Press release
TI expands low-power GaN portfolio, enabling AC/DC power adapters to shrink 50%
• Engineers can develop AC/DC solutions that are half the size and achieve >95% system efficiency, simplifying thermal design. • New GaN devices are
About this update from Texas Instruments Incorporated
[{"type":"text","content":"• Engineers can develop AC/DC solutions that are half the size and achieve >95% system efficiency, simplifying thermal design.\n • New GaN devices are compatible with the most common topologies in AC/DC power conversion.\n\n\nDALLAS, Nov. 30, 2023 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today announced the expansion of its low-power gallium nitride (GaN) portfolio, designed to help improve power density, maximize system efficiency, and shrink the size of AC/DC consumer power electronics and industrial systems. TI's overall portfolio of GaN field-effect transistors (FETs) with integrated gate drivers addresses common thermal design challenges, keeping adapters cooler while pushing more power in a smaller footprint.\n\n \n \n \n \n \n \n\n \nFor more information, see TI.com/LMG3622.\n\"Today's consumers want smaller, lighter and more portable power adapters that also provide fast, energy-efficient charging,\" said Kannan Soundarapandian, general manager of High Voltage Power at TI. \"With the expansion of our portfolio, designers can bring the power-density benefits of low-power GaN technology to more applications that consumers use every day, such as mobile phone and laptop adapters, TV power-supply units, and USB wall outlets. Additionally, TI's portfolio also addresses the growing demand for high efficiency and compact designs in industrial systems such as power tools and server auxiliary power supplies.\"\nThe new portfolio of GaN FETs with integrated gate drivers, which includes the LMG3622, LMG3624 and LMG3626, offers the industry's most accurate integrated current sensing. This functionality helps designers achieve maximum efficiency by eliminating the need for an external shunt resistor and reducing associated power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.\nMaximize energy efficiency and simplify thermal designTI's GaN FETs with integrated gate drivers enable faster switching speeds, which helps keep adapters from overheating. Designers can reach up to 94% system efficiency for 75-W AC/DC applications. The new devices help designers reduce the solution size of a typical 67-W power adapter by as much as 50% compared to silicon-based solutions.\nThe portfolio is also optimized for the most common topologies in AC/DC power conversion, ...