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ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices
Isolated Gate Driver IC Optimized for driving 600V-class high-voltage GaN HEMTs Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current
About this update from Rohm Company Limited
[{"type":"text","content":"Isolated Gate Driver IC","length":23,"tagName":"p"},{"type":"image","alt":"Optimized for driving 600V-class high-voltage GaN HEMTs","displaySize":"","headline":null,"caption":"Optimized for driving 600V-class high-voltage GaN HEMTs","credit":"GlobeNewswire Inc.","className":"","disableSlideshowImg":false,"size":{"original":{"width":1156,"height":1214,"url":"https://media.zenfs.com/en/globenewswire.com/6a5279dd2376427e43cbae1f2dafd979"},"resized":{"url":"https://s.yimg.com/ny/api/res/1.2/zTt1obZsH.QmB85_GLjYIA--/YXBwaWQ9aGlnaGxhbmRlcjt3PTk2MDtoPTEwMDg7Y2Y9d2VicA--/https://media.zenfs.com/en/globenewswire.com/6a5279dd2376427e43cbae1f2dafd979","width":960,"height":1008},"lightbox":{"url":"https://s.yimg.com/ny/api/res/1.2/I8VkgFODI5SF3XY.J_6GKg--/YXBwaWQ9aGlnaGxhbmRlcjt3PTIzMTI7aD0yNDI4O2NmPXdlYnA-/https://media.zenfs.com/en/globenewswire.com/6a5279dd2376427e43cbae1f2dafd979","width":1156,"height":1214}}},{"type":"text","content":"Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies.","length":481,"tagName":"p"},{"type":"text","content":"As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world’s total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently.","length":408,"tagName":"p"},{"type":"text","content":"Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles.","length":386,"tagName":"p"},{"type":"te...