoluminescence System For personal use only Commercial in Confidence 12
Slide 13: Process Definition - Remote Plasma Chemical Vapour Deposition
Process Definition - Remote Plasma Chemical Vapour Deposition For personal use only nitrogen • Nitrogen plasma remote from substrate plasma • Low ion damage / high PE excited N species TMGa • Low deposition temperature (< 700ºC) • No ammonia (NH3) • No H2 passivation of p-type Mg doping • Low materi
Slide 14: Oxygen Elimination
Oxygen Elimination For personal use only 100 o GaN sample grown at 630 C GaN sample grown at 650 oC 10 EMCORE sample • BluGlass RPCVD technique TDI sample overcomes oxygen contamination 1 [O] 0.1 • Comparison of oxygen levels in commercial and BluGlass material 0.01 0.001 0 500 1000 1500 2000 2500 D
Slide 15: Substrate – ZnO Buffered Glass / Sapphire
Substrate – ZnO Buffered Glass / Sapphire For personal use only • Joint Development Agreement with St Gobain on specially engineered substrate-RPCVD GaN combinations • Electroluminescent devices now grown at low temperature on three substrate combinations: – Glass 6” / ZnO buffer layer (heterojuncti
Slide 16: Crystal Quality
Crystal Quality For personal use only • Single crystal RPCVD GaN on commercial GaN-on-sapphire template at 650°C • Crystal quality similar to MOCVD grown at above 1,000°C • Pit densities of ~6x106 cm-2 measured from SEM surface scans, comparable to MOCVD values* • “V-defect” typical hexagonal pit de
Slide 17: Crystal Quality
Crystal Quality For personal use only a) N face polycrystalline b) Ga face coalescing film c) Ga face single crystal with inverse hexagonal pit. (high resolution SEM surface images) Commercial in Confidence 17
Slide 18: Crystal Quality - XRD and Pole Figures
Crystal Quality - XRD and Pole Figures [001] c-plane For personal use only (0001) • X-Ray pole figures of the plane - (1-104) l • Six individual peaks indicate good crystal regularity in the a and c planes • “Smeared” peaks indicate poor crystal quality • “Donut” indicates amorphous material () a-pl
Slide 19: Material Performance - Cathodoluminescence
Material Performance - Cathodoluminescence For personal use only Electron beam induced luminescence of p-n junction material RPCVD p-GaN grown on commercial n-GaN-on-sapphire templates (TDI) CL high energy peak indicates quality match RPCVD p-GaN to MOCVD n-GaN LN Cathodoluminescence 30 kV 25 kV 15
Slide 20: Material Performance - Photoluminescence Undoped GaN
Material Performance - Photoluminescence Undoped GaN For personal use only PL Intensity - Band edge of GaN 8 EMCORE ((MOCVD) TDI (MOCVD) GaN grown on Silica / ZnO GaN grown on Sapphire 6 (arb) Commercial GaN layer 2 – 3 µm thick (arb) (PL intensity layer thickness dependent) Intensity 4 Intensity PL
Slide 21: Material Performance - Electrical Properties
Material Performance - Electrical Properties For personal use only Electrical properties of RPCVD GaN grown without conducting buffer layers on sapphire or glass at < 700oC Undoped GaN (on borosilicate glass) Mobility µ = 810 cm2 / V·sec Typical MOCVD quality 800 cm2 / V·sec, TDI spec > 500 cm2 / V·
Slide 22: Large Area Capability - 2” / 4” / 6” and beyond
Large Area Capability - 2” / 4” / 6” and beyond For personal use only Presently using third generation in-house developed RPCVD tool • Current deposition routine on 2” and 4” wafers • ~2% thickness deviation achieved for 4” GaN & InN (reflection / transmission spectroscopy • Uniform GaN deposition &
Slide 23: Device Development – RPCVD p-n Junction LED
Device Development – RPCVD p-n Junction LED For personal use only Light Spectra of a p/n junction 60 50 Intensity (Arb. Units) 40 30 20 10 0 -10 -20 -30 200 300 400 500 600 700 800 900 1000 Wavelength (nm) Commercial in Confidence 23
Slide 24: Device Development – RPCVD Heterojunction LED
Device Development – RPCVD Heterojunction LED For personal use only p contact p-GaN 150 nm p-GaN n contact InGaN, 40 nm DHJ n-GaN, 300 nm n-GaN ZnO, 140 nm Buffer Substrate (glass / sapphire) Schematic not to scale • The first RPCVD InGaN / GaN double heterojunction device on sapphire showed continu
Slide 25: Device Development – RPCVD Heterojunction LED
Device Development – RPCVD Heterojunction LED For personal use only Electroluminescent 350 x 350µ µ test DHJ LED devices Commercial in Confidence 25
Slide 26: Device Development – RPCVD Heterojunction LED
Device Development – RPCVD Heterojunction LED For personal use only *Optoelectronic Properties of Semiconductors & Superlattices, Manashreh, Vol2, p484, Fig 10. Commercial in Confidence 26
Slide 27: Device Development - Laser Scribed Glass Substrate
Device Development - Laser Scribed Glass Substrate For personal use only 400 µm square sections on 0.3 mm thick glass Commercial in Confidence 27
Slide 28: Commercial RPCVD Tool Development
For personal use only Commercial RPCVD Tool Development 28
Slide 29: Equipment Design and Development
Equipment Design and Development For personal use only • Tool 3 : Research Scale RPCVD III-N Deposition Tool – Capacity for 3 x 2 inch / 1 x 4 inch and 1 x 6 inch wafers – Used to develop RPCVD process technology – Sets benchmark for commercial tool development • Tool 4 : Commercial Production Demon
Slide 30: Tool - Commercial Tool Development Schematic
Tool 4 - Commercial Tool Development Schematic For personal use only Process module Gas supply system BluGlass EMF SS (Australia) (Cork, Ireland) Automated handler Brooks Automation Inc. (Boston, US) 30
Slide 31: Process Module Schematic and CFD Based Design
Process Module Schematic and CFD Based Design For personal use only Upper cell • Use of Computational Fluid Dynamics (CFD) – Computer software modeling tool used to “Collar” guide equipment design and development – Accelerates development Lower cell 31
Slide 32: Reaction Chamber Design - Computational Fluid Dynamic Modeling
Reaction Chamber Design - Computational Fluid Dynamic Modeling For personal use only CFD builds a computational model reflecting the system physics Stage 1: construction of a computational mesh. A complex mesh of small volumes generated – Mesh is used to calculate the interaction of different physic
Slide 33: Computational Fluid Dynamics
Computational Fluid Dynamics For personal use only Gas flow distribution [m/s] in Tool 3 deposition chamber v [m/s] 33
Slide 34: Process Module Design
Process Module Design For personal use only Temperature distribution [°°C] for wafer carrier stage T [°°C] 34
Slide 35: Value Proposition
For personal use only 35 Value Proposition
Slide 36: Value Proposition
Value Proposition For personal use only The BluGlass Remote Plasma Chemical Vapour Deposition (RPCVD) GaN manufacturing technology offers: lower cost (substrate, no ammonia, low materials) safer and more environmentally benign processing environmentally beneficial end product (LED’s) 36
Slide 37: Value Proposition
Value Proposition For personal use only Remote Chemical Vapour Deposition Cost reduction benefits over industry standard processing Low growth temperature Low cost substrates Zero use of ammonia Low pre-cursor material consumption Large area deposition Total Cost of Ownership comparative modeling Wr
Slide 38: Business Model
For personal use only 38 Business Model
Slide 39: Ownership Structure
Ownership Structure For personal use only Blend of shareholders – approx 160 million shares Macquarie University Major Corporate Founder Shareholders Small Investors Board / Employees 39
Slide 40: Business Plan
Business Plan For personal use only BluGlass technology and IP GaN materials GaN and deposition manufacturing processes tool technology Specialised Main strategy strategy Manufacture Provide Manufacture Supply tool and Demonstration niche niche tools for license process facility of RPCVD devices & R
Slide 41: Business Plan - Key Aspects
Business Plan - Key Aspects For personal use only RPCVD Tool Development Combine with major tool manufacturer to design, manufacture, sell, distribute and provide after sales service of a specialised BluGlass RPCVD tool. License Epi-Wafer Production Process License manufacturing process including to
Slide 42: Intellectual Property
Intellectual Property For personal use only Strong IP position, reviewed by Blake Dawson Waldron Two patents lodged in National Filing and an additional provisional patent lodged. National Filing Patents: Process for Manufacturing a Gallium Rich Gallium Nitride Film. Method and Apparatus for growing
Slide 43: Thank you
For personal use only 43 Thank you