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ROHM Develops Ultra-compact MOSFET Featuring Industry-leading Low ON-resistance, Ideal for Fast Charging Applications
ROHM Co., Ltd. has launched the AW2K21, a 30V N-channel MOSFET in a common-source configuration that delivers an industry-best* ON-resistance of 2.0 milliohms (typ.) in a compact 2.0mm x 2.0mm WLCSP package. This innovation addresses the growing demand for fast charging in compact devices like smartphones and wearables, which require bidirectional protection and high-current handling.
About this update from Rohm Company Limited
[{"type":"text","content":"KYOTO, Japan, Aug. 21, 2025 /PRNewswire/ -- ROHM Co., Ltd. has launched the AW2K21, a 30V N-channel MOSFET in a common-source configuration that delivers an industry-best* ON-resistance of 2.0 milliohms (typ.) in a compact 2.0mm x 2.0mm WLCSP package. This innovation addresses the growing demand for fast charging in compact devices like smartphones and wearables, which require bidirectional protection and high-current handling.","length":441,"tagName":"p"},{"type":"text","content":"*ROHM July 8, 2025 study","length":24,"tagName":"p"},{"type":"text","content":"Figures: Product features: https://cdn.kyodonewsprwire.jp/prwfile/release/M106254/202508073360/_prw_PI1fl_4c6Ms62h.jpg","length":118,"tagName":"p"},{"type":"text","content":"Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in increased board space and complexity. ROHM's AW2K21 overcomes these limitations by integrating two MOSFETs into a single ultra-compact package, enabling bidirectional protection with reduced footprint and power loss.","length":415,"tagName":"p"},{"type":"text","content":"Figures: performance comparison: https://cdn.kyodonewsprwire.jp/prwfile/release/M106254/202508073360/_prw_PI2fl_8rJgqgL5.jpg","length":124,"tagName":"p"},{"type":"text","content":"The proprietary structure enhances cell density and places the drain terminal on the top surface, unlike conventional vertical trench MOSFETs. This allows for a higher chip-to-package area ratio, minimizing ON-resistance per unit area and supporting high-current operation. Compared to standard 3.3mm x 3.3mm MOSFETs, the AW2K21 reduces footprint and ON-resistance by approximately 81% and 33%, respectively. It also outperforms similarly sized GaN HEMTs with up to 50% lower ON-resistance.","length":490,"tagName":"p"},{"type":"text","content":"Ideal for power supply and charging circuits, the AW2K21 also excels in load switch applications as a unidirectional protection MOSFET. ROHM is further advancing miniaturization with a 1.2mm x 1.2mm model currently under development.","length":233,"tagName":"p"},{"type":"text","content":"ROHM continues to drive energy efficiency and miniaturization in electronics, contributing to a more sustainable society through high-...