Press release
TI introduces industry's first automotive GaN FET with integrated driver, protection and active power management
Engineers can deliver twice the power density and the highest efficiency in their automotive onboard chargers and industrial power supplies DALLAS, Nov. 9,
About this update from Texas Instruments Incorporated
[{"type":"text","content":"Engineers can deliver twice the power density and the highest efficiency in their automotive onboard chargers and industrial power supplies\n\n\nDALLAS, Nov. 9, 2020 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99% efficiency and reduce the size of power magnetics by 59% compared to existing solutions. TI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC). For more information, see www.ti.com/LMG3425R030-pr and www.ti.com/LMG3525R030-Q1-pr.\n\n \n \n \n \n \n \n\n \nVehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance. Using TI's new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions – enabling engineers to achieve extended battery range, increased system reliability and lower design cost. In industrial designs, the new devices enable high efficiency and power density in AC/DC power-delivery applications where low losses and reduced board space are important – such as hyperscale and enterprise computing platforms as well as 5G telecom rectifiers.\n\"Wide-bandgap semiconductor technologies like GaN inherently bring firmly established capabilities to power electronics, especially for high-voltage systems,\" said Asif Anwar, director of the Powertrain, Body, Chassis & Safety Service at Strategy Analytics. \"Texas Instruments leverages over a decade of investment and development to deliver a uniquely holistic approach – combining internal GaN-on-Si device production and packaging with optimized Si driver technology to successfully implement GaN in new applicatio...