Micron Technology, Inc. · NASDAQ:MU
Micron Technology — Technical Presentation (October 2026)
33 slides from Micron Technology's technical presentation, Oct 21, 2026
Slide 1: Technology and products leadership for the AI era
Micron Confidential Technology and products leadership for the AI era October 21, 2026 Micron Confidential
Slide 2: Legal disclaimer
Legal disclaimer This presentation contains forward-looking statements regarding our industry, our strategic position, customer demand, investments and the goals for such investments, our business opportunities, our products and technology, including our product and technology roadmaps and expected
Slide 3: Scott DeBoer
Scott DeBoer President and Chief Technology and Products Officer 3
Slide 4: Accelerating intelligence to enrich life for all
Accelerating intelligence to enrich life for all • AI has created unprecedented opportunity for memory and storage; Micron has executed and delivered • Micron’s technology leadership is foundational to delivering differentiated, industry-leading products • AI accelerates Micron team members’ innovat
Slide 5: Each wave of AI increases memory demand
Each wave of AI increases memory demand AI related demand spans every layer of the memory and storage hierarchy Physical AI >10x Agentic AI DRAM in L4+ robotaxi vs. today’s L2+ car Inference & 30x Robots, AI context length vehicles, reasoning growth per year devices 2x Agents call tools, Training me
Slide 6: Architecture evolving for AI workloads
Architecture evolving for AI workloads Micron’s portfolio spans the memory and storage hierarchy for the data center and beyond Standard, custom and vertical HBM Near Autonomous Training and real-time inference at the highest bandwidth Memory vehicles High-capacity and low-power DRAM modules Main Me
Slide 7: Technology enables industry firsts & best-in-class products
Technology enables industry firsts & best-in-class products Jun 2025 Feb 2026 Mar 2026 Aug 2026 Shipped samples of Shipped 9650 data center Sampled 256 GB SOCAMM2: Qualified ASIL-B UFS 4.1: 1γ-based 10.7 Gbps SSD: World’s first Gen6 Industry’s highest-capacity World’s first ASIL-B LPDDR5X SSD in mas
Slide 8: Inference raises the bar for memory technology
Inference raises the bar for memory technology Prompt LLM inference Answer Your question and 1 Prefill 2 Keep 3 Decode Response generated Read the Save calculations Read saved relevant context prompt to reuse calculations per token one token at a time Saved calculations (KV cache) → → First token fr
Slide 9: Memory has never stopped scaling
Memory has never stopped scaling >400x 1γ 22 Micron DRAM nodes 1β 1995 → 2026 more bits per DRAM wafer since 1995 1α At 1γ dimensions: Bits per wafer >1,500 capacitors 1Znm 50 µm across the width of 1Ynm Human a 50 µm hair hair 1Xnm 20nm 25nm 42nm 350nm 210nm 130nm 78nm Source: Micron | GB = gigabyt
Slide 10: Micron's sustained technology leadership
Micron’s sustained technology leadership 2019 2020 2021 2022 2023 2024 2025 2026 DRAM 1z 1α 1β 1γ First to Industry’s Industry’s Industry’s 4 consecutive leadership volume first first first sample nodes production shipment shipment shipment HBM HBM3E HBM3E HBM4 consecutive 8H 12H 12H 3 generations p
Slide 11: The pace of memory innovation
The pace of memory innovation If a Porsche 911 had evolved at the same pace as memory between 1995 and 2026… 1995 2026 270 hp · $60,000 · 23 MPG 2,700,000 hp · $5.00 · 23,000 MPG ≈ the power of 10 aircraft carriers Ratios applied to match each metric. Performance improvement is captured in the horse
Slide 12: HBM4 vs. worldwide internet bandwidth
HBM4 vs. 2026 worldwide ~100 HBM4 stacks match internet worldwide internet bandwidth bandwidth One HBM4 stack 2.8 TB/s Worldwide internet bandwidth ≈ 282 TB/s 1 square = 1 stack (2.8 TB/s) 2026 internet: TeleGeography, total international internet bandwidth, mid-2026 = 2,259 Tb/s ÷ 8 = 282 TB/s. 282
Slide 13: Memory has become the AI bottleneck
Memory shapes AI capacity, performance and cost per token AI workload Compute Memory Storage Context windows, FLOPS, Bandwidth, capacity Capacity and agents and utilization and and thermals cost per token reasoning at scale stall time Memory has become the AI bottleneck Memory capability and archite
Slide 14: Accelerating intelligence to enrich life for all
Accelerating intelligence to enrich life for all • AI has created unprecedented opportunity for memory and storage; Micron has executed and delivered • Micron’s technology leadership is foundational to delivering differentiated, industry leading products • AI accelerates Micron team members’ innovat
Slide 15: Core technology leadership underpins future architectures
Core technology leadership underpins future architectures Memory design features, performance and power are the differentiators DRAM NAND Planar DRAM 3D DRAM Planar NAND 3D NAND 3D NAND z-scaling xyz-scaling The DRAM cell is So, DRAM must Scaled until the Same footprint, Shrinking cells nearing atom
Slide 16: DRAM roadmap: continuous scaling through innovation
DRAM roadmap: continuous scaling through innovation Micron is extending 6F² leadership and developing 3D DRAM; not pursuing 4F² due to increased complexity/cost 1γ In high-volume manufacturing 1δ Yield ramp 1ε Development ζÅ Early development ηÅ Pathfinding 6F² ✓ DRAM EUV introduction U.S. manufactu
Slide 17: 1δ: the world's most advanced DRAM
1δ: the world’s most advanced DRAM Fifth consecutive node of DRAM industry leadership – ramping in the second half of 2027 Industry-leading technology Supports differentiated manufactured in the U.S. HBM5, vHBM, vEIM products • Mid-20s percentage bit density • Advanced TSV technology improvement fro
Slide 18: DRAM CMOS logic roadmap and performance through 2030
DRAM CMOS logic roadmap and performance through 2030 Accelerated CMOS enabling future differentiated product requirements >10x CMOS logic performance 170 150 130 Performance Poly SiON → 2nd Gen 3D CMOS 110 • Foundation of Micron’s 90 AI memory leadership • Multiple nodes of power and 70 >10x perform
Slide 19: Next-generation DRAM for AI
Next-generation DRAM for AI More bandwidth and capacity, with greater power efficiency LP6 for data center and mobile High-reliability DDR6 for server High-capacity RDIMM >35% >2x 1TB Improved power vs. LP5 Bandwidth vs. DDR5 Memory capacity Performance improvements are targets. 1 TB RDIMM is a capa
Slide 20: Building on HBM leadership to drive AI performance
Building on HBM leadership to drive AI performance Each architecture step shortens the memory–compute path to deliver more tokens per watt Standard HBM Custom HBM Vertical HBM (vHBM) Compute Compute Compute Base Die Base Die Industry baseline Co-designed with customers Memory stacked on compute Memo
Slide 21: Advanced packaging innovations enable future HBM
Advanced packaging innovations enable future HBM Next-generation memory-compute architectures leverage novel packaging innovations Interconnect density Stacking technology Thermal innovations vHBM HBM GPU HBM GPU Interposer Interposer Die-die no gap • TSV and µbump scaling • 16H µbump and hybrid sta
Slide 22: Token efficiency scales with bandwidth, energy efficiency, capacity
Token efficiency scales with bandwidth, energy efficiency, capacity Product roadmap expands to custom HBM, vHBM and vEIM vHBM Vertical 3D HBM vHBM and vEIM enablers HBM JEDEC + custom beginning with HBM4E vEIM Vertical edge inference memory Packaging Hybrid bonding vHBM 3 Higher stack density and To
Slide 23: Proven leadership extends with G11 generational leap
Proven leadership extends with G11 generational leap Each generation of NAND technology leadership builds on the last 45 NAND Scale Today G11: the world’s most advanced NAND density • Wafer-on-wafer bonding (Gb/cm2) G9 NAND 40 • >400 layers and industry-leading cell pitch • Volume ramp in 2H 2027 In
Slide 24: Micron AI-class NAND design optimized for AI workloads
Micron AI-class NAND design optimized for AI workloads AI-class NAND architected to accelerate emerging AI workloads and applications FINE-GRAINED ACCESS NEAR-COMPUTE BANDWIDTH High-IOPS AI-class NAND High-bandwidth AI-class NAND High-IOPS SLC NAND designs for GPU-initiated, TSV-stacked NAND with a
Slide 25: Micron future AI-optimized storage solutions
Micron future AI-optimized storage solutions AI-class NAND enables purpose-built storage solutions wherever AI data lives Data Center On-prem Automotive, Automotive, Robotics, and AI and AI PC robotics, Mobile infrastructure mobile and and Wearables wearables Maximize AI throughput Power private, lo
Slide 26: Accelerating intelligence to enrich life for all
Accelerating intelligence to enrich life for all • AI has created unprecedented opportunity for memory and storage; Micron has executed and delivered • Micron’s technology leadership is foundational to delivering differentiated, industry leading products • AI accelerates Micron team members’ innovat
Slide 27: AI makes Micron 2x faster: invention to volume production
AI makes Micron 2x faster: invention to volume production Industry-leading use of AI across development teams; two examples included below Data Center SSD controller Data Center SSD product 2x faster to silicon tape-out with AI >2x faster to silicon ready for customer releases with AI Months to sili
Slide 28: Accelerating intelligence to enrich life for all
Accelerating intelligence to enrich life for all • AI has created unprecedented opportunity for memory and storage; Micron has executed and delivered • Micron’s technology leadership is foundational to delivering differentiated, industry leading products • AI accelerates Micron team members’ innovat
Slide 29: Long-horizon R&D investments
Long-horizon R&D investments Investing in capabilities for long-term leadership and a greater role in shaping the future 3-10 YEARS 5-10 YEARS 10+ YEARS Micron Albany NanoTech + Micron Ventures NY CREATES Research Labs $550M Advanced $10B total capital commitment lithography planned over the next de
Slide 30: Micron and ecosystem leaders create customer advantage
Micron and ecosystem leaders create customer advantage Solving customer challenges through memory and storage innovation, from startups to hyperscalers + + >1.1 EB 1 LPDDR6 in a single rack for data center systems Micron 6600 ION 245TB SSDs Performance • capacity deliver 15.8PB per 2U server power-e
Slide 31: Co-innovation delivers scaled solutions to meet AI demand
Co-innovation delivers scaled solutions to meet AI demand One ecosystem, building leadership solutions together, with memory at the core Co-imagine Co-design Co-develop Co-validate Deliver at scale Micron + Micron + Micron + One connected Micron customers customers ecosystem ecosystem Optimize base
Slide 32: Accelerating intelligence to enrich life for all
Accelerating intelligence to enrich life for all • AI has created unprecedented opportunity for memory and storage; Micron has executed and delivered • Micron’s technology leadership is foundational to delivering differentiated, industry leading products • AI accelerates Micron team members’ innovat
Slide 33: © 2026 Micron Technology, Inc. All rights reserved
© 2026 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including statements regarding product features, avail
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