Press release

Tower Semiconductor Announces a New RF Switch Technology with Breakthrough Performance

For 5G and high-performance RF switch markets with record Figure of Merit performance Enables cutting-edge solutions for 5G and high-performance RF switch

articleTower Semiconductor Ltd.August 3, 20205/company/tower-semiconductor-ltd/news/tower-semiconductor-announces-a-new-rf-switch-technology-with-breakthrough
Tower Semiconductor Announces a New RF Switch Technology with Breakthrough Performance

About this update from Tower Semiconductor Ltd.

[{"type":"text","content":"\n\n \n \n \n \n \n \n \n \n \n \n \n For 5G and high-performance RF switch markets with record Figure of Merit performance\n \n \n \n \n \n \n \n \n\n Enables cutting-edge solutions for 5G and high-performance RF switch markets with record Figure of Merit performance: Ron x Coff less than 10 femtoseconds The new technology will be presented at IMS 2020, with MPWs available in 2021 MIGDAL HAEMEK, Israel, August 03, 2020 –Tower Semiconductor (NASDAQ/TASE: TSEM), the leader in high-value analog semiconductor foundry solutions, today announces a new radio frequency (RF) switch technology with record figure of merit targeting the 5G and high-performance RF switch markets. This new switch technology enables more efficient, novel RF system architectures in applications including mobile, base-station and mmWave communications. Tower Semiconductor is engaged with multiple customers and partners to bring this technology to market for next-generation products. This new switch technology demonstrates a record RF device figure of merit: Ron x Coff The switch is also nonvolatile so consumes no energy when in the on-state or off-state, making it attractive for IoT, and other power and battery sensitive product applications. Finally, Tower has demonstrated the versatility of this patented technology by integrating it with some of its other process platforms such as SiGe BiCMOS and Power CMOS. Tower Semiconductor will be offering multi-project wafer runs (MPWs) in 2021 for select customers. The new RF switch will be presented at IMS 2020 (International Microwave Symposium) with results from electrical devices, process integration and circuits fabricated at Tower Semiconductor. Presentations are part of the Tu1G: Innovative RF Switches and Applications session (Tu1G-2 and Tu1G-5). The Live Stream event will take place Aug. 4 – 6, 2020. For more details about the presentations, please visit IMS 2020 event website here. For more information about Tower Semiconductor’s RF & HPA process technology offerings, please click here. For more information about Tower Semiconductor’s process technology offerings, please click here. About Tower Semiconductor Tower Semiconductor Ltd. (NASDAQ: TSEM, TASE: TSEM), the leader in high-value analog semiconductor foundry solutions, provides technology and manufacturing platforms for integrated circuits (ICs) in growi...

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